1N5624 to 1N5627
Vishay Semiconductors
Standard Avalanche Sinterglass Diode
Features
•
•
•
•
Glass passivated junction
Hermetically sealed package
Controlled avalanche characteristics
Low reverse current
e2
949588
• High surge current loading
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Mechanical Data
Case:
SOD-64 Sintered glass case
Terminals:
Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
approx. 858 mg
Applications
Rectification, general purpose
Parts Table
Part
1N5624
1N5625
1N5626
1N5627
Type differentiation
V
R
= 200 V; I
FAV
= 3 A
V
R
= 400 V; I
FAV
= 3 A
V
R
= 600 V; I
FAV
= 3 A
V
R
= 800 V; I
FAV
= 3 A
SOD-64
SOD-64
SOD-64
SOD-64
Package
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse voltage = Repetitive
peak reverse voltage
Test condition
see electrical characteristics
Part
1N5624
1N5625
1N5626
1N5627
Peak forward surge current
Repetitive peak forward current
Average forward current
Pulse avalanche peak power
Pulse energy in avalanche
mode, non repetitive (inductive
load switch off)
i
2
*t-rating
Junction and storage
temperature range
t
p
= 20
µs,
half sine wave, T
j
=
175 °C
I
(BR)R
= 1 A, T
j
= 175 °C
t
p
= 10 ms, half sinewave
Symbol
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
I
FSM
I
FRM
I
FAV
P
R
E
R
Value
200
400
600
800
100
18
3
1000
20
Unit
V
V
V
V
A
A
A
W
mJ
i
2
*t
T
j
= T
stg
40
- 55 to + 175
A
2
*s
°C
Document Number 86063
Rev. 1.4, 08-Jul-05
www.vishay.com
1
1N5624 to 1N5627
Vishay Semiconductors
Maximum Thermal Resistance
T
amb
= 25 °C, unless otherwise specified
Parameter
Junction ambient
Test condition
l = 10 mm, T
L
= constant
on PC board with spacing 25
mm
Part
Symbol
R
thJA
R
thJA
Value
25
70
Unit
K/W
K/W
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
Reverse recovery time
Reverse recovery charge
I
F
= 3 A
V
R
= V
RRM
V
R
= V
RRM
, T
j
= 100 °C
I
R
= 100
µA,
t
p
/T = 0.01, t
p
= 0.3
ms
V
R
= 4 V, f = 1 MHz
I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A
I
F
= 1 A, d
i
/d
t
= 5 A/µs, V
R
= 50 V
I
F
= 1 A, d
i
/d
t
= 5 A/µs
Test condition
Part
Symbol
V
F
I
R
I
R
V
(BR)
C
D
t
rr
t
rr
Q
rr
40
2
3
6
0.1
5
Min
Typ.
Max
1.0
1
10
1600
60
4
6
10
Unit
V
µA
µA
V
pF
µs
µs
µC
Typical Characteristics (Tamb = 25
°C
unless otherwise specified)
R
thJA
–Therm. Resist. Junction/ Ambient ( K/W)
40
100.000
30
I
F
– Forward Current ( A)
10.000
1.000
0.100
0.010
0.001
T
j
=175°C
20
l
10
l
T
j
=25°C
0
0
5
10
15
T
L
= constant
20
25
30
l – Lead Length ( mm )
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
16392
94 9563
V
F
– Forward Voltage ( V )
Figure 1. Max. Thermal Resistance vs. Lead Length
Figure 2. Forward Current vs. Forward Voltage
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2
Document Number 86063
Rev. 1.4, 08-Jul-05
1N5624 to 1N5627
Vishay Semiconductors
I
FAV
– Average Forward Current ( A )
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
20
R
thJA
=70K/W
PCB: d=25mm
V
R
=V
RRM
half sinewave
R
thJA
=25K/W
l=10mm
P
R
– Reverse Power Dissipation ( mW )
3.5
300
V
R
= V
RRM
250
200
150
100
50
0
40 60 80 100 120 140 160 180
T
amb
– Ambient Temperature (
°C
)
25
16395
P
R
–Limit
@100%V
R
P
R
–Limit
@80%V
R
16393
50
75
100
125
150
T
j
– Junction Temperature (
°C
)
175
Figure 3. Max. Average Forward Current vs. Ambient Temperature
Figure 5. Max. Reverse Power Dissipation vs. Junction
Temperature
1000
V
R
= V
RRM
C
D
– Diode Capacitance ( pF )
I
R
– Reverse Current (
m
A )
100
90
80
70
60
50
40
30
20
10
0
25
50
75
100
125
150
175
16396
f=1MHz
100
10
1
16394
0.1
1.0
10.0
100.0
T
j
– Junction Temperature (
°C
)
V
R
– Reverse Voltage ( V )
Figure 4. Reverse Current vs. Junction Temperature
Figure 6. Diode Capacitance vs. Reverse Voltage
Package Dimensions in mm (Inches)
Sintered Glass Case
SOD-64
Cathode Identification
4.3 (0.168) max.
ISO Method E
1.35 (0.053) max.
26(1.014) min.
4.0 (0.156) max.
26 (1.014) min.
94 9587
Document Number 86063
Rev. 1.4, 08-Jul-05
www.vishay.com
3
1N5624 to 1N5627
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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4
Document Number 86063
Rev. 1.4, 08-Jul-05
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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1
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