电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

GBPC3510W

产品描述暂无描述
产品类别分立半导体    普通整流桥   
文件大小1002KB,共3页
制造商LGE
官网地址http://www.luguang.cn/web_en/index.html
下载文档 详细参数 全文预览

GBPC3510W在线购买

供应商 器件名称 价格 最低购买 库存  
GBPC3510W - - 点击查看 点击购买

GBPC3510W概述

暂无描述

GBPC3510W规格参数

参数名称属性值
PackageGBPC-W
Maximum recurrent peak reverse voltage1000
Maximum average forward rectified current17.5
Peak forward surge current400
Maximum instantaneous forward voltage1.1
Maximum reverse current10
TJ(℃)-55~+150

文档预览

下载PDF文档
GBPC35005-GBPC3510
High Current
35AMP.Single
Phase
Glass Passivated Bridge Rectifiers
Features
The plastic material used carries Underwriters
Laboratory Flammability Recognition 94V-0
Integrally molded heatsink provide very low
thermal resistance for maximum heat
dissipation
Surge overload ratings from
400
amperes to
400 amperes
Typical I
R
less than 0.2 uA
High temperature soldering guaranteed:
260
o
C / 10 seconds / .375”, (9.5mm) lead
lengths(For wire type)
Isolated voltage from case to lead over 2500
volts
Rating at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Maximum Ratings and Electrical Characteristics
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
@T
C
= 55
o
C
Peak Forward Surge Current, Single Sine-
wave Superimposed on Rated Load
(JEDEC method )
Symbol
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
I²t
GBPC GBPC GBPC GBPC GBPC GBPC GBPC
35005 3501 3502 3504 3506 3508 3510
Units
V
V
V
A
A
A²S
50
35
50
100
70
100
200
140
200
400
280
400
35.0
400
664
600
420
600
800
560
800
1000
700
1000
I²t Rating for fusing @Tj=25℃
Maximum Instantaneous
Forward Voltage Drop Per
Element at Specified Current
Maximum DC Reverse Current
at Rated DC Blocking Voltage Per Element
Typical Thermal Resistance (Note 1)
Operating and Storage Temperature Range
GBPC15 7.5A
V
F
I
R
R
θJC
T
J
,T
STG
1.1
5
V
uA
o
3.0
-50 to +150
C/W
o
C
Notes: 1. Thermal Resistance from Junction to Case.
2. Suffix “W” - Wire Lead Structure/”M” - Terminal Location Face to Face.
Revision:20170701-P1
ht
t
p
:
//
www.lgesem i
.c
o
m
mail:lge@lgesemi.com

技术资料推荐更多

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 519  583  1995  1396  2244  11  12  41  29  46 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved