FMS2016-005
High Power
Reflective
GaAs SP4T
Switch
FMS2016-005
HIGH POWER REFLECTIVE GaAs SP4T SWITCH
Package: 3 mm x 3 mm QFN
Product Description
The FMS2016-005 is a low loss, high power, linear single-pole four-throw Gallium
Arsenide antenna switch designed for use in mobile handset and other high power
switching applications. The die is fabricated using the RFMD FL05 0.5
Pm
switch
process technology, which offers excellent performance optimized for switch appli-
cations.
Features
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
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Specification
Typ.
Unit
Min.
Max.
16
30
0.55
0.65
20
34
32
0.75
0.85
dB
dB
dB
dB
dB
dB
dB
dBc
dBc
dBc
dBc
Ps
Ps
PA
dBm
dBm
dBm
dBm
26
34
30
-75
-75
-75
-75
< 0.3
-60
-65
-60
-65
0.5
<10
> 68
> 66
> 38
> 37
15
9
Parameter
Electrical Specifications
Insertion Loss
Return Loss
Isolation
Isolation
2nd Harmonic Level
3rd Harmonic Level
Switching Speed: T
RISE
, T
FALL
Switching Speed: T
ON
, T
OFF
Control Current
IP3
P0.1 dB
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DS130507
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RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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Excellent Low Control Voltage
Performance
Excellent Harmonic Perfor-
mance Under
GSM/DCS/PCS/EDGE Power
Levels
High Isolation: > 30 dB typ. at
1.8 GHz
NiPdAu Finish for Military and
High Reliability Applications
Applications
Multi-band
GSM/DCS/PCS/EDGE Hand-
set Modules
High Power and Linear RF
Switching Applications
T
AMBIENT
= 25 °C, V
CTRL
= 0 V/2.7 V, Z
IN
= Z
OUT
= 50
:
External DC-blocking capacitors are required on all
RF ports (typ. 47 pF)
0.5 GHz to 1.0 GHz
1.0 GHz to 2.0 GHz
0.5 GHz to 2.5 GHz
0.5 GHz to 1.0 GHz
1.0 GHz to 2.0 GHz; RF1 to RF2, RF1 to RF3, RF2 to
RF4
0.5 GHz to 1.0 GHz
1.0 GHz to 2.0 GHz; RF3 to RF4
1 GHz, P
IN
= +35 dBm, 100% duty cycle
2 GHz, P
IN
= +35 dBm, 100% duty cycle
1 GHz, P
IN
= +35 dBm, 100% duty cycle
2 GHz, P
IN
= +35 dBm, 100% duty cycle
10 % to 90 % RF and 90 % to 10 % RF
50 % control to 90 % RF and 50 % control to 10 %
RF
+35 dBm RF input at 1 GHz
0.9 GHz and 0.91 GHz, P
IN
= +20 dBm
1.85 GHz and 1.86 GHz, P
IN
= +20 dBm
1.0 GHz
2.0 GHz
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Condition
1 of 6
FMS2016-005
Absolute Maximum Ratings
1
Parameter
Maximum Input Power (P
IN
)
Control Voltage (V
CTRL
)
Operating Temperature (T
OPER
)
Storage Temperature (T
STOR
)
Rating
+38
+6
-40 to 100
-55 to 150
Unit
dBm
V
°C
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EU Directive 2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Truth Table
Path(s)
RF1 to ANT
RF2 to ANT
RF3 to ANT
RF4 to ANT
High
Low
Low
Low
Low
High
Low
Low
Low
Low
High
Low
Note: High 2.7 V to 6 V; Low 0 V to 0.2 V
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7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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Low
Low
Low
High
V1
V2
V3
V4
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FMS2016-005
Typical Measured Performance on Evaluation Board
Measurement Conditions: V
CTRL
= 0 V (low) and 2.5 V (high), T
AMBIENT
=25
qC
unless otherwise stated.
Evaluation Board De-Embedding Data (Measured)
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DS130507
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7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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FMS2016-005
Part Identification
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Pin
1
2
3
4
5
6
7
8
9
10
11
12
Paddle
Name
RF1
GND
RF3
V3
NC
V4
RF4
GND
RF2
V2
ANT
V1
Ground
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4 of 6
QFN 12-Lead 3 mm x 3 mm; NiPdAu finish for military and high reliability applications
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Package Drawing
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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Pad Layout
Description
RF port 1
Ground
RF port 3
VCTRL3 (ANT to RF3)
No connection
VCTRL4 (ANT to RF4)
RF port 4
Ground
RF port 2
VCTRL2 (ANT to RF2)
Antenna
VCTRL1 (ANT to RF1)
DS130507
FMS2016-005
Evaluation Board Layout
Bill of Materials
Label
Board
RFC
DCC
C1
C2
Preferred evaluation board material is 0.25 mm thick ROGERS RT4350. All RF tracks should be 50
:
characteristic impedance.
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Tape and reel information on this material is in accordance with EIA-481-1 except where exceptions are identified.
DS130507
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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Component
SMA RF connector
DC connector
Capacitor, 47 pF, 0402
Capacitor, 470 pF, 0603
Tape and Reel
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