RB151-RB157
SILICON BRIDGE RECTIFIERS
RB-15
A
RB15
WO
.150(3.8)
.130(3.3)
.305(7.75)
.265(6.73)
.220(6.73)
.180(4.6)
B
.360(9.1)
.340(8.6)
.395(10.0)
.355(9.0)
.340(8.6)
.300(7.6)
FEATURES
Rating to 1000V PRVP
Surge overload rating to 40 Amperes peak
Glass passivated chip junctions
Reliable low cost construction utilizing molded
plastic technique results in inexpensive product
Lead solderable per MIL-STD-202 method 208
Lead: silver plated copper, solderde plated
Plastic material has UL flammability classification94V-O
.220
.180
(5.6)
(4.6)
POS.
LEAD
MIN
1.27(32.3)
A
B
WOM
MIN
1.20(30.5)
.032(.81)
.028(.71)
DIA
.220
.180
(5.6)
(4.6)
inch(mm)
Maximum Ratings
(@TA = 25°C unless otherwise specified)
Characteristic
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Reverse Voltage
Maximum DC Blocking Voltage
Maximum average forward Output current
@T
A
=40℃
Peak forward surge current
8.3ms single half-sine-wave
superimposed on rated load
I
FSM
50
A
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
RB151
50
35
50
RB152
100
75
100
RB153
200
140
200
RB154
400
280
400
1.5
RB155
600
420
600
RB156
800
560
800
RB157
1000
700
1000
UNITS
V
V
V
A
I²t Rating for fusing @Tj=25℃
I²t
10
A²S
Thermal Characteristics
Characteristic
Operating junction temperature range
Storage temperature range
Symbol
T
J
T
STG
RB151
RB152
RB153
RB154
-55 -- +150
-55 -- +150
RB155
RB156
RB157
UNITS
℃
℃
Electrical Characteristics
(@TA = 25°C unless otherwise specified)
Characteristic
Maximum instantaneous forward voltage
at 1.5A
Maximum reverse current
@T
A
=25℃
Symbol
V
F
RB151
RB152
RB153
RB154
1.0
5.0
0.5
RB155
RB156
RB157
UNITS
V
μ
A
mA
at rated DC blocking voltage @T
A
=100℃
I
R
ht
t
p
:
//
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