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MSP1N6152US

产品描述Trans Voltage Suppressor Diode, 1500W, 20.6V V(RWM), Bidirectional, 1 Element, Silicon, HERMETIC SEALED, GLASS, D-5C, G-MELF-2
产品类别分立半导体    二极管   
文件大小169KB,共5页
制造商Microsemi
官网地址https://www.microsemi.com
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MSP1N6152US概述

Trans Voltage Suppressor Diode, 1500W, 20.6V V(RWM), Bidirectional, 1 Element, Silicon, HERMETIC SEALED, GLASS, D-5C, G-MELF-2

MSP1N6152US规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Microsemi
零件包装代码MELF
包装说明O-LELF-R2
针数2
Reach Compliance Codeunknown
ECCN代码EAR99
Is SamacsysN
其他特性HIGH RELIABILITY
最小击穿电压24.42 V
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码O-LELF-R2
JESD-609代码e0
最大非重复峰值反向功率耗散1500 W
元件数量1
端子数量2
最高工作温度175 °C
最低工作温度-55 °C
封装主体材料GLASS
封装形状ROUND
封装形式LONG FORM
峰值回流温度(摄氏度)NOT SPECIFIED
极性BIDIRECTIONAL
最大功率耗散3 W
认证状态Not Qualified
参考标准MIL-19500
最大重复峰值反向电压20.6 V
表面贴装YES
技术AVALANCHE
端子面层TIN LEAD
端子形式WRAP AROUND
端子位置END
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

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1N6103US thru 1N6137AUS
and 1N6139US thru 1N6173AUS
SCOTTSDALE DIVISION
Voidless-Hermetically-Sealed Surface
Mount Bidirectional Transient Suppressors
DESCRIPTION
This surface mount series of industry recognized voidless-hermetically-
sealed Bidirectional Transient Voltage Suppressor (TVS) designs is
military qualified to MIL-PRF-19500/516 and are ideal for high-reliability
applications where a failure cannot be tolerated. They provide a Working
Peak “Standoff” Voltage selection from 5.2 to 152 Volts with two package
sizes for 500 W and 1500 W ratings. They are very robust in hard-glass
construction and also use an internal metallurgical bond identified as
Category I for high-reliability applications. Both of these are also military
qualified to MIL-PRF-19500/516 and are available as both a non suffix part
and an “A” suffix part involving different voltage tolerances as further
described in note 4 on page 2. These devices are also available in axial-
leaded packages for thru-hole mounting by deleting the “US” suffix (see
separate data sheet for 1N6103 thru 1N6173A). Microsemi also offers
numerous other TVS products to meet higher and lower peak pulse power
and voltage ratings in both through-hole and surface-mount packages.
APPEARANCE
Package “E”
(or “D-5B”)
WWW .
Microsemi
.C
OM
Package “G”
(or “D-5C”)
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
FEATURES
High surge current and peak pulse power provides
transient voltage protection for sensitive circuits
Triple-layer passivation
Internal “Category
I”
metallurgical bonds
Voidless hermetically sealed glass package
JAN/TX/TXV military qualifications available per MIL-PRF-
19500/516 by adding JAN, JANTX, or JANTXV prefix
(consult factory for 1N6103US and 1N6138US)
JANS available for 1N6103AUS thru 1N6118AUS per
MIL-PRF-19500/516 as well as further options for
screening in accordance with MIL-PRF-19500 for JANS
on all others in this series by using a “MSP” prefix, e.g.
MSP6119AUS, MSP6143AUS, etc.
Axial-leaded equivalents also available (see separate
data sheet for 1N6103 thru 1N6173)
APPLICATIONS / BENEFITS
Military and other high reliability transient protection
Extremely robust construction
Extensive range in Working Peak “Standoff”
Voltage (V
WM
) from 5.7 to 152 V
Available as either 500 W or 1500 W Peak Pulse
Power (P
PP
) using two different size packages
ESD and EFT protection per IEC6100-4-2 and
IEC61000-4-4 respectively
Secondary lightning protection per select levels in
IEC61000-4-5
Square-end-cap terminals for easy placement
Nonsensitive to ESD per MIL-STD-750 Method
1020
Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
CASE: Hermetically sealed voidless hard glass with
Operating (T
J
) & Storage Temperature: -55
o
C to +175
o
C
o
Tungsten slugs
Peak Pulse Power (P
PP
) at 25 C: 500 W for 1N6103US to
TERMINATIONS: End caps are Copper with
1N6137AUS and 1500 W for 1N6139US to 1N6173AUS @
Tin/Lead (Sn/Pb) finish. Note Previous inventory
10/1000 µs (also see Figures 1,2 and 3)
had solid Silver (Ag) with Tin/Lead (Sn/Pb) finish.
Impulse repetition rate (duty factor): 0.01%
MARKING: None
Steady-State Power: 3.0 W for 1N6103US to 1N6137AUS
o
POLARITY: No polarity marking for these
and 5.0 W for 1N6139US to 1N6173AUS up to T
EC
= 150 C.
o
o
bidirectional TVSs
Linearly derate above T
EC
=150 C to zero at T
EC
=175 C.
Tape & Reel option: Standard per EIA-481-B
Steady-State Power: 2.0 W for 1N6103US to 1N6137AUS
o
and 3.0 W for 1N6139US to 1N6173AUS @ T
A
= 25 C (see
Weight: 539 mg for 500 Watt (E Package)
note and Figure 4 for linear derating at higher temperatures)
1100 mg for 1500 Watt (G Package)
o
Thermal Resistance (junction to endcap): 8.3 C/W for
See package dimensions and recommended pad
1N6103US to 1N6137AUS and 5.0
o
C/W for 1N6139US to
layouts on last page for both the “E” (D-5B) and “G”
1N6173AUS
(D-5C) size packages
o
Solder Temperatures: 260 C for 10 s (maximum)
NOTE:
Steady-state power ratings with reference to ambient are for PC boards where thermal resistance from
mounting point to ambient is sufficiently controlled where T
OP
or T
J(MAX)
is not exceeded
Copyright
©
2008
05-06-2008 REV D
1N6103US – 1N6137AUS
1N6139US – 1N6173AUS
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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