DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D102
BC846W; BC847W; BC848W
NPN general purpose transistors
Product specification
Supersedes data of 1999 Apr 23
2002 Feb 04
Philips Semiconductors
Product specification
NPN general purpose transistors
FEATURES
•
Low current (max. 100 mA)
•
Low voltage (max. 65 V).
APPLICATIONS
•
General purpose switching and amplification.
DESCRIPTION
NPN transistor in a SOT323 plastic package.
PNP complements: BC856W, BC857W and BC858W.
MARKING
PINNING
BC846W; BC847W; BC848W
PIN
1
2
3
base
emitter
collector
DESCRIPTION
handbook, halfpage
3
3
1
TYPE NUMBER
BC846W
BC846AW
BC846BW
BC847W
BC847AW
BC847BW
BC847CW
BC848W
Note
1. * = -: made in Hong Kong.
* = t: made in Malaysia.
MARKING
CODE
(1)
2
1
Top view
2
MAM062
1D*
1A*
1B*
1H*
1E*
1F*
1G*
1M*
Fig.1
Simplified outline (SOT323; SC70) and
symbol.
2002 Feb 04
2
Philips Semiconductors
Product specification
NPN general purpose transistors
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
V
CBO
BC846W
BC847W
BC848W
V
CEO
collector-emitter voltage
BC846W
BC847W
BC848W
V
EBO
emitter-base voltage
BC846W; BC847W
BC848W
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
thermal resistance from junction to
ambient
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open collector
open base
PARAMETER
collector-base voltage
BC846W; BC847W; BC848W
CONDITIONS
open emitter
−
−
−
−
−
−
−
−
−
−
−
T
amb
≤
25
°C;
note 1
−
MIN.
MAX.
80
50
30
65
45
30
6
5
100
200
200
200
+150
150
+150
V
V
V
V
V
V
V
V
UNIT
mA
mA
mA
mW
°C
°C
°C
−65
−
−65
CONDITIONS
in free air; note 1
VALUE
625
UNIT
K/W
2002 Feb 04
3
Philips Semiconductors
Product specification
NPN general purpose transistors
CHARACTERISTICS
T
amb
= 25
°C;
unless otherwise specified.
SYMBOL
I
CBO
PARAMETER
collector-base cut-off current
BC846W; BC847W; BC848W
CONDITIONS
V
CB
= 30 V; I
E
= 0
V
CB
= 30 V; I
E
= 0;
T
j
= 150
°C
MIN.
−
−
−
−
−
−
TYP.
−
−
−
90
150
270
−
−
180
290
520
90
200
700
900
660
−
−
−
−
MAX.
15
5
100
−
−
−
450
800
220
450
800
250
600
−
−
700
770
3
−
10
UNIT
nA
µA
nA
I
EBO
h
FE
emitter-base cut-off current
DC current gain
BC846AW; BC847AW
BC846BW; BC847BW; BC848BW
BC847CW
DC current gain
BC846W
BC847W; BC848W
BC846AW; BC847AW
BC846BW; BC847BW
BC847CW
V
EB
= 5 V; I
C
= 0
I
C
= 10
µA;
V
CE
= 5 V
I
C
= 2 mA; V
CE
= 5 V
110
110
110
200
420
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 100 mA; I
B
= 5 mA;
note 1
−
−
−
−
580
−
−
100
−
V
CEsat
collector-emitter saturation voltage
mV
mV
mV
mV
mV
mV
pF
MHz
dB
V
BEsat
base-emitter saturation voltage
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 100 mA; I
B
= 5 mA;
note 1
V
BE
C
c
f
T
F
base-emitter voltage
collector capacitance
transition frequency
noise figure
I
C
= 2 mA; V
CE
= 5 V
I
C
= 10 mA; V
CE
= 5 V
V
CB
= 10 V; I
E
= I
e
= 0;
f = 1 MHz
V
CE
= 5 V; I
C
= 10 mA;
f = 100 MHz
I
C
= 200
µA;
V
CE
= 5 V;
R
S
= 2 kΩ; f = 1 kHz;
B = 200 Hz
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
2002 Feb 04
4
Philips Semiconductors
Product specification
NPN general purpose transistors
BC846W; BC847W; BC848W
handbook, halfpage
400
MGT723
hFE
(1)
1200
handbook, halfpage
VBE
(mV)
1000
(1)
MGT724
300
800
(2)
200
(2)
600
(3)
(3)
400
100
200
0
10
−1
1
10
10
2
I C (mA)
10
3
0
10
−1
1
10
10
2
I C (mA)
10
3
BC847AW;
V
CE
= 5 V.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
BC847AW;
V
CE
= 5 V.
(1) T
amb
=
−55 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 150
°C.
Fig.2
DC current gain as a function of collector
current; typical values.
Fig.3
Base-emitter voltage as a function of
collector current; typical values.
10
3
handbook, halfpage
VCEsat
(mV)
MGT725
handbook, halfpage
1200
VBEsat
(mV)
1000
MGT726
(1)
800
(2)
10
2
(1)
(2)
(3)
600
(3)
400
200
10
10
−1
1
10
10
2
I C (mA)
10
3
0
10
−1
1
10
10
2
I C (mA)
10
3
BC847AW;
I
C
/I
B
= 20.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
BC847AW;
I
C
/I
B
= 10.
(1) T
amb
=
−55 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 150
°C.
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.5
Base-emitter saturation voltage as a
function of collector current; typical values.
2002 Feb 04
5
MEMS传感器
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