1N5221B - 1N5263B
Taiwan Semiconductor
Small Signal Product
0.5W Hermetically Sealed Glass Zener Diodes
FEATURES
- Zener voltage range 2.4 to 56 volts
- DO-35 package (JEDEC)
- Through-hole device type mounting
- Hemetically sealed glass
- Compression bonded construction
- All extermal surfaces are corrosion
resistant and leads are readily solderable
- ROHS complaint
- Solder hot dip Tin(Sn) lead finish
- Cathode indicated by polarity band
DO-35
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Power dissipation
Forward Voltage @I
F
=200mA
Operating and Storage Temperature Range
SYMB
OL
P
D
V
F
T
J
, T
STG
VALUE
500
1.1
-65 to +200
UNITS
mW
V
o
C
Document Number：DS_S1401002
Version : C14
1N5221B - 1N5263B
Taiwan Semiconductor
Small Signal Product
ORDERING INFORMATION
PART NO.
PACKING CODE
GREEN COMPOUND
CODE
1N5221B
1N5221B
R0
A0
Suffix "G"
Suffix "G"
DO-35 (DB3 series)
DO-35 (DB3 series)
5K / 14" Reel
5K (Ammo Box)
PACKAGE
PACKING
MANUFACTURE
CODE
(Note)
(Note)
Note: Manufacture special control, if empty means no special control requirement.
EXAMPLE
PREFERRED P/N
1N5221B R0G
1N5221B R0G
1N5221B A0G
1N5221B A0G
PART NO.
1N5221B
1N5221B
1N5221B
1N5221B
PACKING CODE
R0
R0
A0
A0
GREEN COMPOUND MANUFACTURE
CODE
CODE
G
G
G
G
L0
B0
L0
B0
DESCRIPTION
Green compound
Green compound
Green compound
Green compound
RATINGS AND CHARACTERISTICS CURVES (1N5221B - 1N5263B)
(TA=25℃ unless otherwise noted)
1.3
V
Ztn
- Relative Voltage Change
500
R
thJA
- Therm. Resist. Junction Ambient
(K/W)
400
300
200
100
0
0
5
10
15
20
I - Lead Length (mm)
1.2
1.1
1.0
0.9
0.8
-60
0
60
120
180
240
T
j
- Junction Temperature (°C)
V
Ztn
= V
Zt
/V
Z
(25
°C)
TK
VZ
= 10 x 10
-
8 x 10
-4
/K
6 x 10
-
4 x 10
-
2 x 10
-
4
/K
0
- 2 x 10
-
- 4 x 10
-
Fig. 3 Typical Change of Working Voltage VS. Junction
Fig. 1 Thermal Resistance VS. Lead Length
1000
600
500
Ptot - Total Power Dissipation (mW)
V
Z
- Voltage Change (mV)
T
j
= 25
o
C
100
I
Z
= 5 mA
400
300
200
100
0
0
40
80
120
160
200
T
amb
- Ambient Temperature (°C)
10
1
0
5
10
15
20
25
V
Z
- Z-Voltage (V)
Fig. 2 Typical Change of Working Voltage under Operating
Conditions at T
amb
= 25
o
C
Fig.4 Total Power Dissipation VS. Ambient Temperature
Document Number：DS_S1401002
Version : C14
1N5221B - 1N5263B
Taiwan Semiconductor
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES (1N5221B - 1N5263B)
15
TK
VZ
- Temperature Coefficient of V
Z
(10
-4
/K)
100
80
I
Z
- Z-Current (mA)
60
40
20
P
tot
= 500
T
amb
= 25
o
C
10
5
I
Z
= 5 mA
0
-5
0
10
20
30
40
50
V
Z
- Z-Voltage (V)
Fig. 5 Temperature Coefficient of Vz VS. Z-Voltage
0
0
2
4
6
8
10
V
Z
- Z-Voltage (V)
Fig.8 Z-Current VS. Z-Voltage
200
50
40
I
Z
- Z-Current (mA)
30
20
10
C
D
- Diode Capacitance (pF)
150
V
R
= 2 V
T
j
= 25
o
C
P
tot
= 500 mW
T
amb
= 25
°C
100
50
0
0
5
10
15
20
25
V
Z
- Z-Voltage (V)
0
15
20
25
V
Z
- Z-Voltage (V)
30
35
Fig.6 Diode Capacitance VS. Z-Voltage
Fig. 9 Z-Current VS. Z-Voltage
100
10
I
F
- Forward Current (mA)
1
0.1
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
V
F
- Forward Voltage (V)
