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MMSZ4694T1G

产品描述8.2 V Zener Diode Voltage Regulator, SOD-123 2 LEAD, 3000-REEL
产品类别分立半导体    二极管   
文件大小190KB,共7页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
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MMSZ4694T1G概述

8.2 V Zener Diode Voltage Regulator, SOD-123 2 LEAD, 3000-REEL

MMSZ4694T1G规格参数

参数名称属性值
Brand NameON Semiconductor
是否无铅不含铅
包装说明R-PDSO-G2
针数2
制造商包装代码425-04
Reach Compliance Codecompliant
ECCN代码EAR99
Factory Lead Time1 week
配置SINGLE
二极管元件材料SILICON
二极管类型ZENER DIODE
JESD-30 代码R-PDSO-G2
JESD-609代码e3
湿度敏感等级1
元件数量1
端子数量2
最高工作温度150 °C
最低工作温度-55 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
极性UNIDIRECTIONAL
最大功率耗散0.5 W
认证状态Not Qualified
标称参考电压8.2 V
表面贴装YES
技术ZENER
端子面层Tin (Sn)
端子形式GULL WING
端子位置DUAL
处于峰值回流温度下的最长时间40
最大电压容差5%
工作测试电流0.05 mA
Base Number Matches1

MMSZ4694T1G文档预览

MMSZ4xxxT1G Series,
SZMMSZ4xxxT1G Series
Zener Voltage Regulators
500 mW, Low I
ZT
SOD−123 Surface Mount
Three complete series of Zener diodes are offered in the convenient,
surface mount plastic SOD−123 package. These devices provide a
convenient alternative to the leadless 34−package style.
Features
www.onsemi.com
500 mW Rating on FR−4 or FR−5 Board
Wide Zener Reverse Voltage Range
1.8 V to 43 V
Low Reverse Current (I
ZT
)
50
mA
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (> 16 kV) per Human Body Model
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free and are RoHS Compliant*
Mechanical Characteristics:
CASE:
Void-free, transfer-molded, thermosetting plastic case
FINISH:
Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
SOD−123
CASE 425
STYLE 1
1
Cathode
2
Anode
MARKING DIAGRAM
1
xx M
G
G
260°C for 10 Seconds
POLARITY:
Cathode indicated by polarity band
FLAMMABILITY RATING:
UL 94 V−0
MAXIMUM RATINGS
Rating
Total Power Dissipation on FR−5 Board,
(Note 1) @ T
L
= 75°C
Derated above 75°C
Thermal Resistance, (Note 2)
Junction−to−Ambient
Thermal Resistance, (Note 2)
Junction−to−Lead
Junction and Storage Temperature Range
Symbol
P
D
Max
500
6.7
340
150
−55
to
+150
Units
mW
mW/°C
°C/W
°C/W
°C
xx
M
G
= Device Code (Refer to page 3)
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
MMSZ4xxxT1G
SZMMSZ4xxxT1G
MMSZ4xxxT3G
SZMMSZ4xxxT3G
Package
SOD−123
(Pb−Free)
SOD−123
(Pb−Free)
SOD−123
(Pb−Free)
SOD−123
(Pb−Free)
Shipping
3,000 /
Tape & Reel
3,000 /
Tape & Reel
10,000 /
Tape & Reel
10,000 /
Tape & Reel
R
qJA
R
qJL
T
J
, T
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 3.5 X 1.5 inches, using the minimum recommended footprint.
2. Thermal Resistance measurement obtained via infrared Scan Method.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 of
this data sheet.
©
Semiconductor Components Industries, LLC, 2013
April, 2018
Rev. 12
1
Publication Order Number:
MMSZ4678T1/D
MMSZ4xxxT1G Series, SZMMSZ4xxxT1G Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless
otherwise noted, V
F
= 0.9 V Max. @ I
F
= 10 mA)
Symbol
V
Z
I
ZT
I
R
V
R
I
F
V
F
Parameter
Reverse Zener Voltage @ I
ZT
Reverse Current
Reverse Leakage Current @ V
R
Reverse Voltage
Forward Current
Forward Voltage @ I
F
V
Z
V
R
I
R
V
F
I
ZT
V
I
F
I
Product parametric performance is indicated in the Electrical
Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical
Characteristics if operated under different conditions.
Zener Voltage Regulator
www.onsemi.com
2
MMSZ4xxxT1G Series, SZMMSZ4xxxT1G Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, V
F
= 0.9 V Max. @ I
F
= 10 mA)
Zener Voltage
(Note 3)
Device
Marking
CC
CD
CE
CF
CH
CJ
CK
CM
CN
CP
CG6
CT
CU
CV
CA
CX
CY
CZ
DC
DD
DE
