GS8550xU
New Product
Vishay Semiconductors
formerly General Semiconductor
Small Signal Transistor (PNP)
TO-226AA (TO-92)
0.181 (4.6)
min. 0.492 (12.5) 0.181 (4.6)
0.142 (3.6)
Features
•
PNP Silicon Epitaxial Planar Transistors for amplifier
applications. Especially suitable for low power output
stages such as portable radios in class-B push-pull
operation.
• Complementary to GS8050xU
• The “x” in the part number can be B, C or D, depending
on the current gain.
Mechanical Data
Case:
TO-92 Plastic Package
Weight:
approx. 0.18g
Packaging Codes/Options:
E6/Bulk – 5K per container, 20K per box
E7/4K per Ammo mag., 20K per box
max.
∅
0.022 (0.55)
0.098 (2.5)
Bottom
View
Dimensions in inches and (millimeters)
Maximum Ratings & Thermal Characteristics
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation at T
amb
= 25°C
Thermal Resistance Junction to Ambient Air
Junction Temperature
Storage Temperature Range
Ratings at 25°C ambient temperature unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
R
θJA
T
j
T
S
Value
–40
–25
–6
–800
625
(1)
200
(1)
150
–55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
°C
Note:
(1) Valid provided that leads are kept at ambient temperature at a distance of 2mm from case
Document Number 88194
10-May-02
www.vishay.com
1
GS8550xU
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
(T
Parameter
DC Current Gain
Current Gain Group B
C
D
J
= 25°C unless otherwise noted)
Symbol
Test Condition
V
CE
= –1V, I
C
= –5mA
V
CE
= –1V, I
C
= –100mA
Min
45
85
120
160
—
–25
–40
–6
—
—
—
—
—
—
—
Typ
135
—
—
—
30
—
—
—
—
—
–0.51
–1.25
–0.66
15
100
Max
—
160
200
300
—
—
—
—
–100
–100
—
—
–1.0
—
—
Unit
h
FE
V
CE
= –1V, I
C
= –800mA
—
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter ON Voltage
Output Capacitance
Gain-Bandwidth Product
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
C
OB
ƒ
T
I
C
= –2mA, I
B
= 0
I
C
= –100µA, I
E
= 0
I
E
= –100µA, I
C
= 0
V
CB
= –35V, I
E
= 0
V
EB
= –6V, I
C
= 0
I
C
= –800mA, I
B
= –80mA
I
C
= –800mA, I
B
= –80mA
V
CE
= –1V, I
C
= –10mA
V
CB
= –10V, I
E
= 0
ƒ = 1 MHz
V
CE
= –10V, I
C
= –50mA
V
V
V
nA
nA
V
V
V
pF
MHz
www.vishay.com
2
Document Number 88194
10-May-02
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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