Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB942 2SB942A
DESCRIPTION
・With
TO-220Fa package
・High
forward current transfer ratio
h
FE
which has satisfactory linearity
・Low
collector saturation voltage
・Complement
to type
2SD1267/1267A
APPLICATIONS
・For
low-frequency power amplification
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
PARAMETER
固电
IN
导½
半
V
CBO
Collector-base voltage
V
CEO
Collector-emitter voltage
ANG
CH
2SB942
2SB942A
2SB942
MIC
E SE
Open emitter
Open base
Open collector
CONDITIONS
OR
UCT
ND
O
VALUE
-60
-80
-60
-80
-5
-4
-8
UNIT
V
V
2SB942A
V
EBO
I
C
I
CM
Emitter-base voltage
Collector current
Collector current-peak
V
A
A
T
a
=25℃
P
C
Collector power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
2
W
40
150
-55~150
℃
℃
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2SB942
I
C
=-30mA ,I
B
=0
2SB942A
I
C
=-4A, I
B
=-0.4A
I
C
=-3A ; V
CE
=-4V
V
EB
=-5V; I
C
=0
2SB942
2SB942A
2SB942
2SB942A
V
CE
=-30V; I
B
=0
CONDITIONS
2SB942 2SB942A
MIN
-60
TYP.
MAX
UNIT
V
CEO
Collector-emitter
voltage
V
-80
-1.5
-2
-1
V
V
mA
V
CEsat
V
BE
I
EBO
Collector-emitter saturation voltage
Base-emitter voltage
Emitter cut-off current
I
CEO
Collector
cut-off current
-0.7
V
CE
=-60V; I
B
=0
V
CE
=-60V; V
BE
=0
-0.4
V
CE
=-80V; V
BE
=0
I
C
=-1A ; V
CE
=-4V
I
C
=-3A ; V
CE
=-4V
mA
I
CES
Collector
cut-off current
mA
h
FE-1
h
FE-2
f
T
固电
DC current gain
DC current gain
导½
半
Transition frequency
Switching times
t
on
t
stg
t
f
Turn-on time
Storage time
Fall time
HA
INC
ES
NG
I
C
=-0.1A; V
CE
=-10V,f=10MHz
MIC
E
OR
UCT
ND
O
70
250
15
30
0.2
0.5
0.2
MHz
μs
μs
μs
I
C
=-4A
I
B1
=-0.4A ,I
B2
=0.4A
h
FE-1
Classifications
Q
70-150
P
120-250
2
单片机
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