DMN3032LFDBQ
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
Max
30mΩ @ V
GS
= 10V
30V
42mΩ @ V
GS
= 4.5V
5.2A
I
D
Max
T
A
= +25°C
6.2A
Features and Benefits
100% Unclamped Inductive Switching – Ensures More Reliable
and Robust Application
Low On-Resistance – Minimizes Power Losses
Low Gate Charge – Minimizes Switching Losses
Small Form Factor Low Profile Package – Increased Power
Density
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Description and Applications
This MOSFET is designed to meet the stringent requirements of
Automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and ideal for use in:
Body Control Electronics
Power Management Functions
DC-DC Converters
Mechanical Data
Case: U-DFN2020-6
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
e4
Terminals Connections: See Diagram Below
Weight: 0.0065 grams (Approximate)
U-DFN2020-6
S2
D2
D1
D2
G1
S1
Pin1
Bottom View
G2
D1
D1
D2
G1
S1
G2
S2
Internal Schematic
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
Ordering Information
(Notes 4 & 5)
Part Number
DMN3032LFDBQ-7
DMN3032LFDBQ-13
Notes:
Case
U-DFN2020-6
U-DFN2020-6
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
N5 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: C = 2015)
M = Month (ex: 9 = September)
N5
Date Code Key
Year
Code
Month
Code
2015
C
Jan
1
Feb
2
2016
D
Mar
3
Apr
4
YM
2017
E
May
5
2018
F
Jun
6
Jul
7
2019
G
Aug
8
Sep
9
2020
H
Oct
O
Nov
N
2021
I
Dec
D
October 2015
© Diodes Incorporated
DMN3032LFDBQ
Document number: DS37981 Rev. 2 - 2
1 of 7
www.diodes.com
DMN3032LFDBQ
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Steady
State
Maximum Continuous Body Diode Forward Current (Note 7)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current (Note 8) L = 0.1mH
Avalanche Energy (Note 8) L = 0.1mH
Continuous Drain Current (Note 7) V
GS
= 10V
T
A
= +25°C
T
A
= +75°C
Symbol
V
DSS
V
GSS
I
D
I
S
I
DM
I
AS
E
AS
Value
30
±20
6.2
5.0
2
25
12
10
Unit
V
V
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
Steady state
t<10s
Steady state
t<10s
Symbol
P
D
R
JA
P
D
R
JA
R
JC
T
J,
T
STG
Value
1.0
127
75
1.7
72
43
9
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Symbol
BV
DSS
I
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
Min
30
-
-
-
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
1.5
25
30
0.75
500
52
44
2.3
5.0
10.6
1.3
1.8
2.2
2.6
9.7
2.0
Max
-
1.0
100
±100
2.0
30
42
1.2
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V
μA
μA
nA
V
mΩ
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 30V, V
GS
= 0V
V
DS
= 30V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 5.8A
V
GS
= 4.5V, I
D
= 4.8A
V
GS
= 0V, I
S
= 1A
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DS
= 15V, I
D
= 5.8A
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
J
= +25°C
Zero Gate Voltage Drain Current T
J
= +150°C (Note 10)
Gate-Source Leakage
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
V
DD
= 15V, V
GS
= 10V,
R
L
= 2.6Ω, R
G
= 3Ω
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
8. I
AS
and E
AS
ratings are based on low frequency and duty cycles to keep T
J
= +25°C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
DMN3032LFDBQ
Document number: DS37981 Rev. 2 - 2
2 of 7
www.diodes.com
