1N5711UB and 1N5712UB (CC, CA, & D)
Compliant
Schottky Barrier Diode
Ceramic Surface Mount
Qualified per MIL-PRF-19500/444
Qualified Levels:
JAN, JANTX, JANTXV
and JANS
DESCRIPTION
This 1N5711UB and 1N5712UB Schottky barrier diode is ceramic encased and offers military
grade qualifications for high-reliability applications. Unidirectional as well as doubler,
common anode and common cathode polarities are available.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
•
•
Surface mount equivalent of JEDEC registered 1N5711, 1N5712 numbers.
JAN, JANTX, JANTXV and commercial qualifications also available per MIL-PRF-19500/444 on
“1N” numbers only.
(See
Part Nomenclature
for all available options).
•
RoHS compliant by design.
UB Package
Also available in:
APPLICATIONS / BENEFITS
DO-35 package
(axial-leaded)
1N5711-1, 1N5712-1,
1N6857-1, and 1N6858-1
•
•
•
Low reverse leakage characteristics.
Low-profile ceramic surface mount package (see package illustration).
ESD sensitive to Class 1.
DO-213AA package
(surface mount)
1N5711UR-1, 1N5712UR-1,
1N6857UR-1, and
1N6858UR-1
MAXIMUM RATINGS
@ 25 ºC unless otherwise stated
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance, Junction-to-Solder Pad
Average Rectified Output Current:
1N5711UB
(2)
1N5712UB
Solder Temperature @ 10 s
NOTES:
1. At T
EC
and T
SP
= +140 °C, derate I
O
to 0 at +150 °C.
2. At T
EC
and T
SP
= +130 °C, derate I
O
to 0 at +150 °C.
(1)
Symbol
T
J
and T
STG
R
ӨJSP
I
O
Value
-65 to +150
100
33
75
260
Unit
ºC
ºC/W
mA
o
C
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0040-2, Rev. 1 (6/4/13)
©2013 Microsemi Corporation
Page 1 of 7
1N5711UB and 1N5712UB (CC, CA, & D)
MECHANICAL and PACKAGING
•
•
•
•
•
•
CASE: Ceramic.
TERMINALS: Gold plating over nickel under plate.
MARKING: Part number, date code, manufacturer’s ID.
TAPE & REEL option: Standard per EIA-418D. Consult factory for quantities.
WEIGHT: Approximately 0.04 grams.
See
Package Dimensions
on last page.
PART NOMENCLATURE
JAN
Reliability Level
JAN = JAN level
JANTX = JANTX level
JANTXV = JANTXV level
JANS = JANS level
Blank = Commercial grade
JEDEC type number
(see
Electrical Characteristics
table)
1N5711
UB
CA
Polarity
CA = Common Anode
CC = Common Cathode
D = Doubler
Blank = Unidirectional
Surface Mount package
Common Anode (CA)
Unidirectional (blank)
Doubler (D)
Common Cathode (CA)
Symbol
C
f
I
R
I
O
t
rr
V
(BR)
V
F
V
R
V
RWM
SYMBOLS & DEFINITIONS
Definition
Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage.
frequency
Reverse Current: The dc current flowing from the external circuit into the cathode terminal at the specified voltage V
R
.
Average Rectified Output Current: The Output Current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave
input and a 180 degree conduction angle.
Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from
the forward direction to the reverse direction and a specified decay point after a peak reverse current occurs.
Breakdown Voltage: A voltage in the breakdown region.
Forward Voltage: A positive dc anode-cathode voltage the device will exhibit at a specified forward current.
Reverse Voltage: A positive dc cathode-anode voltage below the breakdown region.
Working Peak Reverse Voltage: The peak voltage excluding all transient voltages (ref JESD282-B). Also sometimes
known historically as PIV.
T4-LDS-0040-2, Rev. 1 (6/4/13)
©2013 Microsemi Corporation
Page 2 of 7
1N5711UB and 1N5712UB (CC, CA, & D)
ELECTRICAL CHARACTERISTICS
@ 25 ºC unless otherwise noted
MINIMUM
BREAKDOWN
VOLTAGE
MAXIMUM
FORWARD
VOLTAGE
MAXIMUM
FORWARD
VOLTAGE
WORKING
PEAK
REVERSE
VOLTAGE
V
RWM
V (pk)
50
16
MAXIMUM
REVERSE
LEAKAGE
CURRENT
I
R
@ V
R
nA
Volts
200
50
150
16
MAXIMUM
CAPACITANCE
@ V
R
= 0
VOLTS
f = 1.0 MHz
C
T
pF
2.0
2.0
TYPE
NUMBER
1N5711UB
1N5712UB
NOTE:
V
(BR)
@ 10 µA
Volts
70
20
V
F
@ 1 mA
Volts
0.41
0.41
V
F
@ I
F
V @ mA
1.0 @ 15
1.0 @ 35
1.
Effective minority carrier lifetime (τ) is 100 pico seconds.
T4-LDS-0040-2, Rev. 1 (6/4/13)
©2013 Microsemi Corporation
Page 3 of 7
1N5711UB and 1N5712UB (CC, CA, & D)
GRAPHS
I
F
– Forward Current (mA)
V
F
– Forward Voltage (V)
FIGURE 1
I-V Curve showing typical Forward Voltage Variation
Temperature for the 1N5712 Schottky Diodes
I
R
– Reverse Current (nA)
V
R
– Reverse Voltage (V) (PULSED)
FIGURE 2
1N5712 Typical variation of Reverse
Current (I
R
) vs Reverse Voltage (V
R
) at Various Temperatures
T4-LDS-0040-2, Rev. 1 (6/4/13)
©2013 Microsemi Corporation
Page 4 of 7
1N5711UB and 1N5712UB (CC, CA, & D)
GRAPHS
I
F
– Forward Current (mA)
V
F
– Forward Voltage (V)
FIGURE 3
I – V curve showing typical Forward Voltage Variation
With Temperature Schottky Diode 1N5711
I
R
– Reverse Current (nA)
V
R
– Reverse Voltage (V) (PULSED)
FIGURE 4
1N5711 Typical Variation of Reverse Current (I
R
) vs Reverse Voltage (V
R
)
at Various Temperatures
T4-LDS-0040-2, Rev. 1 (6/4/13)
©2013 Microsemi Corporation
Page 5 of 7
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