1SMB5.0AT3G Series,
SZ1SMB5.0AT3G Series
600 Watt Peak Power Zener
Transient Voltage
Suppressors
Unidirectional
The SMB series is designed to protect voltage sensitive
components from high voltage, high energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. The SMB series is supplied in
ON Semiconductor’s exclusive, cost-effective, highly reliable
SURMETIC
package and is ideally suited for use in
communication systems, automotive, numerical controls, process
controls, medical equipment, business machines, power supplies and
many other industrial/consumer applications.
Features
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PLASTIC SURFACE MOUNT
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSORS
5.0 V
−
170 V,
600 W PEAK POWER
SMB
CASE 403A
PLASTIC
Working Peak Reverse Voltage Range
−
5.0 V to 170 V
Standard Zener Breakdown Voltage Range
−
6.7 V to 199 V
Peak Power
−
600 W @ 1.0 ms
ESD Rating of Class 3 (> 16 kV) per Human Body Model
Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage < 5.0
mA
Above 10 V
UL 497B for Isolated Loop Circuit Protection
Response Time is Typically < 1.0 ns
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
Pb−Free Packages are Available*
Mechanical Characteristics
CASE:
Void-free, transfer-molded, thermosetting plastic
FINISH:
All external surfaces are corrosion resistant and leads are
Cathode
Anode
MARKING DIAGRAM
AYWW
xx
G
G
A
Y
WW
xx
G
= Assembly Location
= Year
= Work Week
= Device Code (Refer to page 3)
= Pb−Free Package
(Note: Microdot may be in either location)
readily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
ORDERING INFORMATION
Device
1SMBxxxAT3G
SZ1SMBxxxAT3G
Package
SMB
(Pb−Free)
SMB
(Pb−Free)
Shipping
†
2,500 /
Tape & Reel
2,500 /
Tape & Reel
260C for 10 Seconds
LEADS:
Modified L−Bend providing more contact area to bond pads
POLARITY:
Cathode indicated by polarity band
MOUNTING POSITION:
Any
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2012
See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 of
this data sheet.
February, 2012
−
Rev. 13
1
Publication Order Number:
1SMB5.0AT3/D
1SMB5.0AT3G Series, SZ1SMB5.0AT3G Series
MAXIMUM RATINGS
Rating
Peak Power Dissipation (Note 1) @ T
L
= 25C, Pulse Width = 1 ms
DC Power Dissipation @ T
L
= 75C Measured Zero Lead Length (Note 2)
Derate Above 75C
Thermal Resistance from Junction−to−Lead
DC Power Dissipation (Note 3) @ T
A
= 25C
Derate Above 25C
Thermal Resistance from Junction−to−Ambient
Forward Surge Current (Note 4) @ T
A
= 25C
Operating and Storage Temperature Range
Symbol
P
PK
P
D
R
qJL
P
D
R
qJA
I
FSM
T
J
, T
stg
Value
600
3.0
40
25
0.55
4.4
226
100
−65
to +150
Unit
W
W
mW/C
C/W
W
mW/C
C/W
A
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 10 X 1000
ms,
non−repetitive.
2. 1 in square copper pad, FR−4 board.
3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless
otherwise noted, V
F
= 3.5 V Max. @ I
F
(Note 5) = 30 A)
Symbol
I
PP
V
C
V
RWM
I
R
V
BR
I
T
I
F
V
F
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V
RWM
Breakdown Voltage @ I
T
Test Current
Forward Current
Forward Voltage @ I
F
V
C
V
BR
V
RWM
I
F
I
I
R
V
F
I
T
V
I
PP
5. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms,
non−repetitive duty cycle.