October 2015
© Diodes Incorporated
DMN3032LFDBQ
30.0
V
GS
=4.0V
25.0
I
D
, DRAIN CURRENT (A)
V
GS
=10.0V
V
GS
=3.5V
20.0
V
GS
=4.5V
15.0
V
GS
=3.0V
I
D
, DRAIN CURRENT (A)
20
18
16
14
12
10
8
6
4
2
V
GS
=2.0V
0.0
0
1
2
3
4
5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(W)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(W)
0.05
0.1
I
D
=3.6A
0.08
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
T
A
=150℃
T
A
=125℃
T
A
=85℃
T
A
=25℃
T
A
=-55℃
V
DS
=5V
10.0
V
GS
=2.5V
5.0
0.04
V
GS
=4.5V
0.03
V
GS
=10V
0.06
0.02
0.04
0.01
0.02
I
D
=2.8A
0
1
3
5
7
9
11
13
15
17
19
21
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
0
2
4
6
8
10
12
14
16
18
20
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (W)
0.045
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
V
GS
= 10V
150℃
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
0.05
1.8
1.6
1.4
1.2
V
GS
=4.5V, I
D
=3.0A
1
0.8
0.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
V
GS
=10V, I
D
=5.0A
125℃
85℃
25℃
-55℃
2
4
6
8
10
12
14
16
18
20
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current
and Temperature
DMN3032LFDBQ
Document number: DS37981 Rev. 2 - 2
3 of 7
www.diodes.com
October 2015
© Diodes Incorporated
DMN3032LFDBQ
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (W)
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
V
GS
=10V, I
D
=5.0A
V
GS
=4.5V, I
D
=3.0A
2
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
1.8
1.6
1.4
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs Junction
Temperature
I
D
=1mA
I
D
=250mA
20
18
I
S
, SOURCE CURRENT (A)
16
14
12
10
8
6
4
2
0
0
0.3
0.6
0.9
1.2
1.5
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
V
GS
=0V, T
A
=25℃
V
GS
=0V,
T
A
=-55℃
V
GS
=0V, T
A
=125℃
V
GS
=0V, T
A
=85℃
V
GS
=0V, T
A
=150℃
C
T
, JUNCTION CAPACITANCE (pF)
1000
f=1MHz
C
iss
100
C
oss
C
rss
10
0
5
10
15
20
25
30
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
10
V
GS
, GATE-SOURCE VOLTAGE (V)
I
DSS
, LEAKAGE CURRENT (nA)
10000
T
A
=150℃
8
1000
T
A
=125℃
6
V
DS
=15V, I
D
=3.6A
100
T
A
=85℃
10
T
A
=25℃
1
4
2
0
0
2
4
6
8
10
12
Qg,TOTAL GATE CHARGE (nC)
Figure 11. Gate Charge
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0.1
0
5
10
15
20
25
30
V
DS
, Drain-SOURCE VOLTAGE (V)
Figure 12. Typical Drain-Source Leakge Current vs.
Voltage
October 2015
© Diodes Incorporated
DMN3032LFDBQ
Document number: DS37981 Rev. 2 - 2
DMN3032LFDBQ
100
R
DS(ON)
Limited
P
W
=100µs
10
I
D
, DRAIN CURRENT (A)
DC
1
P
W
=10s
P
W
=1s
P
W
=100ms
P
W
=10ms
P
W
=1ms
0.1
0.01
T
J(Max)
=150℃
T
A
=25℃
Single Pulse
DUT on 1*MRP board
V
GS
=4.5V
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 13. SOA, Safe Operation Area
1
r(t), TRANSIENT THERMAL RESISTANCE
D=0.5
D=0.5
D=0.3
0.1
D=0.1
D=0.05
D=0.02
D=0.02
0.01
D=0.01
D=0.01
D=0.005
D=Single Pulse
0.001
1E-05
0.0001
0.001
0.01
0.1
1
D=0.7
D=0.9
R
θJA
(t)=r(t) **R
θJA
R
θJA
(t)=r(t) R
θJA
R
θJA
=124℃/W
R
θJA
=1204℃/W
Duty Cycle, D=t1 // t2
Duty Cycle, D=t1 t2
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 14. Transient Thermal Resistance
DMN3032LFDBQ
Document number: DS37981 Rev. 2 - 2
5 of 7
www.diodes.com
October 2015
© Diodes Incorporated
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