1N3016B thru 1N3051B, e3
1 WATT METAL CASE ZENER DIODES
SCOTTSDALE DIVISION
DESCRIPTION
This well established zener diode series for the 1N3016 thru 1N3051
JEDEC registration in the metal case DO-13 package provides a glass
hermetic seal for 6.8 to 200 volts. It is also well suited for high-reliability
applications where it is available in JAN, JANTX, and JANTXV military
qualifications. Lower voltages are also available in the 1N3821 thru
1N3830 series (3.3 V to 7.5 V) in the same package (see separate data
sheet). Microsemi also offers numerous other Zener diode products for a
variety of other packages including surface mount.
APPEARANCE
WWW .
Microsemi
.C
OM
DO-13
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
FEATURES
•
•
•
•
Zener Voltage Range: 6.8V to 200V
Hermetically sealed DO-13 metal package
Internally solder-bonded construction.
Also available in JAN, JANTX, JANTXV qualifications
per MIL-PRF19500/115 by adding the JAN, JANTX,
or JANTXV prefixes to part numbers for desired level
of screening, e.g. JANTX1N3016B,
JANTXV1N3051B, etc.
Surface mount also available with 1N3016BUR-1 thru
1N3051BUR-1 series on separate data sheet
RoHS Compliant devices available by adding “e3” suffix
•
•
•
•
•
•
•
APPLICATIONS / BENEFITS
Regulates voltage over a broad operating current
and temperature range
Wide selection from 6.8 to 200 V
Tight voltage tolerances available
Low reverse (leakage) currents
Nonsensitive to ESD
Hermetically sealed metal package
Inherently radiation hard as described in
Microsemi MicroNote 050
•
•
MAXIMUM RATINGS
•
•
Operating Junction and Storage Temperatures:
-65
o
C to +175
o
C
THERMAL RESISTANCE: 50
o
C/W* junction to lead
at 0.375 inches (10 mm) from body or 110
o
C/W
junction to ambient when leads are mounted on FR4
2
PC board with 4 mm copper pads (1 oz) and track
width 1 mm, length 25 mm
DC Power Dissipation
*
: 1.0 Watt at T
L
< +125
o
C 3/8”
(10 mm) from body or 1.0 Watts at T
L
< +65
o
C when
mounted on FR4 PC board as described for thermal
resistance above (also see Fig 1)
Forward Voltage @ 200 mA: 1.5 Volts.
Solder Temperatures: 260
o
C for 10 s (maximum)
•
•
MECHANICAL AND PACKAGING
CASE: DO-13 (DO-202AA), welded, hermetically
sealed metal and glass
FINISH: All external surfaces are Tin-Lead (Pb/Sn)
or RoHS Compliant annealed matte-Tin (Sn) plating
and solderable per MIL-STD-750 method 2026
POLARITY: Cathode connected case.
WEIGHT: 1.4 grams.
Tape & Reel option: Standard per EIA-296 (add
“TR” suffix to part number)
See package dimensions on last page
•
•
•
•
•
1N3016B – 1N3051B, e3
•
•
*
For further mounting reference options, thermal resistance from junction to metal case is
<
20
o
C/W
when mounting DO-13 metal case directly on heat sink.
Copyright
©
2006
3-12-2006 REV B
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
1N3016B thru 1N3051B, e3
1 WATT METAL CASE ZENER DIODES
SCOTTSDALE DIVISION
*ELECTRICAL CHARACTERISTICS @ 25
o
C
JEDEC
TYPE
NUMBER
(Note 1)
1N3016B
1N3017B
1N3018B
1N3019B
1N3020B
1N3021B
1N3022B
1N3023B
1N3024B
1N3025B
1N3026B
1N3027B
1N3028B
1N3029B
1N3030B
1N3031B
1N3032B
1N3033B
1N3034B
1N3035B
1N3036B
1N3037B
1N3038B
1N3039B
1N3040B
1N3041B
1N3042B
1N3043B
1N3044B
1N3045B
1N3046B
1N3047B
1N3048B
1N3049B
1N3050B
1N3051B
NOMINAL
ZENER
VOLTAGE
V
Z
@ I
ZT
(Note 2)
Volts
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
160
180
200
ZENER
TEST
CURRENT
I
ZT
mA
37
34
31
28
25
23
21
19
17
15.5
14
12.5
11.5
10.5
9.5
8.5
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.7
3.3
3.0
2.8
2.5
2.3
2.0
1.9
1.7
1.6
1.4
1.2
MAXIMUM ZENER IMPEDANCE
