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SZBZX84C15ET1G

产品描述Energy Rated Zeners in SOT-23 15V 225 W, SOT-23 (TO-236) 3 LEAD, 3000-REEL
产品类别分立半导体    二极管   
文件大小226KB,共7页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
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SZBZX84C15ET1G概述

Energy Rated Zeners in SOT-23 15V 225 W, SOT-23 (TO-236) 3 LEAD, 3000-REEL

SZBZX84C15ET1G规格参数

参数名称属性值
Brand NameON Semiconductor
是否无铅不含铅
厂商名称ON Semiconductor(安森美)
针数3
制造商包装代码318-08
Reach Compliance Codecompliant
ECCN代码EAR99
Factory Lead Time4 weeks
Is SamacsysN
二极管类型ZENER DIODE
JESD-609代码e3
湿度敏感等级1
峰值回流温度(摄氏度)NOT SPECIFIED
端子面层Tin (Sn)
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

文档预览

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BZX84CxxxET1G Series,
SZBZX84CxxxET1G Series
Zener Voltage Regulators
250 mW SOT−23 Surface Mount
This series of Zener diodes is offered in the convenient, surface
mount plastic SOT−23 package. These devices are designed to provide
voltage regulation with minimum space requirement. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.
Specification Features
www.onsemi.com
250 mW Rating on FR−4 or FR−5 Board
Zener Breakdown Voltage Range
2.4 V to 75 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (> 16 kV) per Human Body Model
Peak Power
225 W (8
X
20
ms)
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
Mechanical Characteristics
CASE:
Void-free, transfer-molded, thermosetting plastic case
FINISH:
Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
SOT−23
CASE 318
STYLE 8
3
Cathode
1
Anode
MARKING DIAGRAM
xxx M
G
G
1
xxx
M
G
= Device Code
= Date Code*
= Pb−Free Package
260°C for 10 Seconds
POLARITY:
Cathode indicated by polarity band
FLAMMABILITY RATING:
UL 94 V−0
MAXIMUM RATINGS
Rating
Peak Power Dissipation @ 20
ms
(Note 1)
@ T
L
25°C
Total Power Dissipation on FR−5 Board,
(Note 2) @ T
A
= 25°C
Derated above 25°C
Thermal Resistance, Junction−to−Ambient
Total Power Dissipation on Alumina
Substrate, (Note 3) @ T
A
= 25°C
Derated above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature Range
Symbol
P
pk
P
D
R
qJA
P
D
R
qJA
T
J
, T
stg
Max
225
Unit
W
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
ORDERING INFORMATION
Device
Package
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
Shipping
3,000 /
Tape & Reel
3,000 /
Tape & Reel
10,000 /
Tape & Reel
10,000 /
Tape & Reel
250
2.0
500
300
2.4
417
−65
to
+150
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
BZX84CxxxET1G
SZBZX84CxxxET1G
BZX84CxxxET3G
SZBZX84CxxxET3G
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Nonrepetitive current pulse per Figure 9.
2. FR−5 = 1.0 X 0.75 X 0.62 in.
3. Alumina = 0.4 X 0.3 X 0.024 in, 99.5% alumina.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 of
this data sheet.
©
Semiconductor Components Industries, LLC, 2003
October, 2016
Rev. 10
1
Publication Order Number:
BZX84C2V4ET1/D

 
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