MC74HC1G00
Single 2-Input NAND Gate
The MC74HC1G00 is a high speed CMOS 2−input NAND gate
fabricated with silicon gate CMOS technology.
The internal circuit is composed of multiple stages, including a
buffer output which provides high noise immunity and stable output.
•
•
•
•
•
•
•
•
High Speed: t
PD
= 7 ns (Typ) at V
CC
= 5 V
Low Power Dissipation: I
CC
= 1
mA
(Max) at T
A
= 25°C
High Noise Immunity
Balanced Propagation Delays (t
PLH
= t
PHL
)
Symmetrical Output Impedance (I
OH
= I
OL
= 2 mA)
Chip Complexity: FETs = 40
These Devices are Pb−Free and are RoHS Compliant
NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
5
1
SC70−5/SC−88A/SOT−353
DF SUFFIX
CASE 419A
H1 MG
G
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MARKING
DIAGRAMS
5
1
IN B
1
5
V
CC
SOT23−5/TSOP−5/SC59−5
DT SUFFIX
CASE 483
H1
M
G
= Specific Device Code
= Date Code
= Pb−Free Package
H1 MG
G
IN A
2
GND
3
4
OUT Y
(Note: Microdot may be in either location)
Figure 1. Pinout
(Top View)
PIN ASSIGNMENT
1
IN A
IN B
2
&
OUT Y
3
4
5
IN B
IN A
GND
OUT Y
V
CC
Figure 2. Logic Symbol
FUNCTION TABLE
Inputs
A
L
L
H
H
B
L
H
L
H
Output
Y
H
H
H
L
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
©
Semiconductor Components Industries, LLC, 2013
June, 2013
−
Rev. 11
1
Publication Order Number:
MC74HC1G00/D
MC74HC1G00
MAXIMUM RATINGS
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
T
STG
T
L
T
J
q
JA
P
D
MSL
F
R
V
ESD
DC Supply Voltage
DC Input Voltage
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Sink Current
DC Supply Current per Supply Pin
Storage Temperature Range
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature Under Bias
Thermal Resistance
Power Dissipation in Still Air at 85_C
Moisture Sensitivity
Flammability Rating
ESD Withstand Voltage
Oxygen Index: 28 to 34
Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
Above V
CC
and Below GND at 125_C (Note 5)
SC70−5/SC−88A (Note 1)
TSOP−5
SC70−5/SC−88A
TSOP−5
Parameter
Value
*0.5
to
)7.0
*0.5
to V
CC
)0.5
*0.5
to V
CC
)0.5
$20
$20
$12.5
$25
*65
to
)150
260
)150
350
230
150
200
Level 1
UL 94 V−0 @ 0.125 in
u2000
u200
N/A
$500
V
Unit
V
V
V
mA
mA
mA
mA
_C
_C
_C
_C/W
mW
I
LATCHUP
Latchup Performance
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace with no air flow.
2. Tested to EIA/JESD22−A114−A.
3. Tested to EIA/JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
IN
V
OUT
T
A
t
r
, t
f
DC Supply Voltage
DC Input Voltage
DC Output Voltage
Operating Temperature Range
Input Rise and Fall Time
V
CC
= 2.0 V
V
CC
= 3.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
NORMALIZED FAILURE RATE
Parameter
Min
2.0
0.0
0.0
*55
0
0
0
0
Max
6.0
V
CC
V
CC
)125
1000
600
500
400
Unit
V
V
V
_C
ns
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Temperature
°C
80
90
100
110
120
130
140
Time, Hours
1,032,200
419,300
178,700
79,600
37,000
17,800
8,900
Time, Years
117.8
47.9
20.4
9.4
4.2
2.0
1.0
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
T
J
= 130_C
T
J
= 120_C
T
J
= 100_C
T
J
= 110_C
T
J
= 90_C
T
J
= 80_C
100
TIME, YEARS
1
1
10
1000
Figure 3. Failure Rate vs. Time Junction Temperature
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2
MC74HC1G00
DC ELECTRICAL CHARACTERISTICS
V
CC
Symbol
V
IH
Parameter
Minimum High−Level
Input Voltage
Test Conditions
(V)
2.0
3.0
4.5
6.0
2.0
3.0
4.5
6.0
V
IN
= V
IH
or V
IL
I
OH
=
−20
mA
2.0
3.0
4.5
6.0
4.5
6.0
2.0
3.0
4.5
6.0
4.5
6.0
6.0
6.0
1.9
2.9
4.4
5.9
4.18
5.68
2.0
3.0
4.5
6.0
4.31
5.80
0.0
