R1LV0216BSB
2Mb Advanced LPSRAM (128k word x 16bit)
R10DS0051EJ0100
Rev.1.00
2011.03.30
Description
The R1LV0216BSB is a family of low voltage 2-Mbit static RAMs organized as 131,072-word by 16-bit, fabricated
by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LV0216BSB has realized higher density,
higher performance and low power consumption. The R1LV0216BSB is suitable for memory applications where a
simple interfacing, battery operating and battery backup are the important design objectives. The R1LV0216BSB has
been packaged in 44-pin TSOP.
Features
•
•
•
•
•
•
•
•
Single 2.7~3.6V power supply
Small stand-by current: 1µA (3.0V, typical)
No clocks, No refresh
All inputs and outputs are TTL compatible.
Easy memory expansion by CS#, LB# and UB#
Common Data I/O
Three-state outputs: OR-tie Capability
OE# prevents data contention on the I/O bus
Ordering Information
Orderable Part Name
R1LV0216BSB-5SR#B0
R1LV0216BSB-5SI#B0
R1LV0216BSB-7SR#B0
R1LV0216BSB-7SI#B0
R1LV0216BSB-5SR#S0
R1LV0216BSB-5SI#S0
R1LV0216BSB-7SR#S0
R1LV0216BSB-7SI#S0
Access
time
55 ns
Temperature
Range
0 ~ +70°C
-40 ~ +85°C
0 ~ +70°C
-40 ~ +85°C
0 ~ +70°C
-40 ~ +85°C
0 ~ +70°C
-40 ~ +85°C
PTSB0044GD-B
(44P3F-B)
Embossed
tape
1000pcs/Reel
400-mil 44pin plastic
TSOP (II)
(normal-bend type)
Tray
Max. 135pcs/Tray
Max. 1080pcs/Inner Box
Package
Shipping
Container
Quantity
70 ns
55 ns
70 ns
R10DS0051EJ0100 Rev.1.00
2011.03.30
Page 1 of
14
R1LV0216BSB
Pin Arrangement
A4
A3
A2
A1
A0
CS#
DQ0
DQ1
DQ2
DQ3
Vcc
GND
DQ4
DQ5
DQ6
DQ7
WE#
A16
A15
A14
A13
A12
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
A5
A6
A7
OE#
UB#
LB#
DQ15
DQ14
DQ13
DQ12
GND
Vcc
DQ11
DQ10
DQ9
DQ8
NC
A8
A9
A10
A11
NC
44-pin TSOP (II)
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
Pin Description
Pin name
Vcc
Vss
A0 to A16
DQ0 to DQ15
CS#
WE#
OE#
LB#
UB#
NC
Power supply
Ground
Address input
Data input/output
Chip select 1
Write enable
Output enable
Lower byte enable
Upper byte enalbe
Non connection
Function
R10DS0051EJ0100 Rev.1.00
2011.03.30
Page 2 of
14
R1LV0216BSB
Block Diagram
A
0
A
1
ADDRESS
BUFFER
ROW
DECODER
MEMORY ARRAY
128k-word x16-bit
DQ0
A
16
DQ1
DQ
BUFFER
DATA
SENSE / WRITE AMPLIFIER
SELECTOR
DQ7
DQ8
COLUMN DECODER
DQ
BUFFER
DQ9
CLOCK
GENERATOR
DQ15
CS#
LB#
UB#
UPPER or
LOWER BYTE
CONTROL
Vcc
Vss
WE#
OE#
R10DS0051EJ0100 Rev.1.00
2011.03.30
Page 3 of
14
R1LV0216BSB
Operation Table
CS#
H
X
L
L
L
L
L
L
L
L
L
Note 1.
