DG201HS
High-Speed Quad SPST CMOS Analog Switch
Features
D
D
D
D
D
D
D
Fast Switching—t
ON
: 38 ns
Low On-Resistance: 25
W
Low Leakage: 100 pA
Low Charge Injection
TTL/CMOS Logic Compatible
Single Supply Compatibility
High Current Rating: –30 mA
Benefits
D
D
D
D
D
D
D
Faster Throughput
Higher Accuracy
Reduced Pedestal Error
Upgrades Existing Designs
Simple Interfacing
Replaces HI201HS, ADG201HS
Space Savings (TSSOP)
Applications
D
D
D
D
D
D
D
D
D
Data Acquisition
Hi-Rel Systems
Sample-and-Hold Circuits
Communication Systems
Automatic Test Equipment
Integrator Reset Circuits
Choppers
Gain Switching
Avionics
Description
The DG201HS is an improved monolithic device
containing four independent analog switches. It is
designed to provide high speed, low error switching of
analog signals. Combining low on-resistance (25
W)
with
high speed (t
ON
: 38 ns), the DG201HS is ideally suited for
high speed data acquisition requirements.
To achieve high voltage ratings and superior switching
performance, the DG201HS is built on a proprietary
high-voltage silicon-gate process. An epitaxial layer
prevents latchup.
Each switch conducts equally well in both directions
when on, and blocks input voltages to the supply values,
when off.
Functional Block Diagram and Pin Configuration
Dual-In-Line, SOIC and TSSOP
D
1
IN
1
D
1
S
1
V–
GND
S
4
D
4
IN
4
1
2
3
4
5
6
7
8
Top View
16 IN
2
15 D
2
14 S
2
V–
13 V+
NC
12 NC
11 S
3
10 D
3
9
IN
3
GND
S
4
Key
4
5
6
7
8
9
D
4
10
11
12
13
D
3
3
2
LCC
IN
1
NC IN
2
1
20
D
2
19
18
17
16
15
14
S
2
V+
NC
NC
S
3
S
1
Truth Table
Logic
0
1
Switch
ON
OFF
Logic “0”
v
0.8 V
g
Logic
L i “1”
w
2 4 V
2.4
IN
4
NC IN
3
Top View
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70038.
Siliconix
E-77071—Rev. E, 01-Sep-97
1
DG201HS
Ordering Information
Temp Range
Package
16-Pin Plastic DIP
Part Number
DG201HSDJ
DG201HSDY
DG201HSDQ
DG201HSAK/883
DG201HSAZ/883
–40 to 85_C
16-Pin Narrow SOIC
16-Pin TSSOP
16-Pin CerDIP
–55 to 125_C
LCC-20
Absolute Maximum Ratings
V+ to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V
GND to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V
Digital Inputs
a
V
S
, V
D
. . . . . . . . . . . . . . . . . . (V–) –4 V to (V+) +4 V
or 30 mA, whichever occurs first
Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . 30 mA
Current, S or D (Pulsed 1 ms, 10% duty cycle) . . . . . . . . . . . . 100 mA
Storage Temperature
(A Suffix) . . . . . . . . . . . . . –65 to 150_C
(D Suffix) . . . . . . . . . . . . . –65 to 125_C
Notes:
a. Signals on S
X
, D
X
, or IN
X
exceeding V+ or V– will be clamped
by internal diodes. Limit forward diode current to maximum
current ratings.
b. All leads welded or soldered to PC board.
c. Derate 6 mW/_C above 75_C.
d. Derate 12 mW/_C above 75_C.
e. Derate 7.6 mW/_C above 75_C.
16-Pin CerDIP
d
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW
16-Pin Narrow Body SOIC and TSSOP
e
. . . . . . . . . . . . . . . . 600 mW
LCC-20
d
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW
Power Dissipation (Package)b
16-Pin Plastic DIP
c
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW
Schematic Diagram (Typical Channel)
V+
5V
Reg
Level
Shift/
Drive
IN
X
V–
V+
D
X
S
X
GND
V–
Figure 1.