(Note 3)
Z
ZT
@ I
ZT
Z
ZK
@ I
ZK
OHMS
OHMS
mA
3.5
700
1.0
4.0
700
.5
4.5
700
.5
5
700
.5
7
700
.25
8
700
.25
9
700
.25
10
700
.25
14
700
.25
16
700
.25
20
750
.25
22
750
.25
23
750
.25
25
750
.25
35
750
.25
40
1000
.25
45
1000
.25
50
1000
.25
60
1000
.25
70
1500
.25
80
1500
.25
95
1500
.25
110
2000
.25
125
2000
.25
150
2000
.25
175
2000
.25
200
3000
.25
250
3000
.25
350
3000
.25
450
4000
.25
550
4500
.25
700
5000
.25
1000
6000
.25
1100
6500
.25
1200
7000
.25
1500
8000
.25
MAXIMUM
ZENER
CURRENT
I
ZM
(Note 4)
mA
140
125
115
105
95
85
80
74
63
60
52
47
43
40
34
31
28
26
23
21
19
18
17
15
14
12
11
10
9.0
8.3
8.0
6.9
5.7
5.4
4.9
4.6
MAXIMUM
REVERSE
LEAKAGE
CURRENT†
@ V
R
I
R
μA
Volts
150
5.2
100
5.7
50
6.2
25
6.9
25
7.6
10
8.4
10
9.1
10
9.9
10
11.4
10
12.2
10
13.7
10
15.2
10
16.7
10
18.2
10
20.6
10
22.8
10
25.1
10
27.4
10
29.7
10
32.7
10
35.8
10
38.8
10
42.6
10
47.1
10
51.7
10
56.0
10
62.2
10
69.2
10
76.0
10
83.6
10
91.2
10
98.8
10
114.0
10
121.6
10
136.8
10
152.0
TYPICAL
TEMP. COEFF.
OF ZENER
VOLTAGE
α
VZ
o
%/ C
.040
.045
.048
.050
.055
.060
.065
.065
.070
.070
.075
.075
.080
.080
.085
.085
.085
.085
.090
.090
.090
.090
.090
.090
.090
.090
.090
.090
.090
.095
.095
.095
.095
.095
.095
.100
WWW .
Microsemi
.C
OM
*JEDEC Registered Data.
NOTES:
1.
2.
3.
†Not JEDEC Data.
When using JEDEC numbers, B suffix signifies +/-5% tolerance on nominal zener voltage. The suffix A is used to identify +/-10%
tolerance; no suffix indicates +/-20% tolerance: suffix C is used to identify +/- 2%; and suffix D is used to identify +/- 1% tolerance.
Zener Voltage (
V
Z
) is measured with junction in thermal equilibrium with still air at a temperature of 25 C. The test currents (I
ZT
) at
nominal voltages provide a constant 0.25 watts.
The zener impedance is derived when a 60 cycle ac current having an rms value equal to 10% of the dc zener current (I
ZT
or
I
ZK
) is superimposed on I
ZT
or I
ZK
. Zener impedance is measured at 2 points to ensure a sharp knee on the breakdown curve
and to eliminate unstable units. See MicroNote 202 for variation in dynamic impedance with different zener currents.
These values of I
ZM
may often be exceeded in the case of individual diodes. The values shown are calculated for a unit at the high
voltage end of its tolerance range. Allowance has also been made for the rise in zener voltage above V
ZT
that results from zener
impedance and the increase in junction temperature as a unit approaches thermal equilibrium at a dissipation of 1 watt. The I
ZM
values shown for +/-5% tolerance units may be used with little error for +/-10% tolerance units, but should be reduced by 7% to
include a +/-20% tolerance unit near the high voltage end of its tolerance range.
o
1N3016B – 1N3051B, e3
4.
Copyright
©
2006
3-12-2006 REV B
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
1N3016B thru 1N3051B, e3
1 WATT METAL CASE ZENER DIODES
SCOTTSDALE DIVISION
OUTLINE AND CIRCUIT
WWW .
Microsemi
.C
OM
TEMPERATURE COEFFICIENT mV/ C
TEMPERATURE COEFFICIENT %/ C
Voltage Temperature
o
Coefficient %/ C
P
d
- RATED POWER
DISSIPATION (WATTS)
o
mV Change / C
o
o
T
L
– Lead Temperature ( C) 3/8” from body
o
NOMINAL ZENER VOLTAGE (VOLTS)
or T
A
on FR4 PC Board
FIGURE 1
Power Derating Curve
FIGURE 2
Typical Zener Voltage Temperature
Coeff. vs. Zener Voltage
PACKAGE DIMENSIONS
1N3016B – 1N3051B, e3
FIGURE 3
Typical Capacitance vs. Reverse Voltage for 1-Watt Zeners
DO-13 (DO-202AA)
Copyright
©
2006
3-12-2006 REV B
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 3
NXP MCU
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