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MT41K512M8DA-107:P

产品描述DDR DRAM, 512MX8, CMOS, PBGA78, FBGA-78
产品类别存储    存储   
文件大小3MB,共218页
制造商Micron Technology
官网地址http://www.mdtic.com.tw/
标准
下载文档 详细参数 全文预览

MT41K512M8DA-107:P概述

DDR DRAM, 512MX8, CMOS, PBGA78, FBGA-78

MT41K512M8DA-107:P规格参数

参数名称属性值
是否Rohs认证符合
包装说明TFBGA,
Reach Compliance Codecompliant
ECCN代码EAR99
Factory Lead Time16 weeks
Is SamacsysN
访问模式MULTI BANK PAGE BURST
其他特性AUTO/SELF REFRESH
JESD-30 代码R-PBGA-B78
长度10.5 mm
内存密度4294967296 bit
内存集成电路类型DDR DRAM
内存宽度8
功能数量1
端口数量1
端子数量78
字数536870912 words
字数代码512000000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度
组织512MX8
封装主体材料PLASTIC/EPOXY
封装代码TFBGA
封装形状RECTANGULAR
封装形式GRID ARRAY, THIN PROFILE, FINE PITCH
峰值回流温度(摄氏度)NOT SPECIFIED
座面最大高度1.2 mm
自我刷新YES
最大供电电压 (Vsup)1.45 V
最小供电电压 (Vsup)1.283 V
标称供电电压 (Vsup)1.35 V
表面贴装YES
技术CMOS
温度等级OTHER
端子形式BALL
端子节距0.8 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度8 mm
Base Number Matches1

