NUD3124, SZNUD3124
Automotive Inductive Load
Driver
This micro−integrated part provides a single component solution to
switch inductive loads such as relays, solenoids, and small DC motors
without the need of a free−wheeling diode. It accepts logic level
inputs, thus allowing it to be driven by a large variety of devices
including logic gates, inverters, and microcontrollers.
Features
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MARKING DIAGRAMS
3
1
2
SOT−23
CASE 318
STYLE 21
JW6 MG
G
•
Provides Robust Interface between D.C. Relay Coils and Sensitive
•
•
•
•
•
•
Logic
Capable of Driving Relay Coils Rated up to 150 mA at 12 Volts
Replaces 3 or 4 Discrete Components for Lower Cost
Internal Zener Eliminates Need for Free−Wheeling Diode
Meets Load Dump and other Automotive Specs
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These are Pb−Free Devices
JW6 = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
6
1
SC−74
CASE 318F
STYLE 7
JW6 MG
G
Typical Applications
•
Automotive and Industrial Environment
•
Drives Window, Latch, Door, and Antenna Relays
Benefits
JW6 = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NUD3124LT1G
SZNUD3124LT1G
Package
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SC−74
(Pb−Free)
SC−74
(Pb−Free)
Shipping
†
3000 / Tape &
Reel
3000 / Tape &
Reel
3000 / Tape &
Reel
3000 / Tape &
Reel
•
•
•
•
Reduced PCB Space
Standardized Driver for Wide Range of Relays
Simplifies Circuit Design and PCB Layout
Compliance with Automotive Specifications
NUD3124DMT1G
SZNUD3124DMT1G
Drain (3)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
INTERNAL CIRCUIT DIAGRAMS
Drain (3)
Drain (6)
Gate (1)
10 k
100 K
Gate (2)
10 k
100 K
10 k
100 K
Gate (5)
Source (2)
CASE 318
Source (1)
Source (4)
CASE 318F
©
Semiconductor Components Industries, LLC, 2002
October, 2016
−
Rev. 13
1
Publication Order Number:
NUD3124/D
NUD3124, SZNUD3124
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise specified)
Symbol
V
DSS
V
GSS
I
D
E
Z
Drain−to−Source Voltage – Continuous
(T
J
= 125°C)
Gate−to−Source Voltage – Continuous
(T
J
= 125°C)
Drain Current – Continuous
(T
J
= 125°C)
Single Pulse Drain−to−Source Avalanche Energy
(For Relay’s Coils/Inductive Loads of 80
W
or Higher)
(T
J
Initial = 85°C)
Peak Power Dissipation, Drain−to−Source (Notes 1 and 2)
(T
J
Initial = 85°C)
Load Dump Suppressed Pulse, Drain−to−Source (Notes 3 and 4)
(Suppressed Waveform: V
s
= 45 V, R
SOURCE
= 0.5
W,
T = 200 ms)
(For Relay’s Coils/Inductive Loads of 80
W
or Higher)
(T
J
Initial = 85°C)
Inductive Switching Transient 1, Drain−to−Source
(Waveform: R
SOURCE
= 10
W,
T = 2.0 ms)
(For Relay’s Coils/Inductive Loads of 80
W
or Higher)
(T
J
Initial = 85°C)
Inductive Switching Transient 2, Drain−to−Source
(Waveform: R
SOURCE
= 4.0
W,
T = 50
ms)
(For Relay’s Coils/Inductive Loads of 80
W
or Higher)
(T
J
Initial = 85°C)
Reverse Battery, 10 Minutes (Drain−to−Source)
(For Relay’s Coils/Inductive Loads of 80
W
or more)
Dual Voltage Jump Start, 10 Minutes (Drain−to−Source)
Human Body Model (HBM)
According to EIA/JESD22/A114 Specification
Rating
Value
28
12
150
250
Unit
V
V
mA
mJ
P
PK
E
LD1
20
80
W
V
E
LD2
100
V
E
LD3
300
V
Rev−Bat
Dual−Volt
ESD
−14
28
2,000
V
V
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Nonrepetitive current square pulse 1.0 ms duration.
2. For different square pulse durations, see Figure 2.
3. Nonrepetitive load dump suppressed pulse per Figure 3.
4. For relay’s coils/inductive loads higher than 80
W,
see Figure 4.
