D ts e t
aa h e
R c e t r lc r nc
o h se Ee to is
Ma u a t r dCo o e t
n fc u e
mp n n s
R c e tr b a d d c mp n ns ae
o h se rn e
o oet r
ma ua trd u ig ete dewaes
n fcue sn i r i/ fr
h
p rh s d f m te oiia s p l r
uc a e r
o h r n l u pi s
g
e
o R c e tr waes rce td f m
r o h se
fr e rae r
o
te oiia I. Al rce t n ae
h
r nl P
g
l e rai s r
o
d n wi tea p o a o teOC
o e t h p rv l f h
h
M.
P r aetse u igoiia fcoy
at r e td sn r n la tr
s
g
ts p o rmso R c e tr e eo e
e t rga
r o h se d v lp d
ts s lt n t g aa te p o u t
e t oui s o u rne
o
rd c
me t o e c e teOC d t s e t
es r x e d h
M aa h e.
Qu l yOv riw
ai
t
e ve
• IO- 0 1
S 90
•A 92 cr ct n
S 1 0 et ai
i
o
• Qu l e Ma ua trr Ls (
ai d
n fcues it QML MI- R -
) LP F
385
53
•C a sQ Mitr
ls
lay
i
•C a sVS a eL v l
ls
p c ee
• Qu l e S p l r Ls o D sr uos( L )
ai d u pi s it f it b tr QS D
e
i
•R c e trsacic l u pir oD A a d
o h se i
r ia s p l t L n
t
e
me t aln u t a dD A sa d r s
es lid sr n L tn ad .
y
R c e tr lcrnc , L i c mmi e t
o h se Ee t is L C s o
o
tdo
t
s p ligp o u t ta s t f c so r x e t-
u pyn rd cs h t ai y u tme e p ca
s
t n fr u lya daee u loto eoiial
i s o q ai n r q a t h s r n l
o
t
g
y
s p l db id sr ma ua trr.
u pi
e yn ut
y n fcues
T eoiia ma ua trr d ts e t c o a yn ti d c me t e e t tep r r n e
h r n l n fcue’ aa h e a c mp n ig hs o u n r cs h ef ma c
g
s
o
a ds e ic t n o teR c e tr n fcue v rino ti d vc . o h se Ee t n
n p c ai s f h o h se ma ua trd eso f hs e ie R c e tr lcr -
o
o
isg aa te tep r r n eo i s mio d co p o u t t teoiia OE s e ic -
c u rne s h ef ma c ft e c n u tr rd cs o h r n l M p c a
o
s
g
t n .T pc lv le aefr eee c p r o e o l. eti mii m o ma i m rt g
i s ‘y ia’ au s r o rfrn e up s s ny C r n nmu
o
a
r xmu ai s
n
ma b b s do p o u t h rceiain d sg , i lt n o s mpetsig
y e a e n rd c c aa tr t , e in smuai , r a l e t .
z o
o
n
© 2 1 R cetr l t n s LC Al i t R sre 0 1 2 1
0 3 ohs E cr i , L . lRg s eevd 7 1 0 3
e e oc
h
T l r m r, l s v iw wrcl . m
o e n oe p ae it w . e c o
a
e
s
o ec
BAT64...B5000 / B5003
Silicon Schottky Diodes
•
For low-loss, fast-recovery, meter protection,
bias isolation and clamping application
•
Integrated diffused guard ring
•
Low forward voltage
•
Improved operating temperature range
due to extra-low thermal resistance
(see attached Forward current curves)
•
High volume packing size:
B5000: 9 x 10k reels, B5003: 10 x 3k reels
•
Not for automotive applications*
BAT64
3
BAT64-04
3
BAT64-05
3
BAT64-06
3
D 1
D 2
D 1
D 2
D 1
D 2
1
2
1
2
1
2
1
2
Type
BAT64
BAT64-04
BAT64-05
BAT64-06
Package
SOT23
SOT23
SOT23
SOT23
Configuration
single
series
common cathode
common anode
L
S
(nH)
1.8
1.8
1.8
1.8
Marking
63s
64s
65s
66s
* Automotive qualification ongoing
1
2006-08-04
BAT64...B5000 / B5003
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Parameter
Diode reverse voltage
Forward current
Non-repetitive peak surge forward current
(t
≤
10ms)
Average rectified forward current (50/60Hz, sinus)
I
FAV
Total power dissipation
BAT64 , T
s
≤ 122°C
BAT64-04, BAT64-06, T
s
≤ 115°C
BAT64-05, T
s
≤ 109°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1)
BAT64
BAT64-04, BAT64-06
BAT64-05
Symbol
R
thJS
≤
110
≤ 140
≤ 165
Symbol
V
R
I
F
I
FSM
Value
40
250
800
120
Unit
V
mA
P
tot
250
250
250
T
j
T
stg
150
-55 ... 150
mW
°C
Value
Unit
K/W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
DC Characteristics
Breakdown voltage
I
(BR)
= 10 µA
Reverse current
V
R
= 30 V
V
R
= 30 V,
T
A
= 85 °C
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 30 mA
I
F
= 100 mA
1
For
Unit
max.
-
-
2
200
-
350
430
520
750
mV
V
µA
typ.
-
-
-
-
-
320
385
440
570
V
(BR)
I
R
40
-
-
-
V
F
-
270
310
370
500
calculation of
R
thJA
please refer to Application Note Thermal Resistance
2
2006-08-04