Uni−Directional TVS
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2
1SMB5.0AT3G Series, SZ1SMB5.0AT3G Series
ELECTRICAL CHARACTERISTICS
V
RWM
(Note 6)
V
5.0
6.0
6.5
7.0
7.5
8.0
8.5
9.0
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
43
45
48
51
54
58
60
64
70
75
85
90
100
110
120
130
150
160
170
Breakdown Voltage
I
R
@ V
RWM
mA
800
800
500
500
100
50
10
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
55.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
V
BR
(Note 7)
Volts
Min
6.40
6.67
7.22
7.78
8.33
8.89
9.44
10.0
11.1
12.2
13.3
14.4
15.6
16.7
17.8
18.9
20.0
22.2
24.4
26.7
28.9
31.1
33.3
36.7
40.0
44.4
47.8
50.0
53.3
56.7
60.0
64.4
66.7
71.1
77.8
83.3
94.4
100
111
122
133
144
167
178
189
Nom
6.7
7.02
7.6
8.19
8.77
9.36
9.92
10.55
11.7
12.85
14
15.15
16.4
17.6
18.75
19.9
21.05
23.35
25.65
28.1
30.4
32.75
35.05
38.65
42.1
46.75
50.3
52.65
56.1
59.7
63.15
67.8
70.2
74.85
81.9
87.7
99.2
105.5
117
128.5
140
151.5
176
187.5
199
Max
7.0
7.37
7.98
8.6
9.21
9.83
10.4
11.1
12.3
13.5
14.7
15.9
17.2
18.5
19.7
20.9
22.1
24.5
26.9
29.5
31.9
34.4
36.8
40.6
44.2
49.1
52.8
55.3
58.9
62.7
66.3
71.2
73.7
78.6
86
92.1
104
111
123
135
147
159
185
197
209
@ I
T
mA
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
V
C
@ I
PP
(Note 8)
V
C
V
9.2
10.3
11.2
12.0
12.9
13.6
14.4
15.4
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
69.4
72.7
77.4
82.4
87.1
93.6
96.8
103
113
121
137
146
162
177
193
209
243
259
275
I
PP
A
65.2
58.3
53.6
50.0
46.5
44.1
41.7
39.0
35.3
33.0
30.2
27.9
25.8
24.0
23.1
21.7
20.5
18.5
16.9
15.4
14.2
13.2
12.4
11.3
10.3
9.3
8.6
8.3
7.7
7.3
6.9
6.4
6.2
5.8
5.3
4.9
4.4
4.1
3.7
3.4
3.1
2.9
2.5
2.3
2.2
C
typ
(Note 9)
pF
2700
2300
2140
2005
1890
1780
1690
1605
1460
1345
1245
1160
1085
1020
965
915
870
790
730
675
630
590
555
510
470
430
400
385
365
345
330
310
300
280
260
245
220
210
190
175
160
150
135
125
120
Device*
1SMB5.0AT3G
1SMB6.0AT3G
1SMB6.5AT3G
1SMB7.0AT3G
1SMB7.5AT3G
1SMB8.0AT3G
1SMB8.5AT3G
1SMB9.0AT3G
1SMB10AT3G
1SMB11AT3G
1SMB12AT3G
1SMB13AT3G
1SMB14AT3G
1SMB15AT3G
1SMB16AT3G
1SMB17AT3G
1SMB18AT3G
1SMB20AT3G
1SMB22AT3G
1SMB24AT3G
1SMB26AT3G
1SMB28AT3G
1SMB30AT3G
1SMB33AT3G
1SMB36AT3G
1SMB40AT3G
1SMB43AT3G
1SMB45AT3G
1SMB48AT3G
1SMB51AT3G
1SMB54AT3G
1SMB58AT3G
1SMB60AT3G
1SMB64AT3G
1SMB70AT3G
1SMB75AT3G
1SMB85AT3G
1SMB90AT3G
1SMB100AT3G
1SMB110AT3G
1SMB120AT3G
1SMB130AT3G
1SMB150AT3G
1SMB160AT3G
1SMB170AT3G
Device
Marking
KE
KG
KK
KM
KP
KR
KT
KV
KX
KZ
LE
LG
LK
LM
LP
LR
LT
LV
LX
LZ
ME
MG
MK
MM
MP
MR
MT
MV
MX
MZ
NE
NG
NK
NM
NP
NR
NV
NX
NZ
PE
PG
PK
PM
PP
PR
6. A transient suppressor is normally selected according to the working peak reverse voltage (V
RWM
), which should be equal to or greater than
the DC or continuous peak operating voltage level.
