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CY7C1360C-200AJXCT

产品描述QDR SRAM, 256KX36, 3ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, PLASTIC, MS-026, TQFP-100
产品类别存储    存储   
文件大小925KB,共38页
制造商Cypress(赛普拉斯)
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CY7C1360C-200AJXCT概述

QDR SRAM, 256KX36, 3ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, PLASTIC, MS-026, TQFP-100

CY7C1360C-200AJXCT规格参数

参数名称属性值
零件包装代码QFP
包装说明LQFP,
针数100
Reach Compliance Codeunknown
ECCN代码3A991.B.2.A
Is SamacsysN
最长访问时间3 ns
其他特性PIPELINED ARCHITECTURE
JESD-30 代码R-PQFP-G100
JESD-609代码e3/e4
长度20 mm
内存密度9437184 bit
内存集成电路类型QDR SRAM
内存宽度36
功能数量1
端子数量100
字数262144 words
字数代码256000
工作模式SYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织256KX36
封装主体材料PLASTIC/EPOXY
封装代码LQFP
封装形状RECTANGULAR
封装形式FLATPACK, LOW PROFILE
并行/串行PARALLEL
认证状态Not Qualified
座面最大高度1.6 mm
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)3.135 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子面层MATTE TIN/NICKEL PALLADIUM GOLD
端子形式GULL WING
端子节距0.65 mm
端子位置QUAD
宽度14 mm
Base Number Matches1

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CY7C1360C
CY7C1362C
9-Mbit (256K × 36/512K × 18)
Pipelined SRAM
9-Mbit (256K × 36/512K × 18) Pipelined SRAM
Features
Functional Description
The CY7C1360C/CY7C1362C SRAM integrates 256K × 36 and
512K × 18 SRAM cells with advanced synchronous peripheral
circuitry and a two-bit counter for internal burst operation. All
synchronous inputs are gated by registers controlled by a
positive-edge-triggered clock input (CLK). The synchronous
inputs include all addresses, all data inputs, address-pipelining
chip enable (CE
1
), depth-expansion chip enables (CE
2
and
CE
3[1]
), burst control inputs (ADSC, ADSP, and ADV), write
enables (BW
X
, and BWE), and global write (GW). Asynchronous
inputs include the output enable (OE) and the ZZ pin.
Addresses and chip enables are registered at the rising edge of
clock when either address strobe processor (ADSP) or address
strobe controller (ADSC) are active. Subsequent burst
addresses can be internally generated as controlled by the
advance pin (ADV).
Address, data inputs, and write controls are registered on-chip
to initiate a self-timed write cycle.This part supports byte write
operations (see
Pin Definitions on page 8
and
Truth Table on
page 11
for further details). Write cycles can be one to two or four
bytes wide as controlled by the byte write control inputs. GW
when active LOW causes all bytes to be written.
The CY7C1360C/CY7C1362C operate from a +3.3 V core power
supply while all outputs may operate with either a +2.5 or +3.3 V
supply. All inputs and outputs are JEDEC-standard
JESD8-5-compatible.
For a complete list of related documentation, click
here.
Supports bus operation up to 200 MHz
Available speed grades: 200 MHz, and 166 MHz
Registered inputs and outputs for pipelined operation
3.3 V core power supply (V
DD
)
2.5 V/3.3 V I/O operation (V
DDQ
)
Fast clock-to-output times
3.0 ns (for 200 MHz device)
Provide high performance 3-1-1-1 access rate
User selectable burst counter supporting Intel
Pentium
®
interleaved or linear burst sequences
Separate processor and controller address strobes
Synchronous self-timed writes
Asynchronous output enable
Single cycle chip deselect
Available in Pb-free 100-pin TQFP package, non Pb-free
119-ball BGA package, and 165-ball FBGA package
TQFP available with 3-chip enable and 2-chip enable
IEEE 1149.1 JTAG-compatible boundary scan
Selection Guide
Description
Maximum access time
Maximum operating current
Maximum CMOS standby current
200 MHz
3.0
220
40
166 MHz
3.5
180
40
Unit
ns
mA
mA
Note
1. CE
3
is for A version of TQFP (3 Chip Enable option) and 165-ball FBGA package only. 119-ball BGA is offered only in 2 Chip Enable.
Cypress Semiconductor Corporation
Document Number: 38-05540 Rev. *S
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised January 11, 2018
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