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10ERB20DG

产品描述Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, PLASTIC, R-1, 2 PIN
产品类别分立半导体    二极管   
文件大小166KB,共2页
制造商Gulf Semiconductor
官网地址http://www.gulfsemi.com/
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10ERB20DG概述

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, PLASTIC, R-1, 2 PIN

10ERB20DG规格参数

参数名称属性值
厂商名称Gulf Semiconductor
包装说明O-PALF-W2
Reach Compliance Codeunknown
ECCN代码EAR99
Is SamacsysN
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
JESD-30 代码O-PALF-W2
元件数量1
端子数量2
最高工作温度150 °C
最低工作温度-55 °C
最大输出电流1 A
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
最大重复峰值反向电压200 V
最大反向恢复时间0.035 µs
表面贴装NO
端子形式WIRE
端子位置AXIAL
Base Number Matches1

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10ERB20DG THRU 10ERB60DG
ULTRAFAST EFFICIENT
GLASS PASSIVATED RECTIFIER
VOLTAGE: 200 TO 600V
CURRENT: 1.0A
FEATURE
Molded case feature for auto insertion
High current capability
Low leakage current
High surge capability
High temperature soldering guaranteed
250°C /10sec/0.375" lead length at 5 lbs tension
Glass Passivated chip
R-1
MECHANICAL DATA
Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
Case: Molded with UL-94 Class V-0 recognized Flame
Retardant Epoxy
Polarity: color band denotes cathode
Mounting position: any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated,
for capacitive load, derate current by 20%)
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Maximum Average Forward Rectified
Current 3/8
"
lead length at Ta =50
°
C
Peak Forward Surge Current 8.3ms single
Half sine-wave superimposed on rated load
Maximum Instantaneous Forward Voltage at
rated forward current
Maximum DC Reverse Current
Ta =25
°
C
at rated DC blocking voltage
Ta =100
°
C
Typical Junction Capacitance
(Note 1)
Maximum Reverse Recovery Time (Note 2)
10ERB20DG
200
140
200
10ERB40DG
400
280
400
1.0
10ERB60DG
600
420
600
units
V
V
V
A
Vrrm
Vrms
Vdc
If(av)
Ifsm
Vf
Ir
Cj
Trr
45
1.03
5.0
100.0
15.0
35
50.0
-55 to +150
35
1.13
A
V
µ
A
µ
A
75
pF
nS
Operating Temperature
(Note 3)
Storage and Operation Junction Temperature
R(ja)
Tstg, Tj
°
/W
C
°
C
Note:
1. Measured at 1.0 MHz and applied voltage of 4.0Vdc
2. Test Condition If
=0.5A,
Ir =1.0A, Irr =0.25A
3. Thermal Resistance from Junction to Ambient at 0.375" lead length, P.C. Board Mounted
Rev.A1
www.gulfsemi.com

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