1SMA4741 thru 1SMA200Z
SURFACE MOUNT SILICON ZENDER DIODE
PRODUCT SUMMARY
1.0 Watts Surface Mount
FEATURES
For surface mounted applications in order to
optimize board space
Low profile package
Built-in strain relief
Glass passivated junction
Low inductance
Typical IR less than 5.0uA above 11V
High temperature soldering guaranteed:
260°C / 10 seconds at terminals
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
SMA/DO-214AC
MECANICAL DATA
Case: Molded plastic over passivated junction
Terminals: Pure tin plated lead free,
solderable per MIL-STD-750, Method 2025
Polarity:Color Band denotes positive end
(cathode)
Standard packaging: 12mm tape (EIA-481)
Weight: 0.002 ounces, 0.064 gram
Dimensions in inches and (millimeters)
Pb-free; RoHS-compliant
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
o
(Ratings at 25 C ambient temperature unless otherwise specified.)
Type Number
Peak Power Dissipation at T
A
=50 C, Derate above
o
50 C ( Note 1 )
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load
(JEDEC method) ( Note 2 )
o
Symbol
P
D
I
FSM
Value
1.0
6.67
10.0
Units
Watts
mW/
o
C
Amps
o
Operating and Storage Temperature Range
T
J
, T
STG
-55 to + 150
C
2
1. Mounted on 5.0mm (0.013mm thick) land areas.
Notes:
2. Measured on 8.3ms Single Half Sine-wave or Equivalent Square Wave, Duty Cycle=4 Pulses Per
Minute Maximum
08/22/2007 Rev.1.00
www.SiliconStandard.com
1
1SMA4741 thru 1SMA200Z
ELECTRICAL CHARACTERISTICS
o
(TA=25 C unless otherwise noted) VF=1.2V max, IF=200mA for all types.
Device
(Note 1)
1SMA4741
1SMA4742
1SMA4743
1SMA4744
1SMA4745
1SMA4746
1SMA4747
1SMA4748
1SMA4749
1SMA4750
1SMA4751
1SMA4752
1SMA4753
1SMA4754
1SMA4755
1SMA4756
1SMA4757
1SMA4758
1SMA4759
1SMA4760
1SMA4761
1SMA4762
1SMA4763
1SMA4764
1SMA110Z
1SMA120Z
1SMA130Z
1SMA150Z
1SMA160Z
1SMA180Z
1SMA200Z
Device
Marking
Code
741A
742A
743A
744A
745A
746A
747A
748A
749A
750A
751A
752A
753A
754A
755A
756A
757A
758A
759A
760A
761A
762A
763A
764A
110A
120A
130A
150A
160A
180A
200A
Nominal Zener Voltage
Test
V
z
@ I
zt
Voltage
(Notes 2 & 3)
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
160
180
200
Current
I
ZT
mA
23
21
19
17
15.5
14.0
12.5
11.5
10.5
9.5
8.5
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.7
3.3
3.0
2.8
2.5
2.3
2.0
1.9
1.7
1.6
1.4
1.2
Maximum Zener Impedance (Note 4)
Leakage Current
Z
ZT @
I
ZT
Ohms
8
9
10
14
16
20
22
23
25
35
40
45
50
60
70
80
95
110
125
150
175
200
250
350
450
550
700
1000
1100
1200
1500
Z
ZK @ IZK
Ohms
mA
700
700
700
700
700
750
750
750
750
750
1000
1000
1000
1000
1500
1500
1500
2000
2000
2000
2000
3000
3000
3000
4000
4500
5000
6000
6500
7000
8000
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
I
R @ VR
uA Max Volts
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
8.4
9.1
9.9
11.4
12.2
13.7
15.2
16.7
18.2
20.6
22.8
25.1
27.4
29.7
32.7
35.8
38.8
42.6
47.1
51.7
56.0
62.2
69.2
76.0
83.6
91.2
98.8
114.0
121.6
136.8
152.0
Surge Current @
O
T
A
= 25 C
Ir - mA
(Note 5)
414
380
344
304
285
250
225
205
190
170
150
135
125
115
110
95
90
80
70
65
60
55
50
45
-
-
-
-
-
-
-
Notes:
1. Tolerance and Type Number Designation. The type numbers listed have a standard tolerance
on the nominal zener voltage of ±5%.
2. Specials Available Include:
A. Nominal zener voltages between the voltages shown and tighter voltage tolerances.
B. Matched sets.
3. Zener Voltage (VZ) Measurement. Guarantees the zener voltage when messured at 90 seconds while
o
C± 1
o
maintaining the lead temperature (TL) at 30 C± 1 C, from the diode body.
4. Zener Impedance (ZZ) Derivation. The zener impedance is derived from the 60 cycle ac voltage,
which results when an ac current having and rms value equal to 10% of the dc
zener current (IZT or IZK) is superimposed on IZT or IZK.
5. Surge Current (Ir) Non-Repetitive. The rating listed in the electrical characteristics table is maximum peak,
non-repetitive, reverse surge current of 1/2 square wave or equivalent sine wave pulse of 1/120 second
duration superimposed on the test current, IZT, per JEDEC registration; however, actual device capability
is as described in Figure 10.