LB#
X
H
L
L
L
H
H
H
L
L
L
H: V
IH
L:V
IL
UB#
X
H
H
H
H
L
L
L
L
L
L
X: V
IH
or V
IL
WE#
X
X
L
H
H
L
H
H
L
H
H
OE#
X
X
X
L
H
X
L
H
X
L
H
DQ0~7
High-Z
High-Z
Din
Dout
High-Z
High-Z
High-Z
High-Z
Din
Dout
High-Z
DQ8~15
High-Z
High-Z
High-Z
High-Z
High-Z
Din
Dout
High-Z
Din
Dout
High-Z
Operation
Stand-by
Stand-by
Write in lower byte
Read in lower byte
Output disable
Write in upper byte
Read in upper byte
Output disable
Word write
Word read
Output disable
Absolute Maximum
Parameter
Power supply voltage relative to Vss
Terminal voltage on any pin relative to Vss
Power dissipation
Operation temperature
Storage temperature range
Storage temperature range under bias
Note
Symbol
Vcc
V
T
P
T
Topr
*3
Tstg
Tbias
*3
Value
-0.5 to +4.6
-0.5
*1
to Vcc+0.5
*2
0.7
R Ver.
0 to +70
I Ver.
-40 to +85
-65 to 150
R Ver.
0 to +70
I Ver.
-40 to +85
unit
V
V
W
°C
°C
°C
1. –3.0V for pulse
≤
30ns (full width at half maximum)
2. Maximum voltage is +4.6V.
3. Ambient temperature range depends on R/I-version. Please see table on page 1.
R10DS0051EJ0100 Rev.1.00
2011.03.30
Page 4 of
14
R1LV0216BSB
DC Operating Conditions
Parameter
Supply voltage
Input high voltage
Input low voltage
Ambient temperature range
Note
R Ver.
I Ver.
Symbol
Vcc
Vss
V
IH
V
IL
Ta
Min.
2.7
0
2.2
-0.3
0
-40
Typ.
3.0
0
-
-
-
-
Max.
3.6
0
Vcc+0.3
0.6
+70
+85
Unit
V
V
V
V
°C
°C
1
2
2
Note
1. –3.0V for pulse
≤
30ns (full width at half maximum)
2. Ambient temperature range depends on R/I-version. Please see table on page 1.
DC Characteristics
Parameter
Input leakage current
Output leakage current
Average operating current
Symbol
| I
LI
|
| I
LO
|
I
CC1
Min.
-
-
-
Typ.
-
-
15
Max.
1
1
25
Unit
μA
μA
mA
Test conditions
Vin = Vss to Vcc
CS# = LB# = UB# = V
IH
or OE# =V
IH
,
V
I/O
=Vss to Vcc
Min. cycle, duty =100%, I
I/O
= 0mA
CS# =V
IL
, Others = V
IH
/V
IL
Cycle =1μs, duty =100%, I
I/O
= 0mA
CS#
≤
0.2V,
V
IH
≥
Vcc-0.2V, V
IL
≤
0.2V
(1) CS# = V
IH
, Others =V
IH
/V
IL
or
(2) LB# = UB# = V
IH
, Others =V
IH
/V
IL
~+25°C
~+40°C
~+70°C
~+85°C
I
OH
= -0.5mA
I
OH
= -0.05mA
I
OL
= 2mA
Vin = Vss to Vcc
I
CC2
Standby current
Standby current
-
2
5
mA
I
SB
-
-
-
-
1
*1
-
-
-
-
-
-
0.5
2
3
8
10
-
-
0.4
mA
μA
μA
μA
μA
V
V
V
I
SB1
-
-
Output high voltage
V
OH
V
OH2
Output low voltage
Note
V
OL
2.4
Vcc
- 0.5
-
(1) CS#
≥
Vcc-0.2V or
(2) LB# = UB#
≥
Vcc-0.2V,
CS#
≤
0.2V
1. Typical parameter indicates the value for the center of distribution at 3.0V (Ta= 25ºC), and not 100% tested.
R10DS0051EJ0100 Rev.1.00
2011.03.30
Page 5 of
14
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
