RH1014M
Quad Precision
Operational Amplifier
DESCRIPTIO
ABSOLUTE
AXI U
RATI GS
The RH1014M is the first precision quad operational
amplifier which directly upgrades designs in the industry
standard 8-pin DIP LM124/LM148/OP-11/5156 pin con-
figuration. Low offset voltage (300µV max), low drift
( 2.5µV/°C), low offset current ( 1.5nA), and high gain
(1.2 million min) combine to make the RH1014M four truly
precision amplifers in one package.
The wafer lots are processed to Linear Technology’s in-
house Class S flow to yield circuits usable in stringent
military applications.
Supply Voltage ..................................................... ± 22V
Differential Input Voltage ...................................... ±30V
Input Voltage .............. Equal to Positive Supply Voltage
................................. 5V Below Negative Supply Voltage
Output Short-Circuit Duration ......................... Indefinite
Operating Temperature Range .............. – 55°C to 125°C
Storage Temperature Range ................. – 65°C to 150°C
Lead Temperature (Soldering, 10 sec).................. 300°C
, LTC and LT are registered trademarks of Linear Technology Corporation.
BUR -I CIRCUIT
PACKAGE I FOR ATIO
TOP VIEW
OUT A
–IN A
1
2
3
4
5
6
7
14 OUT D
13 –IN D
12 +IN D
11 V
–
10 +IN C
9
8
–IN C
OUT C
50k
20V
+IN A
V
+
+IN B
–IN B
100Ω
RH1014M
OUT B
50k
–20V
RH1014M BI
J PACKAGE
14-LEAD CERAMIC DIP
TOP VIEW
OUT A
–IN A
+IN A
V
+
+IN B
–IN B
OUT B
1
2
3
4
5
6
7
14
13
12
11
10
9
8
OUT D
–IN D
+IN D
V
+
+IN C
–IN C
OUT C
WB PACKAGE
14-LEAD FLATPAK METAL SEALED
BOTTOM BRAZED
U
U
W W
W
W
U
U
U U
1
RH1014M
TABLE 1: ELECTRICAL CHARACTERISTICS
V
S
= ±15V, V
CM
= 0V, unless otherwise noted.
SYMBOL PARAMETER
V
OS
Input Offset Voltage
2
V
CM
= 0.1V
V
OS
Temp
V
OS
Time
I
OS
I
B
e
n
Average Tempco of Offset
Voltage
Long Term V
OS
Stability
Input Offset Current
2
Input Bias Current
2
Input Noise Voltage
Input Noise Voltage
Density
i
n
R
IN
A
VOL
Input Noise Current
Density
Input Resistance
Large-Signal Voltage Gain
0.1Hz to 10Hz
f
O
= 10Hz
f
O
= 1000Hz
f
O
= 10Hz
Differential
Common Mode
V
O
= ±10V, R
L
2k
V
O
= ±10V, R
L
600
V
O
= 5mV to 4V, R
L
= 500
Input Voltage Range
2
1
1
1,2
1,2
CMRR
PSRR
Common-Mode Rejection
Ratio
Power Supply Rejection
Ratio
Channel Separation
V
OUT
Output Voltage Swing
V
CM
= 13.5V, –15V
V
CM
= 13V, –14.9V
V
S
= ± 2V to ±18V
V
O
= ±10V, R
L
= 2k
R
L
2k
Output Low, No Load
Output Low, 600 to GND
Output Low, I
SINK
= 1mA
Output High, No Load
Output High, 600 to GND
SR
I
S
Slew Rate
Supply Current
Per Amplifier
2
2
2
2
2
2
4.0
3.4
0.2
100
120
±12.5
13.5
–15.0
3.5
0
97
1.2
0.5
1
1
70
4
2
1
CONDITIONS
NOTES
(Pre-Irradiation)
SUB-
– 55°C T
A
125°C
GROUP MIN TYP MAX
1
1
750
2.5
2
550
T
A
= 25°C
MIN TYP MAX
300
450
SUB-
GROUP
2,3
UNITS
µV
µV
µV
µV/°C
µV/Mo
0.5
10
10
30
50
0.55
24
22
0.07
1
1
1
1
20
20
45
120
2,3
2,3
2,3
2,3
nA
nA
nA
nA
µV
P-P
nV/ Hz
nV/ Hz
pA/ Hz
M
G
4
4
0.25
5,6
V/µV
V/µV
V/µV
V
V
V
V
1
94
1
1
4
25
10
350
4
4
4
4
4
4
0.55
0.50
1
1
0.70
0.65
2,3
2,3
3.1
5,6
18
5,6
±11.5
5,6
97
2,3
2,3
dB
dB
dB
dB
V
mV
mV
mV
V
V
V/µs
mA
mA
2
RH1014M
TABLE 1A: ELECTRICAL CHARACTERISTICS
V
S
= ±15V, V
CM
= 0V, T
A
= 25°C, unless otherwise noted.
