MOSSTYLECHIPCAPACITORS
MSCC 2 - MSCC 4
MSCC SERIES
MSCC-2
L
SIZE
CAPACIT
ACITANCE VALUES
CAPACITANCE VALUES (pF)
0.020" x 0.020" (±0.003") x 0.010" (±0.001")
4.7
5.6
6.8
8.2
12
13
15
16
22
24
27
30
39
43
47
51
pF
4.7 - 10
11 - 20
21 - 51
10
18
33
11
20
36
W
MSCC 5
TOLERANCES
TOLERANCE(S)
±0.5pF
5%, 10%, 20%
2.5%, 5%, 10%, 20%
MSCC-3
L
SIZE
CAPACIT
ACITANCE VALUES
CAPACITANCE VALUES (pF)
TOLERANCES
0.030" x 0.030" (±0.003") x 0.010" (±0.001")
33
36
39
43
47
62
68
75
82
91
pF
33 - 100
TOLERANCE(S)
2.5%, 5%, 10%, 20%
51
100
56
W
MSCC-4
SIZE
CAPACIT
ACITANCE VALUES
CAPACITANCE VALUES (pF)
0.040" x 0.040" (±0.003") x 0.010" (±0.001")
56
62
68
75
100
110
120
130
180
200
220
pF
56 - 220
82
150
91
160
WORKING VOLTAGE (V)
MSCC 2
WORKING VOLTAGE vs CAPACITANCE
250
225
200
175
150
125
100
75
50
25
0
4.7
TOLERANCES
TOLERANCE(S)
2.5%, 5%, 10%, 20%
MSCC-5
6.8
10
12 15 18
22 27
CAPACITANCE (pF)
33
39
47
SIZE
CAPACIT
ACITANCE VALUES
CAPACITANCE VALUES (pF)
WORKING VOLTAGE (V)
250
225
200
175
150
125
100
75
50
25
0
33
MSCC 3
WORKING VOLTAGE vs CAPACITANCE
0.055" x 0.055" (±0.003") x 0.010" (±0.001")
150
160
180
200
270
300
330
360
470
510
560
620
820
910
1000
pF
150 - 1000
220
390
680
240
430
750
TOLERANCES
TOLERANCE(S)
2.5%, 5%, 10%, 20%
DAT
COMMON SERIES DATA
36
39
43
47 51 56 62 68
CAPACITANCE (pF)
75
82
91 100
WORKING VOLTAGE (V)
250
225
200
175
150
125
100
75
50
25
0
56
MSCC 4
WORKING VOLTAGE vs CAPACITANCE
68
82
100
120
CAPACITANCE (pF)
150
180
220
SUBSTRATE
SUBSTRATE
DIELECTRIC
PAD
BOND PAD
BACKSIDE
T.C.C.
OPERATING TEMPERATURE
OPERATING TEMPERATURE RANGE
DISSIPA
FACTOR
DISSIPATION FACTOR
Q
INSULATION RESISTANCE
INSULATION RESISTANCE
RESISTANCE
MOISTURE RESISTANCE
THERMAL SHOCK
TEMPERATURE
HIGH TEMPERATURE EXPOSURE
SHORT TERM OVERLOAD
STABILITY
STABILITY
250
225
200
175
150
125
100
75
50
25
0
150 180
MSCC 5
WORKING VOLTAGE vs CAPACITANCE
220 270 330 390 470 560 680 820 1000
CAPACITANCE (pF)
SILICON
SILICON OXIDE
STANDARD;
GOLD STANDARD; ALUMINUM OPTIONAL
SUITABLE
ATT
TTA
GOLD, SUITABLE FOR EUTECTIC OR CONDUCTIVE EPOXY ATTATCH
+45ppm/°C, ±25ppm/°C
-55°C TO +150°C
1Vrms,
1KHz, 1Vrms, 25°C, 0.1%
1MHz, 50Vrms, 25°C, 1000 MIN.
50Vrms,
VOLT
@ WORKING VOLTAGE, 10
9
Ω
MIL-STD 202, METHOD 106,
∆
C:
GREATER
±1pF OR 2%
∆
C MAX., WHICHEVER IS GREATER
107F,
MIL-STD 202, METHOD 107F,
∆
C:
±0.5pF MAX., MSI TYPICAL ±0.1pF
150°C, 100 HRS.,
∆
C:
GREATER
±0.5pF OR 1%
∆
C MAX., WHICHEVER IS GREATER
1.5X
VOLT
1.5X WORKING VOLTAGE, 5 SEC.,
∆
C:
GREATER
±0.5pF OR 1%
∆
C MAX., WHICHEVER IS GREATER
70°C,
VOLT
1000 HRS., 70°C, @ WORKING VOLTAGE
∆
C:
±2.5%
GREATER
±2.5pF OR ±2.5% MAX.
∆
C, WHICHEVER IS GREATER
XXXXX
CAPACIT
ACITANCE VALUE
CAPACITANCE VALUE
5-Digit Number: First 4 Digits
Are Significant
With "R" As Decimal Point
When Required.
5th Digit Represents
Number of Zeros.
X
X
CHIP
CHIP
CHIP
CHIP
CHIP
CAPACITORS
CAPACITORS
CAPACITORS
CAPACITORS
CAPACITORS
WORKING VOLTAGE (V)
DESIGNATION
PART NUMBER DESIGNATION
MSCC
SERIES
X
SIZE
2
3
4
5
SA
TYPE
TOL.
OPTION
±0.5p
*A =±0.5 p F
E = Aluminum Pads
H = 2.5%
G = Gold Pads
5%
J=
K = 10%
M = 20%
* Use for MSCC-2
4.7pF to 10pF
MINI-SYSTEMS, INC.
THIN FILM DIVISION
DAVID
ATTLEBORO,
20 DAVID ROAD, N. ATTLEBORO, MA 02760
508-695-0203 FAX: 508-695-6076
DCN TF 114-F-0306
EXAMPLE: MSCC5SA-510R0H-E = 0.055" x 0.055", Silicon Substrate,
510pF,
Tol.,
510pF, ±2.5% Tol., Aluminum Pads
stm32/stm8
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