The FMS2014-001 is a low loss, high power, linear single-pole double-throw Gallium
Arsenide antenna switch designed for use in mobile handset applications. The die
is fabricated using the RFMD FL05 0.5μm switch process technology, which offers
excellent performance optimised for switch applications. The FMS2014-001 is
designed for use in dual-, tri-, and quad-band GSM handset antenna switch mod-
ules and RF front end modules. It can also find use in other applications where high
power and linear RF switching is necessary.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
Features
Excellent Low Control Voltage
Performance
Excellent Harmonic Perfor-
mance Under
GSM/DCS/PCS/EDGE Power
Levels
Very High Tx-Rx Isolation:
>28dB typ. at 1.8GHz
Very Low Insertion Loss:
0.5dB at 1.8GHz
Very Low Control Current
ANT
V1
V2
Applications
Mobile Handset Applications
Dual-, Tri-, and Quad-band
GSM Handset Antenna
Switch Modules
RF Front End Modules
RF1
RF2
Parameter
Electrical Specifications
Insertion Loss
Return Loss
Isolation
2nd Harmonic Level
3rd Harmonic Level
Switching Speed: T
RISE
, T
FALL
Switching Speed: T
ON
, T
OFF
Control Current
Min.
Specification
Typ.
Max.
Unit
Condition
T
AMBIENT
=25°C, V
CTRL
=0V/2.5V, Z
IN
=Z
OUT
=50Ω
External DC-blocking capacitors are required on all
RF ports (typ. 700[F)
0.5 GHz to 1.0GHz
1.0GHz to 2.0GHz
0.5GHz to 2.5GHz
0.5GHz to 1.0GHz
1.0GHz to 2.0GHz
1GHz, P
IN
=+35dBm, 100% duty cycle
2GHz, P
IN
=+33dBm, 100% duty cycle
1GHz, P
IN
=+35dBm, 100% duty cycle
2GHz, P
IN
=+33dBm, 100% duty cycle
10% to 90% RF and 90% to 10% RF
50% control to 90% RF and 50% control to 10%
RF
+35dBm RF input at 1GHz
16
-30
-26
-60
-65
-60
-65
0.45
0.5
20
-32
-30
-70
-75
-70
-75
<0.3
<0.3
5
0.5
0.55
dB
dB
dB
dB
dB
dBc
dBc
dBc
1.0
1.0
10
0.2
5
dBc
μs
μs
μA
V
V
Ω
Ω
General Test Conditions
Bias Voltages (Low)
Bias Voltages (High)
Port Impedances
Off Arm Termination
0
2.5
50
50
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