2
Siliconix
E-77071—Rev. E, 01-Sep-97
DG201HS
Specifications
a
Conditions Unless
Otherwise Specified
Parameter
Analog Switch
Analog Signal Range
e
Drain-Source On-Resistance
r
DS(on)
Match
I
S(off)
Switch Off Leakage Current
I
D(off)
Channel On Leakage Current
I
D(on)
V+ = 16.5 V, V– = –16.5 V
V
D =
"15.5
V
V
S
=
#15.5
V
V+ = 16.5 V, V– = –16.5 V
V
S
= V
D
=
#15.5
V
V
ANALOG
r
DS(on)
I
S
= –10 mA, V
D
=
"8.5
V
V+ = 13.5 V, V– = –13.5 V
Full
Room
Full
Room
Room
Full
Room
Full
Room
Full
25
3
0.1
0.1
0.1
–1
–60
–1
–60
–1
–60
1
60
1
60
1
60
–1
–20
–1
–20
–1
–20
1
20
1
20
1
20
nA
V–
V+
50
75
V–
V+
50
75
V
W
%
A Suffix
–55 to 125_C
D Suffix
–40 to 85_C
Symbol
V = 15 V, V– = –15 V
VV
15
V+
V
IN
= 3 V, 0.8 V
f
Temp
b
Typ
c
Min
d
Max
d
Min
d
Max
d
Unit
Digital Control
Input, High Voltage
Input, Low Voltage
Input Capacitance
Input Current
V
INH
V
INL
C
in
I
INL
or
I
INH
V
IN
under test = 0.8 V, 3 V
Full
Full
Full
Full
5
–1
1
–1
1
2.4
0.8
2.4
0.8
V
pF
mA
Dynamic Characteristics
Turn-On Time
t
ON
t
OFF1
t
OFF2
Output Settling Time to 0.1%
Charge Injection
OFF Isloation
Crosstalk
(Channel-to-Channel)
Source Off Capacitance
Drain Off Capacitance
Channel On Capacitance
Drain-to-Source Capacitance
t
s
Q
OIRR
C
L
= 1 nF, V
S
= 0 V
V
gen
= 0 V, R
gen
= 0
W
R
L
= 1 kW , C
L
= 10 pF
f = 100 kHz
Any Other Channel Switches
R
L
= 1 kW , C
L
= 10 pF
f = 100 kHz
R
L
= 1 kW , C
L
= 35 pF
V
S
=
"10
V, V
INH
= 3 V
See Figure 3
Room
Full
Room
Full
Room
Room
Room
Room
48
30
150
180
–5
85
dB
Room
Room
Room
V
S
, V
D
= 0 V f = 1 MHz
V,
Room
Room
100
8
8
30
0.5
pF
pC
60
75
50
70
60
75
50
70
ns
Turn-Off Time
X
TALK
C
S(off)
C
D(off)
C
D(on)
C
DS(off)
Power Supplies
Positive Supply Current
Negative Supply Current
Power Consumption
c
I+
I–
P
C
V+ = 15 V, V– = –15 V
VV
15
V
IN
= 0 or 5 V
Room
Full
Room
Full
Full
4.5
10
3.5
–6
240
–6
240
mW
10
mA
Siliconix
E-77071—Rev. E, 01-Sep-97
3
DG201HS
Specifications
a
for Single Supply
Conditions Unless
Otherwise Specified
V+ = 10.8 V to 16.5 V
V– = GND = 0 V
V
IN
= 3 V, 0.8 V
f
A Suffix
–55 to 125_C
D Suffix
–40 to 85_C
Parameter
Analog Switch
Analog Signal Range
e
Drain-Source On-Resistance
Symbol
Temp
b
Typ
c
Min
d
Max
d
Min
d
Max
d
Unit
V
ANALOG
r
DS(on)
I
S(off)
I
S
= –10 mA, V
D
= 8.5 V
V+ = 10.8 V
Full
Room
Full
Room
Full
Room
Full
Room
Full
65
0.1
0.1
0.1
0
V+
90
120
0
V+
90
120
V
W
Switch Off Leakage Current
I
D(off)
Channel On Leakage Current
I
D(on)
+
I
