RH118
Precision, High Speed
Operational Amplifier
U
W W
TOP VIEW
8
7
6
5
J8 PACKAGE
8-LEAD CERDIP
COMP2
V
+
DESCRIPTION
The RH118 is a precision, high speed operational amplifier
which offers wide bandwidth and high slew rate. Unlike
many wideband amplifiers, the RH118 is unity-gain stable
and has a slew rate of 50V/µs.
The wafer lots are processed to Linear Technology’s in-
house Class S flow to yield circuits usable in stringent
military applications.
, LTC and LT are registered trademarks of Linear Technology Corporation.
ABSOLUTE
MAXIMUM
RATINGS
Supply Voltage ...................................................... ± 20V
Differential Input Current (Note 1) ...................... ± 10mA
Input Voltage (Note 2) .......................................... ± 20V
Output Short-Circuit Duration ......................... Indefinite
Operating Temperature Range .............. – 55°C to 125°C
Storage Temperature Range ................. – 65°C to 150°C
Lead Temperature (Soldering, 10 sec).................. 300°C
BUR -I CIRCUIT
(Each Amplifier)
10k
20V
2
200Ω
3
10k
–20V
–20V
RH118 BI
20V
–
+
7
6
OR
249k
3V
2
–
+
7
6
3
4
4
PACKAGE/ORDER INFORMATION
TOP VIEW
COMP2
8
COMP1 1
–IN 2
+IN 3
4
V
–
(CASE)
H PACKAGE
8-LEAD TO-5 METAL CAN
–
TOP VIEW
7 V
+
6 OUT
5 COMP3
COMP1 1
–IN 2
+IN 3
V
–
4
NC
COMP1
–INPUT
+INPUT
V
–
OUT
COMP3
W
U
W
U
U
U U
+
301Ω
1
2
3
4
5
10
9
8
7
6
NC
COMP3
V
+
OUTPUT
COMP2
W PACKAGE
10-LEAD CERPAC
1
RH118
TABLE 1: ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER
V
OS
I
OS
I
B
R
IN
A
V
SR
GBW
Input Offset Voltage
Input Offset Current
Input Bias Current
Input Resistance
Large-Signal Voltage Gain V
S
= ± 15V, V
OUT
= ± 10V
R
L
2k
Slew Rate
Gain Bandwidth Product
Output Voltage Swing
Input Voltage Range
I
S
Supply Current
T
A
= 125°C
CMRR
PSRR
Common Mode Rejection
Ratio
Power Supply Rejection
Ratio
80
70
1
1
80
70
V
S
= ± 15V, A
V
= 1
V
S
= ± 15V
V
S
= ± 15V, R
L
= 2k
V
S
= ± 20V
± 12
± 16.5
8
5
4
1
50
50
15
4
1
1
7
2
2,3
2,3
± 12
± 16.5
5,6
2,3
1
25
2,3
CONDITIONS
NOTES
(Preirradiation) (Note 3)
T
A
= 25°C
MIN TYP MAX
4
50
250
SUB-
– 55°C T
A
125°C
GROUP MIN TYP MAX
1
1
1
6
100
500
SUB-
GROUP
2,3
2,3
2,3
UNITS
mV
nA
nA
M
V/mV
V/µs
MHz
V
V
mA
mA
dB
dB
TABLE 1A: ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER
V
OS
I
OS
I
B
R
IN
A
V
SR
GBW
Input Offset Voltage
Input Offset Current
Input Bias Current
Input Resistance
Large-Signal Voltage Gain V
S
= ± 15V, V
OUT
= ± 10V
R
L
2k
Slew Rate
Gain Bandwidth Product
Output Voltage Swing
Input Voltage Range
I
S
CMRR
PSRR
Supply Current
Common Mode Rejection
Ratio
Power Supply Rejection
Ratio
80
70
V
S
= ± 15V, A
V
= 1
V
S
= ± 15V
V
S
= ± 15V, R
L
= 2k
±12
±16.5
5
4
1
50
50
CONDITIONS
(Postirradiation) (Note 6)
50Krad(Si) 100Krad(Si) 200Krad(Si)
MIN MAX MIN MAX MIN MAX UNITS
4
50
250
1
50
50
15(Typ)
±12
±16.5
8
80
70
8
80
70
15(Typ)
±12
±16.5
8
80
70
0.5
50
50
15(Typ)
±12
±15
8
70
60
±12
±12
8
4
50
300
0.5
25
50
15(Typ)
10
100
400
mV
nA
nA
M
V/mV
V/µs
MHz
V
V
mA
dB
dB
10Krad(Si)
20Krad(Si)
NOTES MIN MAX MIN MAX
4
50
250
1
50
50
15(Typ)
4
50
250
2
RH118
ELECTRICAL CHARACTERISTICS
(Continued)
Note 4:
Guaranteed by design, characterization or correlation to other
tested parameters.
