LAPT
2SA1386/1386A
Application :
Audio and General Purpose
(Ta=25°C)
2SA1386
–100
max
V
CB
=
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
V
EB
=–5V
I
C
=–25mA
V
CE
=–4V, I
C
=–5A
I
C
=–5A, I
B
=–0.5A
V
CE
=–12V, I
E
=2A
V
CB
=–10V, f=1MHz
–160
–160
min
2SA1386A
–100
max
–180
–100
max
–180
min
50
min
∗
–2.0
max
40
typ
500
typ
V
MHz
pF
5.45
±0.1
B
C
E
5.45
±0.1
1.4
20.0min
4.0max
2
3
1.05
+0.2
-0.1
0.65
+0.2
-0.1
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SC3519/A)
s
Absolute maximum ratings
(Ta=25°C)
s
Electrical Characteristics
Symbol 2SA1386 2SA1386A
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
–160
–160
–5
–15
–4
130(Tc=25°C)
150
–55 to +150
–180
–180
Unit
V
V
V
A
A
W
°C
°C
Symbol
I
CBO
Conditions
External Dimensions
MT-100(TO3P)
5.0
±0.2
15.6
±0.4
9.6
2.0
1.8
4.8
±0.2
2.0
±0.1
Unit
µ
A
µ
A
V
19.9
±0.3
V
4.0
a
b
ø3.2
±0.1
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–40
R
L
(Ω)
4
I
C
(A)
–10
V
BB1
(V)
–10
V
BB2
(V)
5
∗h
FE
Rank O(50 to 100), P(70 to 140), Y(90 to 180)
I
B1
(A)
–1
I
B2
(A)
1
t
on
(
µ
s)
0.3typ
t
stg
(
µ
s)
0.7typ
t
f
(
µ
s)
0.2typ
Weight : Approx 6.0g
a. Type No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
C o l l ec t or - Em i t t e r Sa t ur at i on Vo lt a ge V
C E (s at)
( V )
–15
–5
00
V
C E
( sat ) – I
B
Characteristics
(Typical)
–3
I
C
– V
BE
Temperature Characteristics
(Typical)
–15
( V
C E
=– 4 V )
m
m
A
A
–7
00
–4
00
m
A
–300mA
C o l l ec t or C u r r e n t I
C
( A)
–200mA
–10
C o l l e c to r C u r r e n t I
C
( A)
–2
–10
–150mA
em
p)
e Te
mp)
(Cas
25˚C
–100mA
–5
–1
–5
Cas
eT
˚C (
I
B
=–20mA
–5 A
0
0
0
0
–1
–2
–3
–4
0
–0 .2
– 0. 4
– 0. 6
–0 . 8
– 1 .0
0
125
I
C
= – 10 A
–30˚
C (C
–50mA
–1
B a s e - E m i t t o r Vo l ta g e V
B E
( V)
ase
Tem
p)
–2
Co ll e ct o r -Em i t te r V ol tag e V
C E
(V )
B as e C ur r en t I
B
( A)
h
FE
– I
C
Characteristics
(Typical)
(V
C E
= – 4 V )
300
DC C u r r e nt Ga i n h
FE
h
F E
– I
C
Temperature Characteristics
(Typical)
( V
C E
= – 4 V)
200
DC C u r r e nt Ga i n h
FE
Transient Thermal Resistance
θ
j-a
( ˚ C / W )
3
θ
j- a
– t Characteristics
12 5˚ C
100
25 ˚ C
– 30 ˚ C
50
1
0. 5
100
Typ
10
–0.02
– 0. 1
–0. 5
–1
–5 –10 –15
20
–0.02
–0 .1
– 0. 5
–1
–5
– 10 – 15
0. 1
1
10
100
T i m e t( m s )
1 0 0 0 20 0 0
C ol l e ct o r C u rre nt I
C
(A )
Co l le c to r Cu r r en t I
C
( A)
f
T
– I
E
Characteristics
(Typical)
(V
C E
=– 1 2 V )
60
–40
Safe Operating Area
(Single Pulse)
130
10
ms
Pc – T a Derating
–10
Cut- off Fr e q u e n c y f
T
( M H
Z
)
Ty
p
DC
Ma xi mu m Po we r Di s s i p at i o n P
C
( W )
100
W
40
C olle c tor C u r r e n t I
C
( A )
–5
ith
In
fin
ite
he
at
–1
–0.5
Without Heatsink
Natural Cooling
1. 2 SA13 86
2. 2SA1 3 86 A
–0.1
1
2
–2 0 0
si
nk
50
20
0
0.02
0.1
1
10
– 0 .0 5
–3
–1 0
– 50
–1 00
3.5
0
W i t h o ut H e at s i n k
0
25
50
75
1 00
12 5
150
Emi t t e r Cur ren t I
E
(A)
C ol l ec t or - Em i t te r Vol t ag e V
C E
( V)
A m b i en t T e m p e r a tu r e T a ( ˚ C )
18
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