FMS2016-005
High Power Reflective GaAs SP4T Switch
F
EATURES
:
•
•
•
•
•
•
3x3x0.9mm Packaged pHEMT Switch
NiPdAu finish for Military and High reliability
applications
High isolation: >30dB at 1.8GHz
Excellent low control voltage performance
Excellent harmonic performance under
GSM/DCS/PCS/EDGE power levels
RoHS Compliant (Directive 2002/95/EC)
Datasheet v2.4
F
UNCTIONAL
S
CHEMATIC
:
ANT
RF1
RF2
RF3
RF4
G
ENERAL
D
ESCRIPTION
:
The FMS2016-005 is a low loss, high power and
linear single pole four throw Gallium Arsenide
antenna switch designed for use in mobile handset
and other high power switching applications. The
die is fabricated using the Filtronic FL05 0.5μm
switch process technology, which offers excellent
performance optimised for switch applications.
T
YPICAL
A
PPLICATIONS
:
•
•
.
Multi-band GSM/DCS/PCS/EDGE handset
modules
High power and linear RF switching
applications
E
LECTRICAL
S
PECIFICATIONS
:
Parameter
Insertion Loss
1.0 – 2.0 GHz
Return Loss
Isolation
RF1 – RF3, RF1 – RF2, RF2 – RF4
Isolation
RF3 – RF4
0.5 – 2.5 GHz
0.5 – 1.0 GHz
1.0 – 2.0 GHz
0.5 – 1.0 GHz
1.0 – 2.0 GHz
1 GHz, Pin = +35 dBm, 100% Duty Cycle
2nd Harmonic Level
2 GHz, Pin = +35 dBm, 100% Duty Cycle
1 GHz, Pin = +35 dBm, 100% Duty Cycle
3rd Harmonic Level
2 GHz, Pin = +35 dBm, 100% Duty Cycle
Switching speed: Trise, Tfall
Ton, Toff
Control Current
10% to 90% RF and 90% to 10% RF
<0.3
50% control to 90% RF and 50% control to 10% RF
+35dBm RF input @1GHz
0.9 & 0.91 GHz, Pin = +20 dBm
IP3
1.85 & 1.86 GHz, Pin = +20 dBm
1.0GHz
P0.1dB
2.0GHz
>37
dBm
>66
>38
dBm
dBm
<10
>68
0.5
15
-75
-65
dBc
μs
μs
μA
dBm
-75
-75
-65
-60
dBc
dBc
26
30
16
0.65
20
34
32
34
30
-75
-60
0.85
dB
dB
dB
dB
dB
dB
dBc
Test Conditions
0.5 – 1.0 GHz
Min
Typ
0.55
Max
0.75
Units
dB
Note:
T
AMBIENT
= 25°C, Vctrl = 0V/2.7V, Z
IN
= Z
OUT
= 50Ω
External DC blocking capacitors are required on all RF ports (typ: 47pF)
1
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website:
www.filtronic.com
FMS2016-005
Datasheet v2.4
T
YPICAL
M
EASURED
P
ERFORMANCE
O
N
E
VALUATION
B
OARD
:
Note: Measurement Conditions V
CTRL
= 0V (low) & 2.5V (high), T
AMBIENT
= 25°C unless otherwise stated
Insertion Loss
FMS2016QFN INSERTION LOSS
0
-0.1
-0.2
-0.3
-0.4
-0.5
RF1 to RF2 Isolation
FMS2016QFN RF1 to RF2 ISOLATION
0
-5
-10
-15
dB
-20
-25
-30
-35
-40
dB
-0.6
-0.7
-0.8
-0.9
-1
-1.1
-1.2
0.5
1
1.5
2
Frequency (GHz)
2.5
3
3.5
0.5
1
1.5
2
Frequency (GHz)
2.5
3
3.5
RF3 to RF4 Isolation
FMS2016QFN RF3 to RF4 ISOLATION
0
-5
-10
-15
dB
-20
-25
-30
-35
-40
0.5
1
1.5
2
Frequency (GHz)
2.5
3
3.5
dB
RF1 to RF3 AND RF2 to RF4 Isolation
FMS2016QFN RF1 to RF3 and RF2 to RF4 ISOLATION
0
-5
-10
-15
-20
-25
-30
-35
-40
0.5
1
1.5
2
Frequency (GHz)
2.5
3
3.5
Return Loss
FMS2016QFN RETURN LOSS
-15
-20
-25
dB
-30
-35
-40
0.5
1
1.5
2
Frequency (GHz)
2.5
3
3.5
3
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website:
www.filtronic.com
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