Note 5:
Slew rate is 100% tested at wafer probe testing. It is QA sample
tested in finished package form.
Note 6:
T
A
= 25°C, V
S
= ± 20V, V
CM
= 0V, unless otherwise specified.
Supply bypassed per Note 3.
Note 1:
The inputs are shunted with back-to-back Zeners for overvoltage
protection. Excessive current will flow if a differential voltage greater than
5V is applied to the inputs.
Note 2:
For supply voltages less than ± 15V, the maximum input voltage is
equal to the supply voltage.
Note 3:
These specifications apply for ± 5V V
S
± 20V. The power
supplies must be bypassed with a 0.1µF or greater disc capacitor within
four inches of the device.
TOTAL DOSE BIAS CIRCUIT
10k
15V
2
7
6
10k
8V
3
–
+
4
0.1µF
–15V
0.1µF
RH118 TDBC
TABLE 2: ELECTRICAL TEST REQUIRE E TS
MIL-STD-883 TEST REQUIREMENTS
Final Electrical Test Requirements (Method 5004)
Group A Test Requirements (Method 5005)
Group C and D End Point Electrical Parameters
(Method 5005)
* PDA Applies to subgroup 1. See PDA Test Notes.
SUBGROUP
1*,2,3,4,5,6
1,2,3,4,5,6
1
PDA Test Notes
The PDA is specified as 5% based on failures from group A, subgroup 1,
tests after cooldown as the final electrical test in accordance with method
5004 of MIL-STD-883 Class B. The verified failures (including Delta
parameters) of group A, subgroup 1, after burn-in divided by the total
number of devices submitted for burn-in in that lot shall be used to
determine the percent for the lot.
Linear Technology Corporation reserves the right to test to tighter limits
than those given.
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-
tation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
U W
3
RH118
TYPICAL PERFORMANCE CHARACTERISTICS
Input Offset Voltage
6
4
2
0
–2
–4
–6
V
S
=
±20V
V
CM
= 0V
INPUT BIAS CURRENT (nA)
INPUT OFFSET VOLTAGE (mV)
400
300
200
100
0
INPUT OFFSET CURRENT (nA)
1
10
100
TOTAL DOSE Krad (Si)
Open-Loop Gain
400
110
COMMON MODE REJECTION RATIO (dB)
100
90
80
70
60
50
40
POWER SUPPLY REJECTION RATIO (dB)
V
S
=
±15V
V
O
=
±10V
R
L
= 2k
OPEN-LOOP GAIN (V/mV)
300
200
100
0
1
10
100
TOTAL DOSE Krad (Si)
4
Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900
q
FAX
: (408) 434-0507
q
TELEX
: 499-3977
U W
RH118 G01
RH118 G02
Input Bias Current
600
500
V
S
=
±20V
V
CM
= 0V
60
40
20
0
–20
–40
–60
Input Offset Current
V
S
=
±20V
V
CM
= 0V
1000
1
10
100
TOTAL DOSE Krad (Si)
1000
RH118 G03
1
10
100
TOTAL DOSE Krad (Si)
1000
RH118 G05
Common Mode Rejection Ratio
V
S
=
±20V
V
CM
=
±16.5V
110
100
90
80
70
60
50
Power Supply Rejection Ratio
V
S
=
±5V
TO
±20V
40
1
10
100
TOTAL DOSE Krad (Si)
1000
RH118 G06
1000
1
10
100
TOTAL DOSE Krad (Si)
1000
RH118 G04
I.D. No. 66-11-0118 Rev. A 0796
LT/HP 0796 REV A 500 • PRINTED IN USA
©
LINEAR TECHNOLOGY CORPORATION 1989
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