CET3904E NPN
CET3906E PNP
ENHANCED SPECIFICATION
COMPLEMENTARY PICOmini
TM
SILICON TRANSISTORS
Central
TM
Semiconductor Corp.
DESCRIPTION:
The Central Semiconductor CET3904E / CET3906E
Low VCE(SAT) NPN and PNP Transistors,
respectively, are designed for applications where ultra
small size and power dissipation are the prime
requirements. Packaged in a Tiny Leadless Package
TLP™, these components provide performance
characteristics suitable for the most demanding size
constrained applications.
Top View
Bottom View
SOT-883L CASE
FEATURES:
• Device is
Halogen Free
by design
• Power Dissipation 250mW
APPLICATIONS:
• Low VCE(SAT) 0.1V Typ @ 50mA
• DC / DC Converters
• Small, TLP™ 1x0.4mm, SOT-883L Leadless, • Battery powered devices including
Low Profile, Surface Mount Package
Cell Phones and Digital Cameras
MARKING CODES: CET3904E: C
CET3906E: D
♦
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
TJ, Tstg
Θ
JA
Θ
JA
60
40
6.0
200
250
430
-65 to +150
500
290
UNITS
V
V
V
mA
mW
mW
°C
°C/W
°C/W
♦
Emitter-Base Voltage
Collector Current
Power Dissipation (Note 1)
Power Dissipation (Note 2)
Operating and Storage Junction Temperature
Thermal Resistance (Note 1)
Thermal Resistance (Note 2)
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
NPN
SYMBOL
ICEV
BVCBO
BVCEO
BVEBO
VCE(SAT)
TEST CONDITIONS
VCE=30V, VEB=3.0V
IC=10μA
IC=1.0mA
IE=10μA
IC=10mA, IB=1.0mA
MIN
60
40
6.0
TYP
115
60
7.5
0.057
PNP
TYP
90
55
7.9
0.050
♦
♦
♦
♦
MAX
50
UNITS
nA
V
V
V
V
0.100
Enhanced specification
Notes: (1) FR-4 epoxy PC board, standard mounting conditions
(2) FR-4 epoxy PC board with collector mounting pad area of 1 cm
2
R1 (5-MAY 2008)
Central
♦
♦
♦
♦
SYMBOL
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
hFE
fT
Cob
Cib
hie
hre
hfe
hoe
NF
td
tr
ts
tf
TEST CONDITIONS
IC=50mA, IB=5.0mA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
TM
CET3904E NPN
CET3906E PNP
ENHANCED SPECIFICATION
COMPLEMENTARY PICOmini
TM
SILICON TRANSISTORS
NPN
TYP
0.100
0.75
0.85
240
235
215
110
50
PNP
TYP
0.100
0.75
0.85
130
150
150
120
55
Semiconductor Corp.
ELECTRICAL CHARACTERISTICS
- Continued:
MIN
0.65
MAX
0.200
0.85
0.95
UNITS
V
V
V
VCE=1.0V, IC=0.1mA
90
VCE=1.0V, IC=1.0mA
100
VCE=1.0V, IC=10mA
100
VCE=1.0V, IC=50mA
70
VCE=1.0V, IC=100mA
30
VCE=20V, IC=10mA, f=100MHz
300
VCB=5.0V, IE=0, f=1.0MHz
VBE=0.5V, IC=0, f=1.0MHz
VCE=10V, IC=1.0mA, f=1.0kHz
1.0
VCE=10V, IC=1.0mA, f=1.0kHz
0.1
VCE=10V, IC=1.0mA, f=1.0kHz
100
VCE=10V, IC=1.0mA, f=1.0kHz
1.0
VCE=5.0V, IC=100μA, RS =1.0KΩ,
f=10Hz to 15.7kHz
VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA
VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA
VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
300
4.0
8.0
12
10
400
60
4.0
35
35
200
50
MHz
pF
pF
kΩ
X10-4
μS
dB
ns
ns
ns
ns
♦
Enhanced specification
SOT-883L - MECHANICAL OUTLINE
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
R1 (5-MAY 2008)
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