GS8550xU
Small Signal Transistor (PNP)
TO-226AA (TO-92)
0.181 (4.6)
min. 0.492 (12.5) 0.181 (4.6)
0.142 (3.6)
ct
odu
Pr
ew
N
Features
•
PNP Silicon Epitaxial Planar Transistors for amplifier
applications. Especially suitable for low power output
stages such as portable radios in class-B push-pull
operation.
• Complementary to GS8050xU
• The “x” in the part number can be B, C or D, depending
on the current gain.
Mechanical Data
Case:
TO-92 Plastic Package
Weight:
approx. 0.18g
Packaging Codes/Options:
E6/Bulk – 5K per container, 20K per box
E7/4K per Ammo mag., 20K per box
max.
∅
0.022 (0.55)
0.098 (2.5)
Bottom
View
Dimensions in inches and (millimeters)
Maximum Ratings & Thermal Characteristics
fied
Ratings at 25°C ambient temperature unless otherwise speci-
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation at T
amb
= 25°C
Thermal Resistance Junction to Ambient Air
Junction Temperature
Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
R
θJA
T
j
T
S
Value
–40
–25
–6
–800
625
(1)
200
(1)
150
–55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
°C
Note:
(1) Valid provided that leads are kept at ambient temperature at a distance of 2mm from case
10/5/01
GS8550xU
Small Signal Transistors (PNP)
Electrical Characteristics
(T
Parameter
DC Current Gain
Current Gain Group B
C
D
J
= 25°C unless otherwise noted)
Symbol
Test Condition
V
CE
= –1V, I
C
= –5mA
V
CE
= –1V, I
C
= –100mA
Min
45
85
120
160
—
–25
–40
–6
—
—
—
—
—
—
—
Typ
135
—
—
—
30
—
—
—
—
—
–0.51
–1.25
–0.66
15
100
Max
—
160
200
300
—
—
—
—
–100
–100
—
—
–1.0
—
—
Unit
h
FE
V
CE
= –1V, I
C
= –800mA
—
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter ON Voltage
Output Capacitance
Gain-Bandwidth Product
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
C
OB
ƒ
T
I
C
= –2mA, I
B
= 0
I
C
= –100µA, I
E
= 0
I
E
= –100µA, I
C
= 0
V
CB
= –35V, I
E
= 0
V
EB
= –6V, I
C
= 0
I
C
= –800mA, I
B
= –80mA
I
C
= –800mA, I
B
= –80mA
V
CE
= –1V, I
C
= –10mA
V
CB
= –10V, I
E
= 0
ƒ = 1 MHz
V
CE
= –10V, I
C
= –50mA
V
V
V
nA
nA
V
V
V
pF
MHz
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