MT41K512M8DA-107:P文档预览

4Gb: x4, x8, x16 DDR3L SDRAM
Description
DDR3L SDRAM
MT41K1G4 – 128 Meg x 4 x 8 banks
MT41K512M8 – 64 Meg x 8 x 8 banks
MT41K256M16 – 32 Meg x 16 x 8 banks
Description
DDR3L SDRAM (1.35V) is a low voltage version of the
DDR3 (1.5V) SDRAM. Refer to DDR3 (1.5V) SDRAM
(Die Rev :E) data sheet specifications when running in
1.5V compatible mode.
Self refresh temperature (SRT)
Automatic self refresh (ASR)
Write leveling
Multipurpose register
Output driver calibration
Features
• V
DD
= V
DDQ
= 1.35V (1.283–1.45V)
• Backward compatible to V
DD
= V
DDQ
= 1.5V ±0.075V
– Supports DDR3L devices to be backward com-
patible in 1.5V applications
• Differential bidirectional data strobe
• 8n-bit prefetch architecture
• Differential clock inputs (CK, CK#)
• 8 internal banks
• Nominal and dynamic on-die termination (ODT)
for data, strobe, and mask signals
• Programmable CAS (READ) latency (CL)
• Programmable posted CAS additive latency (AL)
• Programmable CAS (WRITE) latency (CWL)
• Fixed burst length (BL) of 8 and burst chop (BC) of 4
(via the mode register set [MRS])
• Selectable BC4 or BL8 on-the-fly (OTF)
• Self refresh mode
• T
C
of 105°C
– 64ms, 8192-cycle refresh up to 85°C
– 32ms, 8192-cycle refresh at >85°C to 95°C
– 16ms, 8192-cycle refresh at >95°C to 105°C
Options
• Configuration
– 1 Gig x 4
– 512 Meg x 8
– 256 Meg x 16
• FBGA package (Pb-free) – x4, x8
– 78-ball (9mm x 10.5mm) Rev. E
– 78-ball (7.5mm x 10.6mm) Rev. N
– 78-ball (8mm x 10.5mm) Rev. P
• FBGA package (Pb-free) – x16
– 96-ball (9mm x 14mm) Rev. E
– 96-ball (7.5mm x 13.5mm) Rev. N
– 96-ball (8mm x 14mm) Rev. P
• Timing – cycle time
– 938ps @ CL = 14 (DDR3-2133)
– 1.07ns @ CL = 13 (DDR3-1866)
– 1.25ns @ CL = 11 (DDR3-1600)
• Operating temperature
– Commercial (0°C T
C
+95°C)
– Industrial (–40°C T
C
+95°C)
– Automotive (–40°C T
C
+105°C)
• Revision
Marking
1G4
512M8
256M16
RH
RG
DA
HA
LY
TW
-093
-107
-125
None
IT
AT
:E/:N/:P
Table 1: Key Timing Parameters
Speed Grade
-093
1, 2
-107
1
-125
Notes:
Data Rate (MT/s)
2133
1866
1600
Target
t
RCD-
t
RP-CL
14-14-14
13-13-13
11-11-11
t
RCD
(ns)
t
RP
(ns)
CL (ns)
13.09
13.91
13.75
13.09
13.91
13.75
13.09
13.91
13.75
1. Backward compatible to 1600, CL = 11 (-125).
2. Backward compatible to 1866, CL = 13 (-107).
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. R 09/18 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
4Gb: x4, x8, x16 DDR3L SDRAM
Description
Table 2: Addressing
Parameter
Configuration
Refresh count
Row address
Bank address
Column address
Page size
1 Gig x 4
128 Meg x 4 x 8 banks
8K
64K (A[15:0])
8 (BA[2:0])
2K (A[11, 9:0])
1KB
512 Meg x 8
64 Meg x 8 x 8 banks
8K
64K (A[15:0])
8 (BA[2:0])
1K (A[9:0])
1KB
256 Meg x 16
32 Meg x 16 x 8 banks
8K
32K (A[14:0])
8 (BA[2:0])
1K (A[9:0])
2KB
Figure 1: DDR3L Part Numbers
Note:
1. Not all options listed can be combined to define an offered product. Use the part catalog search on
http://www.micron.com for available offerings.
FBGA Part Marking Decoder
Due to space limitations, FBGA-packaged components have an abbreviated part marking that is different from the
part number. For a quick conversion of an FBGA code, see the FBGA Part Marking Decoder on Micron’s Web site:
http://www.micron.com.
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. R 09/18 EN
2
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
4Gb: x4, x8, x16 DDR3L SDRAM
Description
Contents
Important Notes and Warnings ....................................................................................................................... 11
State Diagram ................................................................................................................................................ 12
Functional Description ................................................................................................................................... 13
Industrial Temperature ............................................................................................................................... 13
Automotive Temperature ............................................................................................................................ 13
General Notes ............................................................................................................................................ 14
Functional Block Diagrams ............................................................................................................................. 15
Ball Assignments and Descriptions ................................................................................................................. 17
Package Dimensions ....................................................................................................................................... 23
Electrical Specifications .................................................................................................................................. 29
Absolute Ratings ......................................................................................................................................... 29
Input/Output Capacitance .......................................................................................................................... 30
Thermal Characteristics .................................................................................................................................. 31
Electrical Specifications – I
DD
Specifications and Conditions ............................................................................ 33
Electrical Characteristics – Operating I
DD
Specifications .................................................................................. 44
Electrical Specifications – DC and AC .............................................................................................................. 49
DC Operating Conditions ........................................................................................................................... 49
Input Operating Conditions ........................................................................................................................ 50
DDR3L 1.35V AC Overshoot/Undershoot Specification ................................................................................ 54
DDR3L 1.35V Slew Rate Definitions for Single-Ended Input Signals .............................................................. 57
DDR3L 1.35V Slew Rate Definitions for Differential Input Signals ................................................................. 59
ODT Characteristics ....................................................................................................................................... 60
1.35V ODT Resistors ................................................................................................................................... 61
ODT Sensitivity .......................................................................................................................................... 62
ODT Timing Definitions ............................................................................................................................. 62
Output Driver Impedance ............................................................................................................................... 66
34 Ohm Output Driver Impedance .............................................................................................................. 67
DDR3L 34 Ohm Driver ................................................................................................................................ 68
DDR3L 34 Ohm Output Driver Sensitivity .................................................................................................... 69
DDR3L Alternative 40 Ohm Driver ............................................................................................................... 70
DDR3L 40 Ohm Output Driver Sensitivity .................................................................................................... 70
Output Characteristics and Operating Conditions ............................................................................................ 72
Reference Output Load ............................................................................................................................... 75
Slew Rate Definitions for Single-Ended Output Signals ................................................................................. 75
Slew Rate Definitions for Differential Output Signals .................................................................................... 77
Speed Bin Tables ............................................................................................................................................ 78
Electrical Characteristics and AC Operating Conditions ................................................................................... 83
Command and Address Setup, Hold, and Derating .......................................................................................... 103
Data Setup, Hold, and Derating ...................................................................................................................... 110
Commands – Truth Tables ............................................................................................................................. 118
Commands ................................................................................................................................................... 121
DESELECT ................................................................................................................................................ 121
NO OPERATION ........................................................................................................................................ 121
ZQ CALIBRATION LONG ........................................................................................................................... 121
ZQ CALIBRATION SHORT .......................................................................................................................... 121
ACTIVATE ................................................................................................................................................. 121
