April 11, 2016 • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice • 202945F
DATA SHEET
●
SKY16602-632LF: LOW-THRESHOLD PIN DIODE LIMITER
Electrical and Mechanical Specifications
The absolute maximum ratings of the SKY16602-632LF are
provided in Table 2. Electrical specifications for the un-tuned
limiter module are provided in Table 3, and typical performance
characteristics are illustrated in Figures 4 and 5. Electrical
specifications for the 2.45 GHz tuned limiter module are
provided in Table 4, and typical performance characteristics are
illustrated in Figures 6 and 7.
Table 2. SKY16602-632LF Absolute Maximum Ratings
1
Parameter
RF input power (CW) at T
CASE
= 85C
RF input power (1
s
pulse, 10% duty cycle) at T
CASE
= 85C
CW power dissipation at T
CASE
= 85C
Storage temperature
Operating temperature
Electrostatic discharge:
Charged-Device Model (CDM), Class 4
Human Body Model (HBM), Class 1B
Machine Model (MM), Class A
at or below their nominal value. Exceeding any of the limits listed here may result in permanent damage to the device.
Figures 8 and 9 show the power derating curves for the limiter.
In Figure 8, the temperature is referenced to the bottom of the
QFN package. The power derating curve with the temperature
referenced to the bottom of the printed circuit board is shown in
Figure 9.
Symbol
P
IN
P
IN
P
DIS
T
STG
T
OP
ESD
Minimum
Maximum
12
120
0.4
Unit
W
W
W
°C
°C
V
V
V
−65
−40
150
85
1000
250
150
1
Exposure to maximum rating conditions for extended periods may reduce device reliability. There is no damage to device with only one parameter set at the limit and all other parameters set
CAUTION:
Although these devices are designed to be as robust as possible, electrostatic discharge (ESD) can damage them. These
devices must be protected at all times from ESD. Static charges may easily produce potentials of several kilovolts on the human
body or equipment, which can discharge without detection. Industry-standard ESD precautions should be employed at all
as Measured in Skyworks Evaluation Board Optimized for Operation at 0.2 to 4.0 GHz, Unless Otherwise Noted)
Parameter
Reverse voltage
Forward current
Insertion loss
Return loss
Threshold level
Saturated CW input power
1
Flat leakage power
2
Recovery time
3
Thermal resistance
Symbol
V
R
I
F
I
L
R
L
T
L
P
IN_CW
F
L
t
R
JC
Junction-to-case
P
IN
= +10 dBm
P
IN
= 0 dBm
P
IN
= 0 dBm
P1dB
0.90 GHz
0.90 GHz
0.90 GHz
0.90 GHz
0.90 GHz
0.90 GHz
5.3
0.3
14
6.0
30
6
5
114
6.7
Condition
Frequency
Min.
Typ.
Max.
20
50
0.5
Units
V
mA
dB
dB
dBm
dBm
dBm
ns
C/W
1
Saturated CW input power is defined as the point where the diode series resistance does not change with the rectified current. As the input power increases past this point, output power will
increase until the diode reaches its max power limit.
2
Flat leakage power is defined as the power level after the limiter has fully turned on and the output pulse reaches a constant level.
3
Recovery time represents the transition time from the high-loss to low-loss state following the removal of high-power input. RF pulse modulation: 1
as Measured in Skyworks Evaluation Board Optimized for Operation at 2.45 GHz, Unless Otherwise Noted)
Parameter
Insertion loss
Return loss
Threshold level
Saturated CW input power
1
Flat leakage power
2
Input third order intercept
Recovery time
3
Thermal resistance
I
L
R
L
T
L
P
IN_CW
F
L
IIP3
t
R
JC
Junction to case
P
IN
= +10 dBm
P
IN
= –10 dBm/tone, spacing = 10 MHz
Symbol
P
IN
= 0 dBm
P
IN
= 0 dBm
P1dB
Condition
Frequency
2.45 GHz
2.45 GHz
2.45 GHz
2.45 GHz
2.45 GHz
2.45 GHz
2.45 GHz
Min.
Typ.
0.5
25
5
23
4
21
5
114
Max.
Units
dB
dB
dBm
dBm
dBm
dBm
ns
C/W
1
Saturated CW input power is defined as the point where the diode series resistance does not change with the rectified current. As the input power increases past this point, output power will
increase until the diode reaches its max power limit.
2
Flat leakage power is defined as the power level after the limiter has fully turned on and the output pulse reaches a constant level.
3
Recovery time represents the transition time from the high-loss to low-loss state following the removal of high-power input. RF pulse modulation: 1
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