Preliminary Data Sheet
2.1
FMS2003QFN-1
High Power Reflective GaAs SP4T Switch
Features:
♦
♦
♦
♦
♦
♦
♦
3x3x0.9mm Packaged pHEMT Switch
NiPdAu finish for Military and High
reliability applications
Excellent low control voltage performance
Excellent harmonic performance under
GSM/DCS/PCS/EDGE power levels
High isolation: >30dB at 0.9GHz
Low Insertion loss: 0.5dB at 0.9GHz
Low control current
Functional Schematic
ANT
RF1
RF2
RF3
RF4
Description and Applications:
The FMS2003QFN is a low loss, high power and linear single pole four throw Gallium Arsenide
antenna switch designed for use in mobile handset applications. The die is fabricated using the
Filtronic FL05 0.5µm switch process technology, which offers excellent performance optimised for
switch applications. The FMS2003QFN is designed for use in dual/tri and quad band GSM handset
antenna switch modules and RF front-end modules. It can also find use in other applications where
high power and linear RF switching is necessary.
Electrical Specifications:
Parameter
Insertion Loss
Return Loss
(T
AMBIENT
= 25°C,V
ctrl
= 0V/2.5V, Z
IN
= Z
OUT
= 50Ω)
Test Conditions
0.5 – 1.0 GHz
1.0 – 2.0 GHz
0.5 – 2.5 GHz
0.5 – 1.0 GHz
1.0 – 2.0 GHz
1 GHz, Pin = +35 dBm, 100% Duty Cycle
2 GHz, Pin = +33dBm, 100% Duty Cycle
1 GHz, Pin = +35 dBm, 100% Duty Cycle
2 GHz, Pin = +33dBm, 100% Duty Cycle
10% to 90% RF
90% to 10% RF
0.5 – 1.0 GHz
1.0 – 2.0 GHz
0.5 – 1.0 GHz
1.0 – 2.0 GHz
Tx1 836Hz Tx2 837MHz +21dBm Rx1 880MHz –25dBm
Tx1 1879.5MHz Tx2 1880.5MHz +21dBm,Rx1 1960MHz –25dBm
+35dBm RF input @1GHz
Min
Typ
<0.62
<0.65
20
>30
>26
-69
-67
-69
-70
<0.15
<0.06
38
38
>65
>62
>110
Max
Units
dB
dB
dB
dB
dB
dBc
dBc
dBc
dBc
µs
µs
dBm
Isolation
2nd Harmonic Level
3rd Harmonic Level
Switching speed : Trise, Tfall
P0.1dB
IP3
dBm
Cross modulation
dBm
µA
Control Current
<10
1
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850-5790
Fax: +1 (408) 850-5766
Email:
sales@filcsi.com
Website: www.filtronic.com
Preliminary Data Sheet
2.1
FMS2003QFN-1
Absolute Maximum Ratings:
Parameter
Max Input Power
Control Voltage
Operating Temp
Storage Temp
Symbol
Pin
V ctrl
T oper
T stor
Absolute Maximum
+38dBm
+5V
-40°C to +100°C
-55°C to +150°C
Note:
Exceeding any one of these absolute maximum ratings may cause permanent damage to the
device.
Truth Table:
Switch
State
(A)
V1
V2
V3
V4
ANT
TO
RF1
Insertion
Loss
Isolation
ANT
TO
RF2
Isolation
Insertion
Loss
Isolation
ANT
TO
RF1
Isolation
ANT
TO
RF2
Isolation
HIGH
LOW
LOW
LOW
(B)
LOW
HIGH
LOW
LOW
Isolation
Insertion
Loss
Isolation
Isolation
(C)
LOW
LOW
HIGH
LOW
Isolation
Isolation
Insertion
Loss
(D)
LOW
LOW
LOW
HIGH
Isolation
Isolation
General Test Conditions:
Bias Voltages
Port Impedances
Off arm termination
LOW = 0V to 0.2V
HIGH +2.5V to +5V
50Ω
50Ω
Note:
External DC blocking capacitors are required on all RF ports (typ: 100pF)
2
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850-5790
Fax: +1 (408) 850-5766
Email:
sales@filcsi.com
Website: www.filtronic.com
Preliminary Data Sheet
2.1
FMS2003QFN-1
Typical Measured Performance on Evaluation Board (De-Embedded):
(Measurement Conditions V
CTRL
= 2.5V (high) & 0V (low), T
AMBIENT
= 25°C unless otherwise stated)
0
-0.1
-0.2
-0.3
-0.4
dB
-0.5
-0.6
-0.7
-0.8
-0.9
-1
0.5
FMS2003QFN DE EMBEDDED INSERTION LOSS
1
1.5
2
2.5
Frequency (GHz)
3
3.5
-15
FMS2003QFN ISOLATION
-20
Key To Measurements
-25
-30
--
--
0.5
1
1.5
2
Frequency (GHz)
2.5
3
3.5
dB
Measurement ay -40°C
-35
Measurement ay 85°C
-40
--
Measurement ay 25°C
-10
FMS2003QFN RETURN LOSS
-15
dB
-20
-25
-30
0.5
1
1.5
2
Frequency (GHz)
2.5
3
3.5
3
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850-5790
Fax: +1 (408) 850-5766
Email:
sales@filcsi.com
Website: www.filtronic.com
Preliminary Data Sheet
2.1
FMS2003QFN-1
Pad Layout:
V1
ANT
V2
Pin Number
1
Description
RF1
GND
RF3
V3
N/C
V4
RF4
GND
RF2
V2
ANT RF
V1
GND
Pin 1
RF1
2
RF3
3
12
11
10
9
RF2
2
3
4
PADDLE
8
7
RF4
5
6
7
8
9
10
11
4
5
6
V3
V4
12
PADDLE
*View from the top of the package
QFN 12 Lead 3*3 Package Outline:
♦
NiPdAu finish for Military and High reliability applications
4
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850-5790
Fax: +1 (408) 850-5766
Email:
sales@filcsi.com
Website: www.filtronic.com
Preliminary Data Sheet
2.1
FMS2003QFN-1
Evaluation Board:
BOM
Label
C6
C1
C5
C7
C2
C10, C11, C12,
C13
C1,C2,
C3,C4,C5
C6, C7, C8, C9
Component
Capacitor, 470pF, 0603
Capacitor, 100pF, 0402
Capacitor, 47pF, 0402
C3
C10
C8 C9
C4
Preferred evaluation board material is 0.25 mm thick
BOARD
ROGERS RT4350. All RF tracks should be 50 ohm
characteristic impedance.
C11 C12 C13
Evaluation Board De-Embedding Data (Measured):
0
-0.1
-0.2
-0.3
-0.4
dB
FMS2003QFN CALIBRATION BOARD INSERTION LOSS
-15
FMS2003QFN CALIBRATION BOARD RETURN LOSS
-20
-25
dB
-30
-35
0.5
1
1.5
2
2.5
Frequency (GHz)
3
3.5
-0.5
-0.6
-0.7
-0.8
-0.9
-1
-40
0.5
1
1.5
2
2.5
Frequency (GHz)
3
3.5
5
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 988 1845
Fax: +1 (408) 970 9950
Email:
sales@filcsi.com
Website: www.filtronic.com
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