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2
NUD3124, SZNUD3124
THERMAL CHARACTERISTICS
Symbol
T
A
T
J
T
STG
P
D
P
D
R
qJA
Operating Ambient Temperature
Maximum Junction Temperature
Storage Temperature Range
Total Power Dissipation (Note 5)
Derating above 25°C
Total Power Dissipation (Note 5)
Derating above 25°C
Thermal Resistance Junction–to–Ambient (Note 5)
SOT−23
SC−74
SOT−23
SC−74
Rating
Value
−40
to 125
150
−65
to 150
225
1.8
380
3.0
556
329
Unit
°C
°C
°C
mW
mW/°C
mW
mW/°C
°C/W
5. Mounted onto minimum pad board.
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3
NUD3124, SZNUD3124
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Characteristic
OFF CHARACTERISTICS
Drain to Source Sustaining Voltage
(I
D
= 10 mA)
Drain to Source Leakage Current
(V
DS
= 12 V, V
GS
= 0 V)
(V
DS
= 12 V, V
GS
= 0 V, T
J
= 125°C)
(V
DS
= 28 V, V
GS
= 0 V)
(V
DS
= 28 V, V
GS
= 0 V, T
J
= 125°C)
Gate Body Leakage Current
(V
GS
= 3.0 V, V
DS
= 0 V)
(V
GS
= 3.0 V, V
DS
= 0 V, T
J
= 125°C)
(V
GS
= 5.0 V, V
DS
= 0 V)
(V
GS
= 5.0 V, V
DS
= 0 V, T
J
= 125°C)
ON CHARACTERISTICS
Gate Threshold Voltage
(V
GS
= V
DS
, I
D
= 1.0 mA)
(V
GS
= V
DS
, I
D
= 1.0 mA, T
J
= 125°C)
Drain to Source On−Resistance
(I
D
= 150 mA, V
GS
= 3.0 V)
(I
D
= 150 mA, V
GS
= 3.0 V, T
J
= 125°C)
(I
D
= 150 mA, V
GS
= 5.0 V)
(I
D
= 150 mA, V
GS
= 5.0 V, T
J
= 125°C)
Output Continuous Current
(V
DS
= 0.25 V, V
GS
= 3.0 V)
(V
DS
= 0.25 V, V
GS
= 3.0 V, T
J
= 125°C)
Forward Transconductance
(V
DS
= 12 V, I
D
= 150 mA)
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 12 V, V
GS
= 0 V, f = 10 kHz)
Output Capacitance
(V
DS
= 12 V, V
GS
= 0 V, f = 10 kHz)
Transfer Capacitance
(V
DS
= 12 V, V
GS
= 0 V, f = 10 kHz)
SWITCHING CHARACTERISTICS
Propagation Delay Times:
High to Low Propagation Delay; Figure 1, (V
DS
= 12 V, V
GS
= 3.0 V)
Low to High Propagation Delay; Figure 1, (V
DS
= 12 V, V
GS
= 3.0 V)
High to Low Propagation Delay; Figure 1, (V
DS
= 12 V, V
GS
= 5.0 V)
Low to High Propagation Delay; Figure 1, (V
DS
= 12 V, V
GS
= 5.0 V)
Transition Times:
Fall Time; Figure 1, (V
DS
= 12 V, V
GS
= 3.0 V)
Rise Time; Figure 1, (V
DS
= 12 V, V
GS
= 3.0 V)
Fall Time; Figure 1, (V
DS
= 12 V, V
GS
= 5.0 V)
Rise Time; Figure 1, (V
DS
= 12 V, V
GS
= 5.0 V)
t
PHL
t
PLH
t
PHL
t
PLH
t
f
t
r
t
f
t
r
−
−
−
−
890
912
324
1280
−
−
−
−
ns
ns
Ciss
Coss
Crss
−
−
−
32
21
8.0
−
−
−
pf
pf
pf
V
GS(th)
1.3
1.3
−
−
−
−
150
140
−
1.8
−
−
−
−
−
200
−
500
2.0
2.0
1.4
1.7
0.8
1.1
−
−
−
V
V
BRDSS
I
DSS
28
34
38
V
mA
Symbol
Min
Typ
Max
Unit
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.5
1.0
50
80
60
80
90
110
I
GSS
mA
R
DS(on)
W
I
DS(on)
mA
g
FS
mmho
−
−
−
−
2086
708
556
725
−
−
−
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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4
NUD3124, SZNUD3124
TYPICAL PERFORMANCE CURVES
(T
J
= 25°C unless otherwise noted)
V
IH
V
in
50%
0V
t
PHL
90%
V
out
50%
10%
V
OL
t
r
t
PLH
V
OH
t
f
Figure 1. Switching Waveforms
25
P
pk
, PEAK SURGE POWER (W)
20
15
10
5
0
1
10
P
W
, PULSE WIDTH (ms)
100
Figure 2. Maximum Non−repetitive Surge
Power versus Pulse Width
Load Dump Pulse Not Suppressed:
V
R
= 13.5 V Nominal
±10%
V
S
= 60 V Nominal
±10%
T = 300 ms Nominal
±10%
T
R
= 1
−
10 ms
±10%
Load Dump Pulse Suppressed:
NOTE: Max. Voltage DUT is exposed to is
NOTE:
approximately 45 V.
V
S
= 30 V
±20%
T = 150 ms
±20%
T
R
90%
10% of Peak;
Reference = V
R
, I
R
10%
V
R
, I
R
T
VS
Figure 3. Load Dump Waveform Definition
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