DF
DH
DJ
DK
DM
DN
DP
DT
DU
DV
DA
DX
DY
EA
EC
ED
EE
EF
EH
EJ
V
Z
(Volts)
Min
1.71
1.90
2.09
2.28
2.565
2.85
3.13
3.42
3.70
4.09
4.09
4.47
4.85
5.32
5.89
6.46
7.13
7.79
8.27
8.65
9.50
10.45
11.40
12.35
13.30
14.25
15.20
16.15
17.10
18.05
19.00
20.90
22.80
23.75
25.65
26.60
28.50
31.35
34.20
37.05
40.85
Nom
1.8
2.0
2.2
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
8.7
9.1
10
11
12
13
14
15
16
17
18
19
20
22
24
25
27
28
30
33
36
39
43
Max
1.89
2.10
2.31
2.52
2.835
3.15
3.47
3.78
4.10
4.52
4.52
4.94
5.36
5.88
6.51
7.14
7.88
8.61
9.14
9.56
10.50
11.55
12.60
13.65
14.70
15.75
16.80
17.85
18.90
19.95
21.00
23.10
25.20
26.25
28.35
29.40
31.50
34.65
37.80
40.95
45.15
@ I
ZT
mA
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
mA
7.5
5
4
2
1
0.8
7.5
7.5
5
4
4
10
10
10
10
10
10
1
1
1
1
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
Leakage Current
I
R
@ V
R
Volts
1
1
1
1
1
1
1.5
2
2
2
2
3
3
4
5
5.1
5.7
6.2
6.6
6.9
7.6
8.4
9.1
9.8
10.6
11.4
12.1
12.9
13.6
14.4
15.2
16.7
18.2
19.0
20.4
21.2
22.8
25.0
27.3
29.6
32.6
Device*
MMSZ4678T1G
MMSZ4679T1G
MMSZ4680T1G
MMSZ4681T1G
MMSZ4682T1G
MMSZ4683T1G
MMSZ4684T1G
MMSZ4685T1G
MMSZ4686T1G
MMSZ4687T1G
SZMMSZ4687T1G
MMSZ4688T1G
MMSZ4689T1G
MMSZ4690T1G/T3G
MMSZ4691T1G
MMSZ4692T1G
MMSZ4693T1G
MMSZ4694T1G
MMSZ4695T1G
MMSZ4696T1G
MMSZ4697T1G
MMSZ4698T1G
MMSZ4699T1G
MMSZ4700T1G
MMSZ4701T1G
MMSZ4702T1G
MMSZ4703T1G
MMSZ4704T1G
MMSZ4705T1G
MMSZ4706T1G
MMSZ4707T1G
MMSZ4708T1G
MMSZ4709T1G
MMSZ4710T1G
MMSZ4711T1G
MMSZ4712T1G
MMSZ4713T1G
MMSZ4714T1G
MMSZ4715T1G
MMSZ4716T1G
MMSZ4717T1G
3. Nominal Zener voltage is measured with the device junction in thermal equilibrium at T
L
= 30°C
±1°C.
*Include SZ-prefix devices where applicable.
†MMSZ4703 and MMSZ4711 Not Available in 10,000/Tape & Reel
www.onsemi.com
3
MMSZ4xxxT1G Series, SZMMSZ4xxxT1G Series
TYPICAL CHARACTERISTICS
θ
VZ, TEMPERATURE COEFFICIENT (mV/
°
C)
θ
VZ, TEMPERATURE COEFFICIENT (mV/
°
C)
8
7
6
5
4
3
2
1
0
-1
-2
-3
V
Z
@ I
ZT
TYPICAL T
C
VALUES
100
TYPICAL T
C
VALUES
V
Z
@ I
ZT
10
2
3
4
5
6
7
8
9
10
V
Z
, NOMINAL ZENER VOLTAGE (V)
11
12
1
10
V
Z
, NOMINAL ZENER VOLTAGE (V)
100
Figure 1. Temperature Coefficients
(Temperature Range
55°C to +150°C)
Figure 2. Temperature Coefficients
(Temperature Range
55°C to +150°C)
1.2
P
D
, POWER DISSIPATION (WATTS)
1.0
0.8
0.6
0.4
0.2
0
P
D
versus T
L
1000
Ppk , PEAK SURGE POWER (WATTS)
RECTANGULAR
WAVEFORM, T
A
= 25°C
100
P
D
versus T
A
10
0
25
50
75
100
T, TEMPERATURE (5C)
125
150
1
0.1
1
10
PW, PULSE WIDTH (ms)
100
1000
Figure 3. Steady State Power Derating
Figure 4. Maximum Nonrepetitive Surge Power
1000
Z ZT, DYNAMIC IMPEDANCE (
Ω
)
I
Z
= 1 mA
100
T
J
= 25°C
I
Z(AC)
= 0.1 I
Z(DC)
f = 1 kHz
5 mA
20 mA
10
1
1
10
V
Z
, NOMINAL ZENER VOLTAGE
100
Figure 5. Effect of Zener Voltage on
Zener Impedance
www.onsemi.com
4
MMSZ4xxxT1G Series, SZMMSZ4xxxT1G Series
TYPICAL CHARACTERISTICS
1000
0 V BIAS
1 V BIAS
C, CAPACITANCE (pF)
100
BIAS AT
50% OF V
Z
NOM
10
T
A
= 25°C
1000
I R , LEAKAGE CURRENT (
μ
A)
100
10
1
0.1
0.01
+ 25°C
- 55°C
0
10
20
30
40
50
60
70
V
Z
, NOMINAL ZENER VOLTAGE (V)
80
90
+150°C
0.001
0.0001
1
1
10
V
Z
, NOMINAL ZENER VOLTAGE (V)
100
0.00001
Figure 6. Typical Capacitance
Figure 7. Typical Leakage Current
100
T
A
= 25°C
I Z , ZENER CURRENT (mA)
100
T
A
= 25°C
I Z , ZENER CURRENT (mA)
10
10
1
1
0.1
0.1
0.01
0
2
4
6
8
V
Z
, ZENER VOLTAGE (V)
10
12
0.01
10
30
50
70
V
Z
, ZENER VOLTAGE (V)
90
Figure 8. Zener Voltage versus Zener Current
(V
Z
Up to 12 V)
Figure 9. Zener Voltage versus Zener Current
(12 V to 91 V)
www.onsemi.com
5

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