READ ........................................................................................................................................................ 121
WRITE ...................................................................................................................................................... 122
PRECHARGE ............................................................................................................................................. 123
REFRESH .................................................................................................................................................. 123
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. R 09/18 EN
3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
4Gb: x4, x8, x16 DDR3L SDRAM
Description
SELF REFRESH .......................................................................................................................................... 124
DLL Disable Mode ..................................................................................................................................... 125
Input Clock Frequency Change ...................................................................................................................... 129
Write Leveling ............................................................................................................................................... 131
Write Leveling Procedure ........................................................................................................................... 133
Write Leveling Mode Exit Procedure ........................................................................................................... 135
Initialization ................................................................................................................................................. 136
Voltage Initialization/Change ........................................................................................................................ 138
V
DD
Voltage Switching ............................................................................................................................... 139
Mode Registers .............................................................................................................................................. 140
Mode Register 0 (MR0) ................................................................................................................................... 141
Burst Length ............................................................................................................................................. 141
Burst Type ................................................................................................................................................. 142
DLL RESET ................................................................................................................................................ 143
Write Recovery .......................................................................................................................................... 144
Precharge Power-Down (Precharge PD) ...................................................................................................... 144
CAS Latency (CL) ....................................................................................................................................... 144
Mode Register 1 (MR1) ................................................................................................................................... 146
DLL Enable/DLL Disable ........................................................................................................................... 146
Output Drive Strength ............................................................................................................................... 147
OUTPUT ENABLE/DISABLE ...................................................................................................................... 147
TDQS Enable ............................................................................................................................................. 147
On-Die Termination .................................................................................................................................. 148
WRITE LEVELING ..................................................................................................................................... 148
POSTED CAS ADDITIVE Latency ................................................................................................................ 148
Mode Register 2 (MR2) ................................................................................................................................... 149
CAS Write Latency (CWL) ........................................................................................................................... 150
AUTO SELF REFRESH (ASR) ....................................................................................................................... 150
SELF REFRESH TEMPERATURE (SRT) ........................................................................................................ 150
SRT vs. ASR ............................................................................................................................................... 151
DYNAMIC ODT ......................................................................................................................................... 151
Mode Register 3 (MR3) ................................................................................................................................... 151
MULTIPURPOSE REGISTER (MPR) ............................................................................................................ 152
MPR Functional Description ...................................................................................................................... 153
MPR Register Address Definitions and Bursting Order ................................................................................. 154
MPR Read Predefined Pattern .................................................................................................................... 159
MODE REGISTER SET (MRS) Command ........................................................................................................ 159
ZQ CALIBRATION Operation ......................................................................................................................... 160
ACTIVATE Operation ..................................................................................................................................... 161
READ Operation ............................................................................................................................................ 163
WRITE Operation .......................................................................................................................................... 174
DQ Input Timing ....................................................................................................................................... 182
PRECHARGE Operation ................................................................................................................................. 184
SELF REFRESH Operation .............................................................................................................................. 184
Extended Temperature Usage ........................................................................................................................ 186
Power-Down Mode ........................................................................................................................................ 187
RESET Operation ........................................................................................................................................... 195
On-Die Termination (ODT) ............................................................................................................................ 197
Functional Representation of ODT ............................................................................................................. 197
Nominal ODT ............................................................................................................................................ 197
Dynamic ODT ............................................................................................................................................... 199
Dynamic ODT Special Use Case ................................................................................................................. 199
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. R 09/18 EN
4
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
4Gb: x4, x8, x16 DDR3L SDRAM
Description
Functional Description .............................................................................................................................. 199
Synchronous ODT Mode ................................................................................................................................ 205
ODT Latency and Posted ODT .................................................................................................................... 205
Timing Parameters .................................................................................................................................... 205
ODT Off During READs .............................................................................................................................. 208
Asynchronous ODT Mode .............................................................................................................................. 210
Synchronous to Asynchronous ODT Mode Transition (Power-Down Entry) .................................................. 212
Asynchronous to Synchronous ODT Mode Transition (Power-Down Exit) ........................................................ 214
Asynchronous to Synchronous ODT Mode Transition (Short CKE Pulse) ...................................................... 216
09005aef85af8fa8
4Gb_DDR3L.pdf - Rev. R 09/18 EN
5
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2017 Micron Technology, Inc. All rights reserved.
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