7. V
BR
measured at pulse test current I
T
at an ambient temperature of 25C.
8. Surge current waveform per Figure 2 and derate per Figure 4 of the General Data
−
600 W at the beginning of this group.
9. Bias Voltage = 0 V, F = 1 MHz, T
J
= 25C
†Please see 1SMB10CAT3 to 1SMB78CAT3 for Bidirectional devices.
* Include SZ-prefix devices where applicable.
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3
1SMB5.0AT3G Series, SZ1SMB5.0AT3G Series
100
P
PK
, PEAK POWER (kW)
NONREPETITIVE
PULSE WAVEFORM
SHOWN IN FIGURE 2
10
t
r
10
ms
100
VALUE (%)
PEAK VALUE - I
PP
I
HALF VALUE -
PP
2
PULSE WIDTH (t
P
) IS DEFINED AS
THAT POINT WHERE THE PEAK
CURRENT DECAYS TO 50% OF
I
PP
.
1
50
t
P
0.1
0.1
ms
1
ms
10
ms
100
ms
1 ms
10 ms
0
0
1
2
3
t, TIME (ms)
4
5
t
P
, PULSE WIDTH
Figure 1. Pulse Rating Curve
Figure 2. Pulse Waveform
160
PEAK PULSE DERATING IN % OF
PEAK POWER OR CURRENT @ T = 25
C
A
140
120
10,000
1SMB5.0AT3G
1SMB10AT3G
100
1SMB48AT3G
1SMB170AT3G
T
J
= 25C
f = 1 MHz
100
80
60
40
20
0
0
25
50
75
100
125
150
T
A
, AMBIENT TEMPERATURE (C)
C, CAPACITANCE (pF)
1000
10
1
1
10
100
1000
BIAS VOLTAGE (VOLTS)
Figure 3. Pulse Derating Curve
Figure 4. Typical Junction Capacitance vs.
Bias Voltage
Z
in
V
in
LOAD
V
L
Figure 5. Typical Protection Circuit
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4
1SMB5.0AT3G Series, SZ1SMB5.0AT3G Series
APPLICATION NOTES
Response Time
In most applications, the transient suppressor device is
placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot
condition associated with the inductance of the device and
the inductance of the connection method. The capacitive
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the
transition from the operating voltage to the clamp voltage as
shown in Figure 6.
The inductive effects in the device are due to actual
turn-on time (time required for the device to go from zero
current to full current) and lead inductance. This inductive
effect produces an overshoot in the voltage across the
equipment or component being protected as shown in
Figure 7. Minimizing this overshoot is very important in the
application, since the main purpose for adding a transient
suppressor is to clamp voltage spikes. The SMB series have
a very good response time, typically < 1.0 ns and negligible
inductance. However, external inductive effects could
produce unacceptable overshoot. Proper circuit layout,
minimum lead lengths and placing the suppressor device as
close as possible to the equipment or components to be
protected will minimize this overshoot.
Some input impedance represented by Z
in
is essential to
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.
Duty Cycle Derating
The data of Figure 1 applies for non-repetitive conditions
and at a lead temperature of 25C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves
of Figure 8. Average power must be derated as the lead or
ambient temperature rises above 25C. The average power
derating curve normally given on data sheets may be
normalized and used for this purpose.
At first glance the derating curves of Figure 8 appear to be
in error as the 10 ms pulse has a higher derating factor than
the 10
ms
pulse. However, when the derating factor for a
given pulse of Figure 8 is multiplied by the peak power
value of Figure 1 for the same pulse, the results follow the
expected trend.
OVERSHOOT DUE TO
INDUCTIVE EFFECTS
V
in
(TRANSIENT)
V
L
V
V
in
(TRANSIENT)
V
L
V
V
in
t
d
t
D
= TIME DELAY DUE TO CAPACITIVE EFFECT
t
t
Figure 6.
1
0.7
0.5
DERATING FACTOR
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
10
ms
0.1 0.2
0.5
1
2
5
10
D, DUTY CYCLE (%)
20
Figure 7.
PULSE WIDTH
10 ms
1 ms
100
ms
50 100
Figure 8. Typical Derating Factor for Duty Cycle
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