Schottky Barrier Diode
RB168L100DD
Application
General rectification
Dimensions
(Unit : mm)
2.6±0.15
Datasheet
AEC-Q101 Qualified
Land
Size Figure
(Unit : mm)
2.0
2.0
1.2±0.3
Features
(PMDS)
2) High reliability
3) Super low I
R
1.5±0.2
2.0±0.2
4.5±0.2
1) Small power mold type
1
2
0.1±0.02
5.0±0.3
PMDS
Structure
Cathode
ROHM : PMDS
JEDEC : SOD-106
1
2
: Manufacture Date
Construction
Silicon epitaxial planar type
Taping
Dimensions
(Unit : mm)
2.0±0.05
4.0±0.1
Anode
1.550.05
φ1.55±0.05
1.75±0.1
0.3
5.5±0.05
1.55
φ1.55
2.9±0.1
4.0±0.1
2.8MAX
Absolute
Maximum Ratings
(T
c
= 25°C)
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average forward rectified current
Non-repetitive forward current surge peak
Symbol
V
RM
V
R
I
o
I
FSM
T
j
T
stg
Conditions
Duty≦0.5
Direct reverse voltage
Glass epoxy board mounted, 60Hz half sin wave,
5.3±0.1
0.05
9.5±0.1
Limits
100
100
1
50
150
55
to
150
12±0.2
4.2
Unit
V
V
A
A
°C
°C
resistive load, T
c
=125ºC Max.
60Hz half sin wave, one cycle,
non-repetitive at T
a
=25ºC
Operating junction temperature
Storage temperature
-
-
Electrical
Characteristics
(T
j
= 25°C)
Parameter
Forward voltage
Reverse current
Symbol
V
F
I
R
Conditions
I
F
=1.0A
V
R
=100V
Min.
-
-
Typ. Max. Unit
-
-
0.81
0.4
V
A
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© 2015 ROHM Co., Ltd. All rights reserved.
1/5
2016.11 - Rev.C
RB168L100DD
Electrical
Characteristic Curves
Data Sheet
200
180
170
T
j
=25°C
V
R
=100V
n=30pcs
165
T
j
=25°C
f=1MHz
V
R
=0V
n=10pcs
REVERSE CURRENT : I
R
(nA)
160
140
120
100
80
60
40
20
0
Ave. : 24.7nA
CAPACITANCE BETWEEN
TERMINALS : C
t
(pF)
160
155
150
145
140
135
130
Ave. : 141pF
I
R
DISPERSION MAP
C
t
DISPERSION MAP
200
40
PEAK SURGE
FORWARD CURRENT : I
FSM
(A)
180
160
140
120
100
80
60
40
20
0
Ave. :99.0A
I
FSM
1cyc
8.3ms
T
a
=25°C
REVERSE RECOVERY TIME : t
rr
(ns)
35
30
25
20
15
Ave. : 7.2ns
10
5
0
T
j
=25°C
I
F
=0.5A
I
R
=1.0A
I
rr
/ I
R
=0.25
n=10pcs
I
FSM
DISPERSION MAP
t
rr
DISPERSION MAP
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© 2015 ROHM Co., Ltd. All rights reserved.
3/5
2016.11 - Rev.C
RB168L100DD
Electrical
Characteristic Curves
Data Sheet
1000
3
TRANSIENT
THERMAL IMPEDANCE : R
th
(°C/W)
Glass epoxy board mounted
I
O
0A
0V
V
R
t
T
D=t/T
V
R
=V
RM
/2
T
j
=150°C
100
AVERAGE RECTIFIED
FORWARD CURRENT : I
o
(A)
R
th(j-a)
2
DC
D = 1/2
10
R
th(j-c)
Glass epoxy board mounted
IM=100mA
I
F
=2A
1
Sin(θ=180)
1
time
1ms 300s
0.1
0.001
0
100
1000
0
25
50
75
100
125
150
0.01
0.1
1
10
TIME : t(s)
R
th
-t CHARACTERISTICS
AMBIENT TEMPERATURE : T
a
(°C)
DERATING CURVE (I
o
-T
a
)
3
Glass epoxy board mounted
I
O
0A
0V
V
R
t
T
D=t/T
V
R
=V
RM
/2
T
j
=150°C
AVERAGE RECTIFIED
FORWARD CURRENT : I
o
(A)
2
DC
D = 1/2
1
Sin(θ=180)
0
0
25
50
75
100
125
150
CASE TEMPERATURE : T
c
(°C)
DERATING CURVE (I
o
-T
c
)
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© 2015 ROHM Co., Ltd. All rights reserved.
5/5
2016.11 - Rev.C
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