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1SV323(TPH3,F)

产品描述Diode VAR Cap Single 10V 26.5pF 2-Pin ESC T/R
产品类别分立半导体    二极管   
文件大小114KB,共3页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
标准
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1SV323(TPH3,F)概述

Diode VAR Cap Single 10V 26.5pF 2-Pin ESC T/R

1SV323(TPH3,F)规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Toshiba(东芝)
Reach Compliance Codeunknown
Is SamacsysN
二极管类型VARIABLE CAPACITANCE DIODE
最大重复峰值反向电压10 V
表面贴装YES
Base Number Matches1

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1SV323
TOSHIBA Diode
Silicon Epitaxial Planar Type
1SV323
TCXO/VCO
High capacitance ratio: C
1 V
/C
4 V
= 4.3 (typ.)
Low series resistance: r
s
= 0.4
(typ.)
Useful for small size tuner.
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Reverse voltage
Junction temperature
Storage temperature range
Symbol
V
R
T
j
T
stg
Rating
10
125
−55~125
Unit
V
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
JEDEC
JEITA
TOSHIBA
1-1G1A
Weight: 0.0014 g (typ.)
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Reverse voltage
Reverse current
Capacitance
Capacitance
Capacitance ratio
Series resistance
Symbol
V
R
I
R
C
1 V
C
4 V
C
1 V
/C
4 V
r
s
I
R
=
1
μA
V
R
=
10 V
V
R
=
1 V, f
=
1 MHz
V
R
=
4 V, f
=
1 MHz
V
R
=
4 V, f
=
100 MHz
Test Condition
Min
10
26.5
6.0
4.0
Typ.
4.3
0.4
Max
3
29.5
7.1
0.8
Unit
V
nA
pF
pF
Ω
Note: Signal level when capacitance is measured: Vsig
=
500 mVrms
Marking
1
2007-11-01

 
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