0.0
0.0
0.0
0.17
0.18
0.1
0.1
0.1
0.1
0.26
0.26
$0.1
1.0
Min
1.5
2.1
3.15
4.20
0.5
0.9
1.35
1.80
1.9
2.9
4.4
5.9
4.13
5.63
0.1
0.1
0.1
0.1
0.33
0.33
$1.0
10
T
A
= 25_C
Typ
Max
T
A
v
85_C
Min
1.5
2.1
3.15
4.20
0.5
0.9
1.35
1.80
1.9
2.9
4.4
5.9
4.08
5.58
0.1
0.1
0.1
0.1
0.40
0.40
$1.0
40
mA
mA
V
Max
*55_C
v
T
A
v
125_C
Min
1.5
2.1
3.15
4.20
0.5
0.9
1.35
1.80
Max
Unit
V
V
IL
Maximum Low−Level
Input Voltage
V
V
OH
Minimum High−Level
Output Voltage
V
IN
= V
IH
or V
IL
V
V
IN
= V
IH
or V
IL
I
OH
=
−2
mA
I
OH
=
−2.6
mA
V
OL
Maximum Low−Level
Output Voltage
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
I
OL
= 20
mA
V
IN
= V
IH
or V
IL
I
OL
= 2 mA
I
OL
= 2.6 mA
I
IN
I
CC
Maximum Input
Leakage Current
Maximum Quiescent
Supply Current
V
IN
= 6.0 V or GND
V
IN
= V
CC
or GND
AC ELECTRICAL CHARACTERISTICS
(Input t
r
= t
f
= 6.0 ns)
T
A
= 25_C
Symbol
t
PLH
,
t
PHL
Parameter
Maximum
Propagation Delay,
Input A or B to Y
Test Conditions
V
CC
= 5.0 V
V
CC
= 2.0 V
V
CC
= 3.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
CC
= 5.0 V
V
CC
= 2.0 V
V
CC
= 3.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
C
L
= 15 pF
C
L
= 50 pF
Min
Typ
3.5
19
10.5
7.5
6.5
3
25
16
11
9
5
Max
15
100
27
20
17
10
125
35
25
21
10
T
A
v
85_C
Min
Max
20
125
35
25
21
15
155
45
31
26
10
Typical @ 25_C, V
CC
= 5.0 V
C
PD
Power Dissipation Capacitance (Note 6)
10
pF
*55_C
v
T
A
v
125_C
Min
Max
25
155
90
35
26
20
200
60
38
32
10
pF
ns
Unit
ns
t
TLH
,
t
THL
Output Transition
Time
C
L
= 15 pF
C
L
= 50 pF
C
IN
Maximum Input
Capacitance
6. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: I
CC(OPR
)
= C
PD
V
CC
f
in
+ I
CC
. C
PD
is used to determine the no−load dynamic
power consumption; P
D
= C
PD
V
CC2
f
in
+ I
CC
V
CC
.
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3
MC74HC1G00
V
CC
INPUT
A or B 90%
50%
10%
t
f
t
r
V
CC
GND
t
PLH
90%
50%
10%
t
TLH
t
THL
t
PHL
INPUT
C
L*
OUTPUT
OUTPUT Y
*Includes all probe and jig capacitance.
A 1−MHz square input wave is recommended for
propagation delay tests.
Figure 4. Switching Waveforms
Figure 5. Test Circuit
DEVICE ORDERING INFORMATION
Device Nomenclature
Device Order
Number
MC74HC1G00DFT1G
NLV74HC1G00DFT1G*
MC74HC1G00DFT2G
MC
74
HC1G
00
DF
T2
Logic
Circuit
Indicator
MC
Temp
Range
Identifier
74
Device
Function
00
Package
Suffix
DF
Tape and
Reel
Suffix
T1
Package
Type
SC70−5/SC−88A/
SOT−353
(Pb−Free)
SC70−5/SC−88A/
SOT−353
(Pb−Free)
SOT23−5/TSOP−5/
SC59−5
(Pb−Free)
Tape and
Reel Size
†
178 mm (7 in)
3000 Unit
178 mm (7 in)
3000 Unit
178 mm (7 in)
3000 Unit
Technology
HC1G
MC74HC1G00DTT1G
MC
74
HC1G
00
DT
T1
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP
Capable.
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4
MC74HC1G00
PACKAGE DIMENSIONS
SC−88A (SC−70−5/SOT−353)
CASE 419A−02
ISSUE L
A
G
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419A−01 OBSOLETE. NEW STANDARD
419A−02.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
INCHES
MIN
MAX
0.071
0.087
0.045
0.053
0.031
0.043
0.004
0.012
0.026 BSC
---
0.004
0.004
0.010
0.004
0.012
0.008 REF
0.079
0.087
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.80
1.10
0.10
0.30
0.65 BSC
---
0.10
0.10
0.25
0.10
0.30
0.20 REF
2.00
2.20
5
4
S
1
2
3
−B−
D
5 PL
0.2 (0.008)
M
B
M
N
J
C
DIM
A
B
C
D
G
H
J
K
N
S
H
K
SOLDER FOOTPRINT
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
mm
inches
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5
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