Datasheet> 器件分类 > 分立半导体> 二极管> JANTX1N6632US

JANTX1N6632US: 产品描述Zener Diode, 3.3V V(Z), 5%, 5W, Silicon, Unidirectional, HERMETIC SEALED, GLASS PACKAGE-2; 产品类别分立半导体二极管; 文件大小59KB，共2页; 制造商Compensated Devices Inc

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JANTX1N6632US概述

Zener Diode, 3.3V V(Z), 5%, 5W, Silicon, Unidirectional, HERMETIC SEALED, GLASS PACKAGE-2

JANTX1N6632US规格参数

参数名称	属性值
厂商名称	Compensated Devices Inc
包装说明	O-LELF-R2
Reach Compliance Code	unknown
Is Samacsys	N
其他特性	METALLURGICALLY BONDED
外壳连接	ISOLATED
配置	SINGLE
二极管元件材料	SILICON
二极管类型	ZENER DIODE
JESD-30 代码	O-LELF-R2
元件数量	1
端子数量	2
封装主体材料	GLASS
封装形状	ROUND
封装形式	LONG FORM
极性	UNIDIRECTIONAL
最大功率耗散	5 W
认证状态	Not Qualified
参考标准	MIL-19500/356H
标称参考电压	3.3 V
表面贴装	YES
技术	ZENER
端子形式	WRAP AROUND
端子位置	END
最大电压容差	5%
工作测试电流	380 mA
Base Number Matches	1

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• AVAILABLE IN

JAN, JANTX, JANTXV,

AND

JANS

PER MIL-PRF-19500/356

• 5 WATT ZENER DIODES

• NON CAVITY CONSTRUCTION

• METALLURGICALLY BONDED

1N6632US

THRU

1N6637US

AND

1N5968US

AND

1N5969US

MAXIMUM RATINGS

Operating Temperature: -65°C to +175°C

Storage Temperature: -65°C to +175°C

Power Dissapation: 5W @ TEC=+125°C

Power Derating: 100mW/°C above TEC=+125°C

Forward Voltage: 1.5 V dc @ IF=1A dc

ELECTRICAL CHARACTERISTICS

@ 25°C, unless otherwise specified

NOMINAL

TEST

ZENER CURRENT

VOLTAGE

IZT

VZ@IZT

±5%

VOLTS

1N6632US

1N6633US

1N6634US

1N6635US

1N6636US

1N6637US

1N5968US

1N5969US

3.3

3.6

3.9

4.3

4.7

5.1

5.6

6.2

380

350

320

290

260

240

220

OHMS

3.0

2.5

2.0

1.5

1.0

OHMS

500

450

400

1000

VOLTS

0.90

0.80

0.75

0.70

0.60

0.50

0.4

0.5

MAXIMUM ZENER IMPEDANCE

TYPE

ZZ@IZT

ZZK(1)

IZK=5mA

MAXIMUM REVERSE

LEAKAGE CURRENT

VOLTAGE

DIM

SURGE

CURRENT

IZSM

AMPS

20.0

18.7

17.6

16.4

15.3

14.4

MILLIMETERS

MIN

MAX

3.48

3.76

0.48

0.71

5.08

5.72

0.03MIN.

INCHES

MIN MAX

.137 .148

0.019 0.028

.200 .225

.001MIN.

REGULATION

VOLTS

1.0

4.28

4.74

FIGURE 1

300

250

175

5000

1000

DESIGN DATA

CASE:

D-5B, Hermetically sealed glass

case, PER MIL-PRF 19500/356

LEAD FINISH:

Tin / Lead

NOTE 1

IZK=1.0 mA for 1N5969

THERMAL RESISTANCE: (R

OJEC):

10 ˚C/W maximum at L = 0

THERMAL IMPEDANCE: (Z

OJX): 3

˚C/W maximum

POLARITY:

Diode to be operated with

the banded (cathode) end positive.

MOUNTING SURFACE SELECTION:

The Axial Coefficient of Expansion

(COE) of this device is approximately

+ 4PPM / °C. The COE of the Mounting

Surface System should be selected to

provide a suitable match with this

device.

22 COREY STREET, MELROSE, MASSACHUSETTS 02176

PHONE (781) 665-1071

FAX (781) 665-7379

WEBSITE: http://www.cdi-diodes.com

E-mail: mail@cdi-diodes.com

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