2SJ550(L),2SJ550(S)
Silicon P Channel MOS FET
High Speed Power Switching
ADE-208-633A (Z)
2nd. Edition
Jun 1998
Features
•
Low on-resistance
R
DS(on)
= 0.075Ω typ.
•
Low drive current.
•
4V gate drive devices.
•
High speed switching.
Outline
LDPAK
4
4
D
1
1
2
3
G
2
3
1. Gate
2. Drain
3. Source
4. Drain
S
2SJ550(L),2SJ550(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
I
AP Note3
E
AR Note3
Pch
Note2
Tch
Tstg
Ratings
–60
±20
–15
–60
–15
–15
19
50
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Body-drain diode reverse drain current I
DR
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Note:
1. PW
≤
10µs, duty cycle
≤
1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg
≥
50
Ω
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
–60
±20
—
—
–1.0
—
—
6.5
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.075
0.105
11
850
420
110
12
75
125
75
–1.1
70
Max
—
—
–10
±10
–2.0
0.095
0.155
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
I
F
= –15A, V
GS
= 0
I
F
= –15A, V
GS
= 0
diF/ dt =50A/µs
Test Conditions
I
D
= –10mA, V
GS
= 0
I
G
=
±100µA,
V
DS
= 0
V
DS
= –60 V, V
GS
= 0
V
GS
=
±16V,
V
DS
= 0
I
D
= –1mA, V
DS
= –10V
I
D
= –8A, V
GS
= –10V
Note4
I
D
= –8A, V
GS
= –4V
Note4
I
D
= –8A, V
DS
= –10V
Note4
V
DS
= –10V
V
GS
= 0
f = 1MHz
V
GS
= –10V, I
D
= –8A
R
L
= 3.75Ω
Drain to source breakdown voltage V
(BR)DSS
Gate to source breakdown voltage V
(BR)GSS
Zero gate voltege drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
I
DSS
I
GSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Body–drain diode forward voltage V
DF
Body–drain diode reverse
recovery time
Note:
4. Pulse test
t
rr
2
2SJ550(L),2SJ550(S)
Main Characteristics
Power vs. Temperature Derating
80
1000
Maximum Safe Operation Area
300
100
30
10
3
1
0.3
10 µs
10
0µ
PW
1
s
=
DC
10
ms
Op
m
er
s(
at
1s
ion
ho
(T
t)
c=
Operation in
25
this area is
°C
)
limited by R
DS(on)
Pch (W)
60
Channel Dissipation
40
20
Drain Current
50
100
150
Tc (°C)
200
Case Temperature
Typical Output Characteristics
–10 V –6 V
–4 V
I
D
(A)
0
Ta = 25 °C
0.1
3
30
0.1 0.3
1
10
100
Drain to Source Voltage V
DS
(V)
–20
–20
Pulse Test
–3.5 V
Typical Transfer Characteristics
V
DS
= –10 V
Pulse Test
I
D
(A)
–12
I
D
Drain Current
(A)
–16
–16
–12
Drain Current
–8
–3 V
–4
V
GS
= –2.5 V
0
–2
–4
–6
–8
V
DS
(V)
–10
–8
Tc = 75°C
–4
25°C
–25°C
–1
–2
–3
–4
V
GS
(V)
–5
0
Drain to Source Voltage
Gate to Source Voltage
3
2SJ550(L),2SJ550(S)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
10
Pulse Test
3
1
0.3
0.1
V
GS
= –4 V
–10 V
Drain to Source Saturation Voltage
V
DS(on)
(V)
Pulse Test
–3.2
–2.4
–1.6
I
D
= –15 A
–0.8
–10 A
–5 A
–12
–4
–8
Gate to Source Voltage
–16
–20
V
GS
(V)
0
Drain to Source On State Resistance
R
DS(on)
(
Ω
)
–4.0
0.03
0.01
–0.1 –0.3
–1
–3
–10 –30
Drain Current I
D
(A)
–100
Static Drain to Source on State Resistance
R
DS(on)
(
Ω
)
Forward Transfer Admittance |y
fs
| (S)
Static Drain to Source on State Resistance
vs. Temperature
0.40
Pulse Test
0.32
100
30
10
3
1
0.3
Forward Transfer Admittance vs.
Drain Current
V
DS
= –10 V
Pulse Test
Tc = –25 °C
0.24
I
D
= –15 A –10 A –5 A
V
GS
= –4 V
–5, –10, –15 A
–10 V
25 °C
75 °C
0.16
0.08
0
–40
0
40
80
Tc
120
(°C)
160
0.1
–0.1 –0.3
–1
–3
–10
–30
–100
Case Temperature
Drain Current I
D
(A)
4
2SJ550(L),2SJ550(S)
Body–Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
f = 1 MHz
Ciss
500
Reverse Recovery Time trr (ns)
10000
3000
1000
300
100
100
50
Capacitance C (pF)
200
Coss
20
10
5
–0.1
di / dt = 50 A / µs
V
GS
= 0, Ta = 25 °C
–0.3
–1
–3
–10 –20
Reverse Drain Current I
DR
(A)
Crss
30
10
0
–10
–20
–30
–40
–50
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
0
V
DS
(V)
0
V
GS
(V)
1000
Switching Characteristics
Switching Time t (ns)
–20
V
DD
= –10 V
–25 V
–50 V
–4
V
GS
= –10 V, V
DD
= –30 V
500 PW = 5 µs, duty < 1 %
200
100
50
tr
20
t d(on)
10
–0.1 –0.2 –0.5 –1
–2
–5 –10 –20
I
D
(A)
Drain to Source Voltage
–40
V
DS
V
DD
= –50 V
–25 V
–10 V
I
D
= –15 A
8
16
V
GS
–8
Gate to Source Voltage
t d(off)
tf
–60
–12
–80
–100
0
–16
–20
40
24
32
Gate Charge
Qg (nc)
Drain Current
5
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