SYMBOL PARAMETER
V
OS
Input Offset Voltage
2
I
OS
Input Offset Current
2
I
B
Input Bias Current
2
Input Voltage Range
1
1
2
2
CMRR
PSRR
A
VOL
V
OUT
Common-Mode Rejection
Ratio
Power Supply Rejection
Ratio
Large-Signal Voltage Gain
Maximum Output Voltage
Swing
V
CM
= 13V, – 15V
V
S
= ±10V to ±18V
R
L
10k, V
O
= ±10V
R
L
10k
Output Low, No Load
Output Low, 600 to GND
Output Low, I
SINK
= 1mA
Output High, No Load
Output High, 600 to GND
SR
I
S
Slew Rate
Supply Current
R
L
10k
Per Amplifier
2
2
2
2
2
2
4.0
3.4
0.13
0.55
0.50
13.5
–15.0
3.5
0
97
100
500
±12.5
25
10
0.6
4.0
3.2
0.12
0.55
0.50
CONDITIONS
10KRAD(Si)
20KRAD(Si)
50KRAD(Si)
NOTES MIN
MAX MIN
MAX MIN
MAX
450
600
10
10
60
80
13.5
–15.0
3.5
0
97
98
200
±12.5
30
10
0.8
4.0
3.0
0.11
0.55
0.50
450
600
10
10
75
100
13.5
– 15.0
3.5
0
94
94
100
±12.5
40
10
1.0
4.0
2.8
0.07
0.55
0.50
0.01
0.55
600
750
15
15
100
125
13.5
–15.0
3.5
0
90
86
50
±12.5
50
10
1.6
86
80
25
±12.5
100KRAD(Si)
MIN
MAX
750
900
20
20
175
200
13.5
–15.0
250
25
200KRAD(Si)
MIN
MAX UNITS
900
µV
µV
nA
nA
nA
nA
V
V
V
V
dB
dB
V/mV
V
mV
mV
V
V
V
V/µs
mA
mA
(Post-Irradiation) (Note 3)
Note 1:
Guaranteed by design, characterization, or correlation to other
tested parameters..
Note 2:
Specification applies for V
S+
= 5V, V
S–
= 0V, V
CM
= 0V,
V
OUT
= 1.4V.
3
RH1014M
TABLE 2: ELECTRICAL TEST REQUIRE E TS
MIL-STD-883 TEST REQUIREMENTS
Final Electrical Test Requirements (Method 5004)
Group A Test Requirements (Method 5005)
Group B and D for Class S, and
Group C and D for Class B
End Point Electrical Parameters (Method 5005)
* PDA applies to subgroup 1. See PDA Test Notes.
SUBGROUP
1*,2,3,4,5,6
1,2,3,4,5,6
1,2,3
PDA Test Notes
The PDA is specified as 5% based on failures from group A, subgroup 1,
tests after cooldown as the final electrical test in accordance with method
5004 of MIL-STD-883. The verified failures of group A, subgroup 1, after
burn-in divided by the total number of devices submitted for burn-in in
that lot shall be used to determine the percent for the lot.
Linear Technology Corporation reserves the right to test to tighter limits
than those given.
TOTAL DOSE BIAS CIRCUIT
10k
15V
–
10k
8V
+
–15V
TYPICAL PERFOR A CE CHARACTERISTICS
Supply Current (Per Amplifier)
0.8
V
S
= ±15V
R
L
= 10k
0.8
V
S
= ±15V
R
L
= 10k
0.6
NEGATIVE SLEW RATE (V/µs)
POSITIVE SLEW RATE (V/µs)
0.6
Positive Slew Rate
0.8
SUPPLY CURRENT (mA)
0.6
0.4
0.4
0.2
0.2
0
1
10
100
TOTAL DOSE KRAD (Si)
1000
RH1014M G01
0
1
10
100
TOTAL DOSE KRAD (Si)
1000
RH1014M G02
4
U W
RH1014M TDBC
U W
Negative Slew Rate
V
S
= ±15V
R
L
= 10k
0.4
0.2
0
1
10
100
TOTAL DOSE KRAD (Si)
1000
RH1014M G03
RH1014M
TYPICAL PERFOR A CE CHARACTERISTICS
Input Offset Voltage
300
200
100
0
V
S
= ±15V
V
CM
= 0V
INPUT OFFSET CURRENT (nA)
INPUT OFFSET VOLTAGE (µV)
INPUT BIAS CURRENT (nA)
–100
–200
–300
1
10
100
TOTAL DOSE KRAD (Si)
1000
RH1014M G04
Open-Loop Gain
150
COMMON-MODE REJECTION RATIO (dB)
150
POWER SUPPLY REJECTION RATIO (dB)
140
V
S
= ±15V
R
L
= 10k
V
OUT
= ±10V
OPEN-LOOP GAIN (dB)
130
120
110
100
90
80
1
10
100
TOTAL DOSE KRAD (Si)
1000
RH1014M G07
Input Noise Voltage Density
100
1000
GAIN BANDWIDTH PRODUCT (kHz)
INPUT NOISE VOLTAGE DENSITY (nV/√Hz)
90
80
70
60
50
40
30
20
10
0
1
V
S
= ±15V
f
O
= 10Hz
U W
Input Bias Current
70
60
50
40
30
20
10
0
1
10
100
TOTAL DOSE KRAD (Si)
1000
RH1014M G05
Input Offset Current
3
V
S
= ±15V
V
CM
= 0V
2
V
S
= ±15V
V
CM
= 0V
1
0
–1
–2
1
10
100
TOTAL DOSE KRAD (Si)
1000
RH1014M G06
Common-Mode Rejection Ratio
140
V
S
= ±15V
–15V
≤
V
CM
≤
13.5V
140
130
120
110
100
90
80
1
10
100
TOTAL DOSE KRAD (Si)
1000
RH1014M G08
Power Supply Rejection Ratio
V
S
= ±10V TO ±18V
130
120
110
100
90
80
70
1
10
100
TOTAL DOSE KRAD (Si)
1000
RH1014M G09
Gain Bandwidth Product
900
800
700
600
500
400
300
200
100
0
V
S
= ±5V
R
L
= 10k
10
100
TOTAL DOSE KRAD (Si)
1000
RH1014M G10
1
10
100
TOTAL DOSE KRAD (Si)
1000
RH1014M G11
5
stm32/stm8
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