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FR307GR0G

产品描述Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-201AD,
产品类别分立半导体    二极管   
文件大小416KB,共4页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
标准
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FR307GR0G概述

Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-201AD,

FR307GR0G规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Taiwan Semiconductor
包装说明O-PALF-W2
Reach Compliance Codenot_compliant
ECCN代码EAR99
Is SamacsysN
其他特性HIGH RELIABILITY, LOW POWER LOSS
应用EFFICIENCY
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)1.3 V
JEDEC-95代码DO-201AD
JESD-30 代码O-PALF-W2
JESD-609代码e3
最大非重复峰值正向电流125 A
元件数量1
相数1
端子数量2
最高工作温度150 °C
最低工作温度-55 °C
最大输出电流3 A
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
最大重复峰值反向电压1000 V
最大反向电流5 µA
最大反向恢复时间0.5 µs
表面贴装NO
端子面层Tin (Sn)
端子形式WIRE
端子位置AXIAL
Base Number Matches1

文档预览

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CREAT BY ART
FR301G - FR307G
3.0AMPS Glass Passivated Fast Recovery Rectifiers
DO-201AD
Features
Glass passivated chip junction
High efficiency, Low VF
High current capability
High reliability
High surge current capability
Low power loss
Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
Cases: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Lead: Pure tin plated, lead free, solderable per
MIL-STD-202, Method 208 guaranteed
Polarity: Color band denotes cathode end
High temperature soldering guaranteed: 260℃/10s
Weight: 1.2 grams
Ordering Information (example)
Part No.
FR301G
Package
DO-201AD
Packing
500 / AMMO box
INNER
TAPE
52mm
Packing code
A0
Packing code
(Green)
A0G
Maximum Ratings and Electrical Characteristics
Rating at 25
ambient temperature unless otherwise specified.
Parameter
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method)
Maximum Instantaneous Forward Voltage (Note 1)
@3A
Maximum DC Reverse Current at
Rated DC Blocking Voltage
@ T
A
=25
@ T
A
=125
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θJA
T
J
T
STG
FR
301G
50
35
50
FR
302G
100
70
100
FR
303G
200
140
200
FR
304G
400
280
400
3
125
1.3
5
100
FR
305G
600
420
600
FR
306G
800
560
800
FR
307G
1000
700
1000
Units
V
V
V
A
A
V
uA
uA
Maximum Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle
150
30
35
250
500
O
nS
pF
C/W
O
O
- 55 to + 150
- 55 to + 150
C
C
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Version:E13

 
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