08/22/2007 Rev.1.00
www.SiliconStandard.com
2
1SMA4741 thru 1SMA200Z
RATINGS ANAD CHARACTERISTIC CURVES
(1SMA4741 THRU 1SMA200Z)
FIG.1- POWER TEMPERATURE DERATING CURVE
P
D
,
MAXIMUM POWER DISSIPATION (WATTS)
FIG.2- TYPICAL FORWARD CHARACTERISTICS
1000
500
IF, FORWARD CURRENT (mA)
1.25
MINIMUM
MAXIMUM
1.0
200
100
50
20
10
5
2
o
0.75
0.50
70 C
150 C
25 C
0 C
o
o
o
0.25
0
0
20
40
60
80
100
120
140
o
1
160
180
200
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
AMBIENT TEMPERATURE( C)
V
F
,
FORWARD VOLTAGE (VOLTS)
FIG.3- EFFECT OF ZENER CURRENT
ON ZENER IMPEDANCE
1000
Z
Z
, DYNAMIC IMPEDANCE (OHMS)
FIG.5- TYPICAL LEAKAGE CURRENT
o
500
200
100
50
T
J
= 25 C
I
Z
(rms)= 0.1 I
Z
(dc)
f = 1KHz
47V
10000
7000
5000
2000
1000
700
500
200
100
70
50
IR, LEAKAGE CURRENT ( A)
TYPICAL LEAKAGE CURRENT
AT 80% OF NOMINAL
BREAKDOWN VOLTAGE
27V
20
10
5
2
1
0.1
0.2
0.5
1
2
5
10
20
50
100
I
Z
,
ZENER CURRENT (mA)
0.8V
20
10
7
5
2
1
0.7
0.5
FIG.4- EFFECT OF ZENER VOLTAGE
ON ZENER IMPEDANCE
Z
Z
, DYNAMIC IMPEDANCE (OHMS)
1000
700
500
200
100
70
50
20
10
7
5
2
1
1
2
3
5
7
I
Z
= 1.0mA
5.0mA
20mA
T
J
= 25 C
I
Z
(rms)= 0.1 I
Z
(dc)
f = 1KHz
o
+125 C
0.2
0.1
0.07
0.05
0.02
0.01
0.007
0.005
0.002
0.001
3
4
5
6
7
8
9
10
11
12
13
14
15
o
+25 C
o
10
20
30
50 70 100
I
Z
,
ZENER CURRENT (mA)
V
Z
,
NOMINAL ZENER VOLTAGE (VOLTS)
08/22/2007 Rev.1.00
www.SiliconStandard.com
3
1SMA4741 thru 1SMA200Z
RATINGS ANAD CHARACTERISTIC CURVES
(1SMA4741 THRU 1SMA200Z)
FIG.6- TYPICAL CAPACITANCE versus Vz
400
300
200
C, CAPACITANCE (pF)
FIG.7- TEMPERATURE COEFFICIENTS
a-RANGE FOR UNITS TO 12 VOLTS
OV
Z
, TEMPERAYURE COEFFICIENT (mV/
o
C)
+12
+10
+8.0
+6.0
+4.0
+2.0
0
-2.0
-4.0
2
3
4
5
6
7
8
9
10
11
12
V
Z
, ZENER VOLTAGE (VOLTS)
100
0V BIAS
1.0V BIAS
10
8
4
1
RANGE
V
Z
@ I
ZT
50% OF BREAKDOWN BIAS
10
V
Z
, FORWARD VOLTAGE (VOLTS)
100
FIG.8- TEMPERATURE COEFFICIENTS
b-RANGE FOR UNITS 11 TO 100 VOLTS
FIG.9- EFFECT OF ZENER CURRENT
OV
Z
, TEMPERAYURE COEFFICIENT (mV/
o
C)
OV
Z
, TEMPERAYURE COEFFICIENT (mV/
o
C)
100
70
50
30
20
10
7
5
3
2
1
10
20
30
50
70
100
V
Z
, ZENER VOLTAGE (VOLTS)
+6.0
+4.0
V
Z
@ I
ZT
TJ=25
o
C
+2.0
RANGE
V
Z
@ I
ZT
20mA
0
0.01mA
1.0mA
NOTE: BELOW 3 VOLTS AND ABOVE a VOLTS
CHANGES IN ZENER CURRENT OO NOT
AFFECT TEMPERATURE COEFFICIENTS
-2.0
-4.0
3
4
5
6
7
8
V
Z
, ZENER VOLTAGE (VOLTS)
FIG.10- MAXIMUM SURGE POWER
Ppk, PEAK SURGE POWER IWATTSO
100
70
50
30
20
10
7
5
3
2
1
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
20
50
100
200
500
1000
PW, PULSE WIDTH (ms)
0.8V
-10V
NON
11V
-9
-RE
PET
ITIV
E
1V N
ON-
REP
5% D
UTY C
YCLE
ETIT
IVE
RECTANGULAR
WAVEFORM
o
TJ = 25 C PRIOR TO
INITIAL PULSE
10% DUT
Y
CYCLE
20% DUTY CYCLE
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
08/22/2007 Rev.1.00
www.SiliconStandard.com
4
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