MMBT2222AM3T5G
NPN General Purpose
Transistor
The MMBT2222AM3T5G device is a spin−off of our popular
SOT−23 three−leaded device. It is designed for general purpose
amplifier applications and is housed in the SOT−723 surface mount
package. This device is ideal for low−power surface mount
applications where board space is at a premium.
Features
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•
Reduces Board Space
•
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
40
75
6.0
600
Unit
Vdc
Vdc
Vdc
mAdc
1
2
3
COLLECTOR
3
1
BASE
2
EMITTER
MARKING
DIAGRAM
SOT−723
CASE 631AA
STYLE 1
AA M
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
FR− 5 Board (Note 1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
Alumina Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Symbol
P
D
265
mW/°C
2.1
R
qJA
P
D
470
640
5.1
R
qJA
T
J
, T
stg
195
−55 to
+150
°C/W
mW
mW/°C
°C/W
°C
Max
Unit
mW
AA
M
= Specific Device Code
= Date Code
ORDERING INFORMATION
Device
MMBT2222AM3T5G
Package
SOT−723
(Pb−Free)
Shipping
†
8000/Tape &
Reel
8000/Tape &
Reel
NSVMMBT2222AM3T5G SOT−723
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR− 5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
©
Semiconductor Components Industries, LLC, 2012
1
March, 2017 − Rev. 2
Publication Order Number:
MMBT2222AM3/D
MMBT2222AM3T5G
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (I
C
= 10 mAdc, I
B
= 0)
Collector −Base Breakdown Voltage (I
C
= 10
mAdc,
I
E
= 0)
Emitter −Base Breakdown Voltage (I
E
= 10
mAdc,
I
C
= 0)
Collector Cutoff Current (V
CE
= 60 Vdc, V
EB(off)
= 3.0 Vdc)
Collector Cutoff Current
(V
CB
= 60 Vdc, I
E
= 0)
(V
CB
= 60 Vdc, I
E
= 0, T
A
= 125°C)
Emitter Cutoff Current (V
EB
= 3.0 Vdc, I
C
= 0)
Base Cutoff Current (V
CE
= 60 Vdc, V
EB(off)
= 3.0 Vdc)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 0.1 mAdc, V
CE
= 10 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc)
(I
C
= 10 mAdc, V
CE
= 10 Vdc)
(I
C
= 10 mAdc, V
CE
= 10 Vdc, T
A
= −55°C)
(I
C
= 150 mAdc, V
CE
= 10 Vdc) (Note 3)
(I
C
= 150 mAdc, V
CE
= 1.0 Vdc) (Note 3)
(I
C
= 500 mAdc, V
CE
= 10 Vdc) (Note 3)
Collector −Emitter Saturation Voltage (Note 3)
(I
C
= 150 mAdc, I
B
= 15 mAdc)
(I
C
= 500 mAdc, I
B
= 50 mAdc)
Base −Emitter Saturation Voltage (Note 3)
(I
C
= 150 mAdc, I
B
= 15 mAdc)
(I
C
= 500 mAdc, I
B
= 50 mAdc)
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product (Note 4)
(I
C
= 20 mAdc, V
CE
= 20 Vdc, f = 100 MHz)
Output Capacitance (V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
Input Capacitance (V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
Input Impedance
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
Small −Signal Current Gain
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
Output Admittance
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
Collector Base Time Constant
(I
E
= 20 mAdc, V
CB
= 20 Vdc, f = 31.8 MHz)
Noise Figure (I
C
= 100
mAdc,
V
CE
= 10 Vdc, R
S
= 1.0 kW, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(V
CC
= 30 Vdc, V
BE(off)
= − 0.5 Vdc,
I
C
= 150 mAdc, I
B1
= 15 mAdc)
(V
CC
= 30 Vdc, I
C
= 150 mAdc,
I
B1
= I
B2
= 15 mAdc)
t
d
t
r
t
s
t
f
−
−
−
−
10
25
225
ns
60
ns
f
T
300
C
obo
C
ibo
h
ie
2.0
0.25
h
re
−
−
h
fe
50
75
h
oe
5.0
25
rb, C
c
−
NF
−
150
4.0
dB
35
200
ps
300
375
mmhos
8.0
4.0
−
8.0
1.25
X 10
− 4
−
−
−
8.0
25
pF
pF
kW
MHz
h
FE
35
50
75
35
100
50
40
V
CE(sat)
−
−
V
BE(sat)
0.6
−
1.2
2.0
0.3
1.0
Vdc
−
−
−
−
300
−
−
Vdc
−
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEX
I
CBO
−
−
I
EBO
I
BL
−
−
0.01
10
100
20
nAdc
nAdc
40
75
6.0
−
−
−
−
10
Vdc
Vdc
Vdc
nAdc
mAdc
Symbol
Min
Max
Unit
3. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2.0%.