S(on)
V+ = 16.5 V, V
S
= 0.5 V, 10 V
,
,
V
D
= 10 V 0 5 V
V, 0.5
–1
–60
–1
–60
–1
–60
1
60
1
60
1
60
–1
–20
–1
–20
–1
–20
1
20
1
20
1
20
nA
V+ = 16.5 V, V
D
= 0.5 V, 10 V
Digital Control
Input, High Voltage
Input, Low Voltage
Input Capacitance
Input Current
V
INH
V
INL
C
in
I
INL
or
I
INH
V+ = 16.5 V
V
IN
under test = 0.8 V, 3 V
Full
Full
Full
Full
5
–1
1
–1
1
2.4
0.8
2.4
0.8
V
pF
mA
Dynamic Characteristics
Turn-On Time
t
ON
t
OFF1
t
OFF2
Output Settling Time to 0.1%
Charge Injection
Off Isloation
Crosstalk
(Channel-to-Channel)
Source Off Capacitance
Drain Off Capacitance
Channel On Capacitance
t
s
Q
OIRR
C
L
= 1 nF, V
S
= 0 V
V
gen
= 0 V, R
gen
= 0
W
R
L
= 1 kW , C
L
= 10 pF
f = 100 kHz
Any Other Channel Switches
R
L
= 1 kW , C
L
= 10 pF
f = 100 kHz
f = 1 MHz
V
ANALOG
= 0 V
R
L
= 1 kW , C
L
= 35 pF, V
S
= 2 V
F
V= 10.8 V, See Figure 2
Room
Full
Room
Full
Room
Room
Room
Room
150
180
10
85
dB
Room
Room
Room
Room
100
10
10
30
pF
pC
50
70
50
70
50
70
50
70
ns
Turn-Off Time
X
TALK
C
S(off)
C
D(off)
C
D(on)
Power Supplies
Positive Supply Current
Power Consumption
c
I+
P
C
V+ = 15 V, V
IN
= 0 or 5 V
V
Full
Full
10
150
10
150
mA
mW
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. V
IN
= input voltage to perform proper function.
4
Siliconix
E-77071—Rev. E, 01-Sep-97
DG201HS
Typical Characteristics
70
r
DS(on)
– Drain-Source On-Resistance (
W
)
60
50
40
"10
V
30
20
"20
V
10
0
–20 –16 –12 –8
–4
0
4
8
12
16
20
V
D
– Drain Voltage (V)
180
r
DS(on)
– Drain-Source On-Resistance (
W
)
160
140
120
100
80
10 V
60
40
20
0
0
2
4
6
8
10
12
14
16
V
D
– Drain Voltage (V)
10 pA
–60 –40 –20
0
20
40
60
80 100 120 140
12 V
15 V
7V
Leakage
1 nA
I
D(on)
100 pA
I
S(off),
I
D(off)
"15
V
r
DS(on)
vs. V
D
and Power Supply Voltages
r
DS(on)
– Drain-Source On-Resistance (
W
)
50
r
DS(on)
vs. V
D
and Temperature
V+ = 15 V
V– = –15 V
40
125_C
30
85_C
25_C
20
0_C
–55_C
10
"5
V
0
–15
–10
–5
0
5
10
15
V
D
– Drain Voltage (V)
10 nA
r
DS(on)
vs. V
D
and Single Power Supply Voltages
V+ = 5 V
Leakage Currents vs. Temperature
Temperature (_C)
Input Switching Threshold vs. Supply Voltage
2.5
55
Switching Time vs. Power Supply Voltage
2
Switching Time (ns)
50
V
IN
( V )
1.5
45
t
ON
1
40
0.5
35
t
OFF
0
"4
30
"6
"8
"10 "12 "14 "16 "18 "20
"4
"6
"8
"10 "12 "14 "16 "18 "20
Supply Voltage (V)
Positive/Negative Supplies (V)
Siliconix
E-77071—Rev. E, 01-Sep-97
5
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