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V62/06630-01XE

产品描述Enhanced Product Dual 2-Input Positive-Or Gate 8-VSSOP -40 to 85
产品类别逻辑    逻辑   
文件大小752KB,共12页
制造商OSRAM_Opto_Semiconductors_Inc.
标准
下载文档 详细参数 全文预览

V62/06630-01XE概述

Enhanced Product Dual 2-Input Positive-Or Gate 8-VSSOP -40 to 85

V62/06630-01XE规格参数

参数名称属性值
Brand NameTexas Instruments
是否无铅不含铅
是否Rohs认证符合
厂商名称OSRAM_Opto_Semiconductors_Inc.
零件包装代码SOIC
包装说明SSOP-8
针数8
Reach Compliance Codecompliant
Factory Lead Time6 weeks
Is SamacsysN
系列LVC/LCX/Z
JESD-30 代码R-PDSO-G8
JESD-609代码e4
长度2.3 mm
负载电容(CL)50 pF
逻辑集成电路类型OR GATE
最大I(ol)0.032 A
湿度敏感等级1
功能数量2
输入次数2
端子数量8
最高工作温度85 °C
最低工作温度-40 °C
封装主体材料PLASTIC/EPOXY
封装代码VSSOP
封装等效代码TSSOP8,.12,20
封装形状RECTANGULAR
封装形式SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH
包装方法TR
峰值回流温度(摄氏度)260
电源3.3 V
最大电源电流(ICC)0.01 mA
Prop。Delay @ Nom-Sup5.8 ns
传播延迟(tpd)11 ns
认证状态Not Qualified
施密特触发器NO
座面最大高度0.9 mm
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)1.65 V
标称供电电压 (Vsup)1.8 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式GULL WING
端子节距0.5 mm
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度2 mm
Base Number Matches1

文档预览

下载PDF文档
SN74LVC2G32-EP
DUAL 2-INPUT POSITIVE-OR GATE
www.ti.com
SCES543A – FEBRUARY 2004 – REVISED AUGUST 2006
FEATURES
Controlled Baseline
– One Assembly/Test Site, One Fabrication
Site
Extended Temperature Performance of –55°C
to 125°C
Enhanced Diminishing Manufacturing
Sources (DMS) Support
Enhanced Product-Change Notification
Qualification Pedigree
(1)
Supports 5-V V
CC
Operation
Inputs Accept Voltages to 5.5 V
Max t
pd
of 3.8 ns at 3.3 V
Low Power Consumption, 10-µA Max I
CC
±24-mA
Output Drive at 3.3 V
Typical V
OLP
(Output Ground Bounce)
<0.8 V at V
CC
= 3.3 V, T
A
= 25°C
Component qualification in accordance with JEDEC and
industry standards to ensure reliable operation over an
extended temperature range. This includes, but is not limited
to, Highly Accelerated Stress Test (HAST) or biased 85/85,
temperature cycle, autoclave or unbiased HAST,
electromigration, bond intermetallic life, and mold compound
life. Such qualification testing should not be viewed as
justifying use of this component beyond specified
performance and environmental limits.
(1)
Typical V
OHV
(Output V
OH
Undershoot)
>2 V at V
CC
= 3.3 V, T
A
= 25°C
I
off
Supports Partial Power-Down-Mode
Operation
Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
ESD Protection Exceeds JESD 22
– 2000-V Human-Body Model (A114-A)
– 200-V Machine Model (A115-A)
– 1000-V Charged-Device Model (C101)
DCU PACKAGE
(TOP VIEW)
1A
1B
2Y
GND
1
2
3
4
8
7
6
5
V
CC
1Y
2B
2A
DESCRIPTION/ORDERING INFORMATION
This dual 2-input positive-OR gate is designed for 1.65-V to 5.5-V V
CC
operation.
The SN74LVC2G32 performs the Boolean function
Y
+
A
)
B or Y
+
A
B
in positive logic.
This device is fully specified for partial-power-down applications using I
off
. The I
off
circuitry disables the outputs,
preventing damaging current backflow through the device when it is powered down.
ORDERING INFORMATION
T
A
–55°C to 125°C
(1)
(2)
SSOP – DCU
PACKAGE
(1)
Reel of 3000
ORDERABLE PART NUMBER
SN74LVC2G32MDCUREP
TOP-SIDE MARKING
(2)
BUE
Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at
www.ti.com/sc/package.
DCU: The actual top-side marking has three additional characters that designate the year, month, and assembly/test site.
FUNCTION TABLE
(EACH GATE)
INPUTS
A
H
X
L
B
X
H
L
OUTPUT
Y
H
H
L
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2004–2006, Texas Instruments Incorporated
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