4. f
T
is defined as the frequency at which |h
fe
| extrapolates to unity.
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2
MMBT2222AM3T5G
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+ 30 V
+16 V
0
-2 V
1.0 to 100
ms,
DUTY CYCLE
≈
2.0%
1 kW
< 2 ns
200
+16 V
0
C
S
* < 10 pF
-14 V
< 20 ns
1k
1N914
C
S
* < 10 pF
1.0 to 100
ms,
DUTY CYCLE
≈
2.0%
+ 30 V
200
-4 V
Scope rise time < 4 ns
*Total shunt capacitance of test jig, connectors, and oscilloscope.
Figure 1. Turn−On Time
Figure 2. Turn−Off Time
1000
700
500
hFE , DC CURRENT GAIN
300
200
T
J
= 125°C
25°C
100
70
50
30
20
10
0.1
-55°C
V
CE
= 1.0 V
V
CE
= 10 V
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
20 30
I
C
, COLLECTOR CURRENT (mA)
50
70
100
200
300
500 700 1.0 k
Figure 3. DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0
T
J
= 25°C
0.8
0.6
I
C
= 1.0 mA
10 mA
150 mA
500 mA
0.4
0.2
0
0.005
0.01
0.02 0.03
0.05
0.1
0.2
0.3
0.5
1.0
I
B
, BASE CURRENT (mA)
2.0
3.0
5.0
10
20
30
50
Figure 4. Collector Saturation Region
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3
MMBT2222AM3T5G
200
100
70
50
t, TIME (ns)
30
20
10
7.0
5.0
3.0
2.0
5.0 7.0
10
200 300
20 30
50 70 100
I
C
, COLLECTOR CURRENT (mA)
500
I
C
/I
B
= 10
T
J
= 25°C
t
r
@ V
CC
= 30 V
t
d
@ V
EB(off)
= 2.0 V
t
d
@ V
EB(off)
= 0
500
300
200
100
70
50
30
20
10
7.0
5.0
5.0 7.0 10
20 30
50 70 100
200
I
C
, COLLECTOR CURRENT (mA)
300
500
t′
s
= t
s
- 1/8 t
f
V
CC
= 30 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25°C
t, TIME (ns)
t
f
Figure 5. Turn −On Time
Figure 6. Turn −Off Time
10
8.0
NF, NOISE FIGURE (dB)
I
C
= 1.0 mA, R
S
= 150
W
500
mA,
R
S
= 200
W
100
mA,
R
S
= 2.0 kW
50
mA,
R
S
= 4.0 kW
R
S
= OPTIMUM
R
S
=
SOURCE
R
S
=
RESISTANCE
10
f = 1.0 kHz
8.0
NF, NOISE FIGURE (dB)
I
C
= 50
mA
100
mA
500
mA
1.0 mA
6.0
6.0
4.0
4.0
2.0
2.0
0
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
20
50 100
0
50
100 200
500 1.0 k 2.0 k
5.0 k 10 k 20 k
50 k 100 k
f, FREQUENCY (kHz)
R
S
, SOURCE RESISTANCE (OHMS)
Figure 7. Frequency Effects
Figure 8. Source Resistance Effects
30
20
CAPACITANCE (pF)
C
eb
10
7.0
5.0
C
cb
3.0
2.0
0.1
f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
500
V
CE
= 20 V
T
J
= 25°C
300
200
100
70
50
1.0
0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
REVERSE VOLTAGE (VOLTS)
20 30
50
2.0
3.0
5.0 7.0 10
20 30
I
C
, COLLECTOR CURRENT (mA)
50
70 100
Figure 9. Capacitances
Figure 10. Current−Gain Bandwidth Product
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4
MMBT2222AM3T5G
1.0
T
J
= 25°C
0.8
V
BE(sat)
@ I
C
/I
B
= 10
0.6
V
BE(on)
@ V
CE
= 10 V
0.4
1.0 V
COEFFICIENT (mV/
°
C)
V, VOLTAGE (VOLTS)
0
- 0.5
- 1.0
- 1.5
- 2.0
V
CE(sat)
@ I
C
/I
B
= 10
0
- 2.5
0.1 0.2
50 100 200
0.5 1.0 2.0 5.0 10 20
I
C
, COLLECTOR CURRENT (mA)
500 1.0 k
0.1 0.2
0.5
1.0 2.0
5.0 10 20
50 100 200
I
C
, COLLECTOR CURRENT (mA)
500
R
qVB
for V
BE
R
qVC
for V
CE(sat)
+0.5
0.2
Figure 11. “On” Voltages
Figure 12. Temperature Coefficients
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