AOT410L/AOB410L
100V N-Channel MOSFET
SDMOS
TM
General Description
The AOT410L/AOB410L is fabricated with SDMOS
trench technology that combines excellent R
DS(ON)
with
low gate charge & low Q
rr
.The result is outstanding
efficiency with controlled switching behavior. This
universal technology is well suited for PWM, load
switching and general purpose applications.
TM
Product Summary
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
= 7V)
100V
150A
< 6.5mΩ
< 7.5mΩ
100% UIS Tested
100% R
g
Tested
TO220
Top View
Bottom View
Top View
D
TO-263
D
2
PAK
Bottom View
D
D
D
D
G
S
G
AOB410L
S
G
G
S
G
AOT410L
D
S
SD
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
Avalanche energy L=0.1mH
T
C
=25°
C
Power Dissipation
Power Dissipation
B
C
C
Maximum
100
±25
150
108
405
12
10
50
125
333
167
1.9
1.2
-55 to 175
Units
V
V
A
V
GS
T
C
=25°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
DSM
I
AS
,I
AR
E
AS
,E
AR
P
D
P
DSM
T
J
, T
STG
A
A
mJ
W
W
°
C
T
C
=100°
C
C
T
A
=25°
T
A
=70°
C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
12
54
0.35
Max
15
65
0.45
Units
°
C/W
°
C/W
°
C/W
Rev.2. 0: August 2013
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Page 1 of 7
AOT410L/AOB410L
Electrical Characteristics (T
J
=25° unless otherwise noted)
C
Symbol
Parameter
Conditions
I
D
=250µA, V
GS
=0V
V
DS
=100V, V
GS
=0V
C
T
J
=55°
V
DS
=0V, V
GS
=±25V
V
DS
=5V
,
I
D
=250µA
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=20A
T0220
V
GS
=7V, I
D
=20A
T0220
V
GS
=10V, I
D
=20A
TO263
V
GS
=7V, I
D
=20A
TO263
V
DS
=5V, I
D
=20A
I
S
=1A,V
GS
=0V
T
J
=125°
C
2
3
405
5.1
8.8
5.8
4.8
5.5
70
0.63
6.5
11
7.5
6.2
7.2
1
150
5290
V
GS
=0V, V
DS
=50V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
415
130
0.3
85
V
GS
=10V, V
DS
=50V, I
D
=20A
23
24
V
GS
=10V, V
DS
=50V, R
L
=2.5Ω,
R
GEN
=3Ω
I
F
=20A, dI/dt=500A/µs
1in
2
Min
100
Typ
Max
Units
V
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BV
DSS
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
10
50
±100
4
µA
nA
V
A
mΩ
R
DS(ON)
Static Drain-Source On-Resistance
mΩ
mΩ
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
Maximum Body-Diode Continuous Current
6622
594
215
0.64
107
28.5
40
28
22
43.5
14.5
19
124
27
177
DYNAMIC PARAMETERS
Input Capacitance
C
iss
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
7950
770
300
1
129
34
56
SWITCHING PARAMETERS
Q
g
(10V) Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=20A, dI/dt=500A/µs
35
230
ns
nC
A. The value of R
θJA
is measured with the device mounted on
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P
D
is based on T
J(MAX)
=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175°C. Ratings are based on low frequency and duty cycles to keep
initial T
J
=25°C.
D. The R
θJA
is the sum of the thermal impedence from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
J(MAX)
=175°C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2. 0: August 2013
www.aosmd.com
Page 2 of 7
AOT410L/AOB410L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
150
10V
6.5V
120
7V
90
I
D
(A)
I
D
(A)
90
60
30
V
GS
=5V
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
8
7
R
DS(ON)
(mΩ)
Ω
6
5
4
3
0
15
20
25
30
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
5
10
V
GS
=7V
Normalized On-Resistance
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0
V
GS
=10V
I
D
=20A
30
0
3
5
6
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
4
7
6V
150
120
V
DS
=5V
180
60
5.5V
125°C
25°C
17
5
2
V
GS
=7V
10
I
D
=20A
V
GS
=10V
0
Temperature (°C)
18
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
25
50
75
100
125
150
175
200
12
I
D
=20A
1.0E+02
1.0E+01
10
R
DS(ON)
(mΩ)
Ω
125°C
I
S
(A)
40
1.0E+00
1.0E-01
1.0E-02
125°C
25°C
8
6
25°C
1.0E-03
4
5
6
7
8
9
10
1.0E-04
0.0
0.2
0.4
0.6
0.8
1.0
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
Rev.2. 0: August 2013
www.aosmd.com
Page 3 of 7
AOT410L/AOB410L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=50V
I
D
=20A
8
Capacitance (pF)
8000
C
iss
6000
10000
V
GS
(Volts)
6
4
4000
C
oss
2000
C
rss
2
0
0
60
80
100
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
20
40
120
0
0
30
40
50
V
DS
(Volts)
Figure 8: Capacitance Characteristics
10
20
60
1000.0
10µs
100.0
I
D
(Amps)
10.0
DC
1.0
0.1
0.0
0.01
0.1
1
10
V
DS
(Volts)
100
1000
T
J(Max)
=175°C
T
C
=25°C
R
DS(ON)
limited
10µs
100µs
Power (W)
1ms
10ms
5000
4000
3000
2000
1000
0
0.00001 0.0001
10
0
1
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
0.001
0.01
0.1
T
J(Max)
=175°C
T
C
=25°C
17
5
2
10
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
1
R
θJC
=0.45°C/W
40
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
Single Pulse
0.01
P
D
T
on
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.2. 0: August 2013
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Page 4 of 7
AOT410L/AOB410L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000.0
I
AR
(A) Peak Avalanche Current
350
300
T
A
=25°C
100.0
T
A
=150°C
10.0
T
A
=125°C
T
A
=100°C
Power Dissipation (W)
250
200
150
100
50
1.0
10
100
1000
Time in avalanche, t
A
(µs)
µ
Figure 12: Single Pulse Avalanche capability (Note C)
1
0
0
75
100
125
150
T
CASE
(°C)
°
Figure 13: Power De-rating (Note F)
25
50
175
160
1000
T
A
=25°C
Current rating I
D
(A)
120
Power (W)
100
80
10
17
5
2
10
40
1
0
0
25
50
75
100
125
150
175
T
CASE
(°C)
°
Figure 14: Current De-rating (Note F)
0.0001
0.01
1
100
10000
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
0
Pulse Width (s)
18
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
1
R
θJA
=65°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
P
D
0.01
Single Pulse
T
on
T
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.2. 0: August 2013
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Page 5 of 7
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