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1N2978RBE3

产品描述Zener Diode, 14V V(Z), 5%, 10W, Silicon, Unidirectional, DO-203AA, HERMETIC SEALED, METAL GLASS, DO-4, 1 PIN
产品类别分立半导体    二极管   
文件大小448KB,共8页
制造商Vishay(威世)
官网地址http://www.vishay.com
标准
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1N2978RBE3概述

Zener Diode, 14V V(Z), 5%, 10W, Silicon, Unidirectional, DO-203AA, HERMETIC SEALED, METAL GLASS, DO-4, 1 PIN

1N2978RBE3规格参数

参数名称属性值
是否Rohs认证符合
零件包装代码DO-4
包装说明O-MUPM-D1
针数1
Reach Compliance Codecompliant
ECCN代码EAR99
Is SamacsysN
其他特性PD-CASE
外壳连接CATHODE
配置SINGLE
二极管元件材料SILICON
二极管类型ZENER DIODE
最大动态阻抗3 Ω
JEDEC-95代码DO-203AA
JESD-30 代码O-MUPM-D1
JESD-609代码e3
元件数量1
端子数量1
最高工作温度175 °C
最低工作温度-65 °C
封装主体材料METAL
封装形状ROUND
封装形式POST/STUD MOUNT
峰值回流温度(摄氏度)NOT SPECIFIED
极性UNIDIRECTIONAL
最大功率耗散10 W
标称参考电压14 V
表面贴装NO
技术ZENER
端子面层PURE MATTE TIN OVER NICKEL
端子形式SOLDER LUG
端子位置UPPER
处于峰值回流温度下的最长时间NOT SPECIFIED
最大电压容差5%
工作测试电流180 mA
Base Number Matches1

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1N2970B – 1N3015B and
1N3993A – 1N3998A
Qualified Levels:
JAN, JANTX, and
JANTXV
Available on
commercial
versions
10 Watt Zener Diodes
Qualified per MIL-PRF-19500/124
DESCRIPTION
The JEDEC registered 1N2970B through 1N3015B and 1N3993A through 1N3998A series are
10W Zener diodes with voltage regulation values between 3.9 and 200V. They are available
in JAN, JANTX, and JANTXV military qualification grades on most voltage values.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
Internal solder bond construction.
Hermetically sealed (welded).
Zener regulation voltages from 3.9 V to 200 V.
Standard and reverse polarities are available.
Consult factory for surface mount equivalents.
JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/124.
RoHS compliant devices available by adding “e3” suffix (commercial grade only).
DO-213AA
(DO-4)
Package
APPLICATIONS / BENEFITS
Regulates voltage over a broad range of current and temperature.
Standard voltage tolerances are +/- 5%.
Nonsensitive to ESD per MIL-STD-750 method 1020.
Inherently radiation hard as described in Microsemi
MicroNote 050.
MAXIMUM RATINGS
Parameters/Test Conditions
Junction Temperature
Storage Temperature
Thermal Resistance Junction-to-Case
(1)
Steady-State Power Dissipation @ T
C
= +55 ºC
Forward Voltage @ 2.0 A
Solder Pad Temperature @ 10 s
NOTES:
1. Derate at 0.083 W/ºC above +55 ºC.
Symbol
T
J
T
STG
R
ӨJC
P
D
V
F
T
SP
Value
-65 to +175
-65 to +200
12
10
1.5
260
Unit
o
C
o
C
o
C/W
W
V
ºC
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0075, Rev. 3 (5/24/13)
©2013 Microsemi Corporation
Page 1 of 8

 
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