Figure 7. Forward Current VS. Forward Voltage
1000
I
Z
= 1 mA
r
Z
- Differiential Z-Resistance (Ω)
100
5 mA
10
T
j
= 25
o
C
1
0
10 mA
5
10
15
20
25
T
j
= 25
o
C
Fig.10 Differential Z-Resistance VS. Z-Voltage
V
Z
- Z-Voltage (V)
Document Number：DS_S1401002
Version : C14
1N5221B - 1N5263B
Taiwan Semiconductor
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES (1N5221B - 1N5263B)
Z
thp
–The rmal Resistance for Pulse Cond. (KW)
1000
t
p
/T = 0.5
100
t
p
/T = 0.2
Single Pulse
tp/T = 0.01
10
t
p
/T = 0.1
t
p
/T = 0.05
tp/T = 0.02
R
thJA
= 300 K/W
T = T
jmax
–T
amb
i
ZM
= (–VZ +(VZ
2
+ 4r
zj
x T/Z
thp
)
1
0.1
1.0
10.0
t
p
– Pulse Length (ms)
1 / 2
)
/(2r
zj
)
100.0
1000.0
Fig. 11 Thermal Response
Document Number：DS_S1401002
Version : C14
1N5221B - 1N5263B
Taiwan Semiconductor
Small Signal Product
Electrical Characteristics (Ratings at T
A
= 25
o
C ambient temperature unless otherwise specified)
Z
ZT
@ I
ZT
Z
ZK
@I
ZK
=0.25mA
I
R
@ V
R
Vz @ Izt
Current
V
R
I
ZT
Ω
Ω
μA
Voltage
Nominal
(mA)
Max.
Max.
Max.
(Volts)
1N5221B
2.4
20
30
1200
100
1.0
1N5222B
2.5
20
30
1250
100
1.0
1N5223B
2.7
20
30
1300
75
1.0
1N5224B
2.8
20
30
1400
75
1.0
1N5225B
3.0
20
29
1600
50.0
1.0
1N5226B
3.3
20
28
1600
25.0
1.0
1N5227B
3.6
20
24
1700
15.0
1.0
1N5228B
3.9
20
23
1900
10.0
1.0
1N5229B
4.3
20
22
2000
5.0
1.0
1N5230B
4.7
20
19
1900
5.0
2.0
1N5231B
5.1
20
17
1600
5.0
2.0
1N5232B
5.6
20
11
1600
5.0
3.0
1N5233B
6.0
20
7
1600
5.0
3.5
1N5234B
6.2
20
7
1000
5.0
4.0
1N5235B
6.8
20
5
750
3.0
5.0
1N5236B
7.5
20
6
500
3.0
6.0
1N5237B
8.2
20
8
500
3.0
6.5
1N5238B
8.7
20
8
600
3.0
6.5
1N5239B
9.1
20
10
600
3.0
7.0
1N5240B
10
20
17
600
2.0
8
1N5241B
11
20
22
600
1.0
8.4
1N5242B
12
20
30
600
0.5
9
1N5243B
13
9.5
13
600
0.1
10
1N5244B
14
9.0
15
600
0.1
10
1N5245B
15
8.5
16
600
0.1
11
1N5246B
16
7.8
17
600
0.1
12
1N5247B
17
7.4
19
600
0.1
13
1N5248B
18
7.0
21
600
0.1
14
1N5249B
19
6.6
23
600
0.1
14
1N5250B
20
6.2
25
600
0.1
15
1N5251B
22
5.6
29
600
0.1
17
1N5252B
24
5.2
33
600
0.1
18
1N5253B
25
5.0
35
600
0.1
18
1N5254B
27
4.6
41
600
0.1
21
1N5255B
28
4.5
44
600
0.1
21
1N5256B
30
4.2
49
600
0.1
23
1N5257B
33
3.8
58
700
0.1
25
1N5258B
36
3.4
70
700
0.1
27
1N5259B
39
3.2
80
800
0.1
30
1N5260B
43
3.0
93
900
0.1
33
1N5261B
47
2.7
105
1000
0.1
36
1N5262B
51
2.5
125
1100
0.1
39
1N5263B
56
2.2
150
1300
0.1
43
Notes : 1. The type numbers listed have zener voltage as shown and have a standard tolerance on the nominal
zener voltage of ±5%. Device of ±2% is indicated by a "C" instead of a "B".
2. Nominal zener voltages between the voltages shown and tighter voltage, for detalied information on
price, availability and delivery.
3. The zener voltage(V
Z
) is tested under pulse condition. The measured V
Z
is guaranteed to be within
specification with device junction in thermal equilibrium.
4. Zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having
an RMS value equal to 10% of the dc zener current (I
ZT
) is superimposed to I
ZT
.
Device
Document Number：DS_S1401002
Version : C14
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