2SK1838(L), 2SK1838(S)
Silicon N-Channel MOS FET
ADE-208-1327 (Z)
1st. Edition
Mar. 2001
Application
High speed power switching
Features
•
Low on-resistance
•
High speed switching
•
Low drive current
•
No secondary breakdown
•
Suitable for switchingregulator, DC-DC converter
Outline
DPAK-1
4
4
1
1
D
G
1. Gate
2. Drain
3. Source
4. Drain
S
2
3
2 3
2SK1838(L), 2SK1838(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes 1. PW
≤
10
µs,
duty cycle
≤
1 %
2. Value at Tc = 25
°C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
*
1
I
DR
Pch*
2
Tch
Tstg
Ratings
250
±30
1
2
1
10
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Symbol Min
V
(BR)DSS
V
(BR)GSS
I
GSS
250
±30
—
—
2.0
0.3
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.5
5.5
60
30
5
5
6
10
4.5
0.96
160
Max
—
—
±10
100
3.0
—
8.0
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
S
Ω
pF
pF
pF
ns
ns
ns
ns
V
ns
I
F
= 1 A, V
GS
= 0
I
F
= 7 A, V
GS
= 0,
di
F
/dt = 100 A/µs
V
GS
= 10 V, I
D
= 0.5 A,
R
L
= 60
Ω
Test conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
GS
=
±25
V, V
DS
= 0
V
DS
= 200 V, V
GS
= 0
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 0.5 A *
1
I
D
= 0.5 A, V
GS
= 10 V *
1
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note
1. Pulse test
V
GS(off)
|y
fs
|
R
DS(on)
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
2
2SK1838(L), 2SK1838(S)
Power vs. Temperature Derating
20
Maximum Safe Operation Area
10
Pch (W)
3
10
15
Drain Current I
D
(A)
1
DC
O
PW
pe
ra
=
1
10
0
µ
s
s
µ
Channel Dissipation
10
m
s
tio
m
10
0.3
0.1
Operation in this area
is limited by R
DS
(on)
n
s
(T
c
(1
25
=
sh
°C
ot
)
)
5
0.03
Ta = 25°C
0
50
100
Case Temperature
150
Tc (°C)
200
0.01
1
3
10
30
100
300
1000
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
1.0
8V
10 V
0.8
Pulse Test
Drain Current I
D
(A)
Drain Current I
D
(A)
0.6
4.5 V
0.4
4V
0.2
V
GS
= 3.5 V
0
2
4
6
8
10
0
0.6
5V
6V
0.8
1.0
Typical Transfer Characteristics
Pulse Test
V
DS
= 10 V
0.4
0.2
Tc = 75°C
25°C
– 25°C
2
4
6
8
10
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
3
2SK1838(L), 2SK1838(S)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
5
Pulse Test
Static Drain–Source on State
Resistance R
DS
(on) (
Ω
)
4
50
Pulse Test
V
GS
= 10 V
Static Drain to Source on State
Resistance vs. Drain Current
Drain to Source Saturation Voltage
V
DS
(on) (V)
20
10
5
3
0.5 A
2
0.2 A
1
I
D
= 0.1 A
2
1
0
4
8
12
16
20
0.5
0.02
0.05
0.1
0.2
0.5
1
2
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Static Drain to Source on State
Resistance vs. Temperaure
25
5
Forward Transfer Admittance
vs. Drain Current
Static Drain–Source on State
Resistance R
DS
(on) (
Ω
)
Forward Transfer Admittance
|y
fs
| (S)
20
Pulse Test
V
GS
= 10 V
Pulse Test
V
DS
= 10 V
2
1
Tc = – 25°C
0.5
25°C
75°C
0.2
0.1
0.05
0.02
15
I
D
= 0.5 A
10
0.1 A
5
0.2 A
0
– 40
0
40
80
120
160
0.05
0.1
0.2
0.5
1
2
Case Temperature Tc (°C)
Drain Current I
D
(A)
4
2SK1838(L), 2SK1838(S)
Body to Drain Diode Reverse
Recovery Time
1000
500
1000
V
GS
= 0
f = 1 MHz
Typical Capacitance
vs. Drain to Sorce Voltage
Reverse Recovery Time trr (ns)
Capacitance C (pF)
200
100
50
di / dt = 100 A /
µ
s
V
GS
= 0, Ta = 25°C
20
10
0.05
100
Ciss
Coss
10
Crss
1
0
0.1
0.2
0.5
1
2
5
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Sourve Voltage V
DS
(V)
Dynamic Input Characteristics
500
I
D
= 0.5 A
16
V
GS
300
V
DD
= 200 V
200
V
DS
100 V
50 V
8
12
Gate to Source Voltage V
GS
(V)
400
20
100
50
Switching Characteristics
.
V
GS
= 10 V,V
DD
=
30 V
.
PW = 2
µ
s, duty 1 %
Drain to Source Voltage V
DS
(V)
Switching Time t (ns)
tf
20
10
td (on)
5
tr
2
td (off)
100
V
DD
= 200 V
100 V
50 V
4
0
4
8
12
16
20
0
1
0.05
0.1
0.2
0.5
1
2
5
Gate Charge
Q
g (nc)
Drain Current I
D
(A)
5
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