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MLL14KESD11AE3

产品描述Trans Voltage Suppressor Diode, 4000W, 11V V(RWM), Bidirectional, 1 Element, Silicon, DO-213AB, ROHS COMPLIANT, HERMETIC SEALED, GLASS, MELF-2
产品类别分立半导体    二极管   
文件大小162KB,共4页
制造商Microsemi
官网地址https://www.microsemi.com
标准
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MLL14KESD11AE3概述

Trans Voltage Suppressor Diode, 4000W, 11V V(RWM), Bidirectional, 1 Element, Silicon, DO-213AB, ROHS COMPLIANT, HERMETIC SEALED, GLASS, MELF-2

MLL14KESD11AE3规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Microsemi
零件包装代码DO-213AB
包装说明O-LELF-R2
针数2
Reach Compliance Codecompliant
ECCN代码EAR99
Is SamacsysN
最小击穿电压12.2 V
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码DO-213AB
JESD-30 代码O-LELF-R2
JESD-609代码e3
最大非重复峰值反向功率耗散4000 W
元件数量1
端子数量2
封装主体材料GLASS
封装形状ROUND
封装形式LONG FORM
峰值回流温度(摄氏度)NOT SPECIFIED
极性BIDIRECTIONAL
最大功率耗散1.25 W
认证状态Not Qualified
最大重复峰值反向电压11 V
表面贴装YES
技术AVALANCHE
端子面层MATTE TIN
端子形式WRAP AROUND
端子位置END
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

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MLL14KESD5.0 thru MLL14KESD170A, e3
SURFACE MOUNT TVS
SCOTTSDALE DIVISION
DESCRIPTION
These surface mount Transient Voltage Suppressor (TVS) devices feature
the ability to clamp dangerous high voltage short-term transients such as
produced by direct or radiated electro-static discharge phenomena before
entering sensitive component regions of a circuit design. They are small
economical TVSs targeted primarily for short term transients below a few
microseconds while still achieving significant peak-pulse-power capability
as seen in Figure 1.
APPEARANCE
WWW .
Microsemi
.C
OM
DO-213AB
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
FEATURES
Excellent protection in clamping direct ESD level
transients in excess of 40,000 V per MIL-STD-750,
Method 1020 (approx. 150 ns exponential wave)
Absorbs ESD level transients of 14,000 Watts per MIL-
STD-750, Method 1020 (approximately 150 ns
exponential wave, or one microsecond transients up to
4000 watts. See Figure #1 and #2 for overall transient
Peak Pulse Power.
Clamps Transients in less than 100 picoseconds
Working Stand-off Voltage range of 5V to 170V
Hermetic DO-213AB package. Also available in axial-
leaded DO-41package (see separate data sheet for
14KESD5.0 series)
RoHS Compliant devices available by adding “e3” suffix
APPLICATIONS / BENEFITS
Protects Sensitive circuits from short duration fast
rise time transients such as Electrostatic Discharge
(ESD) or Electrical Fast Transients (EFT)
Minimal capacitance (See Figure #3)
Small surface-mount footprint for high density
mounting
Bidirectional features available by adding a “C” or
“CA” suffix to part number
MAXIMUM RATINGS
4000 Watts for One Microsecond Square Wave or
14,000 watts per ESD Wave form of MIL-STD-750,
method 1020.
See Surge Rating curve in Figures #1 and 2.
Operating and storage temperature –65
o
C to 175
o
C
º
Thermal Resistance: 40 C/W junction to end cap, or
120
º
C/W junction to ambient when mounted on FR4
PC board (1 oz Cu) with recommended footprint (see
last page)
Steady-State Power: 1.50 watts at T
EC
< 115
o
C, or
1.25 watts at T
A
= 25
º
C when mounted on FR4 PC
board and recommended footprint as described for
thermal resistance (also see Figure 1)
Derate at 22.8 W/
o
C above 25
o
C for P
PP
(1μs) and at
o
o
15 mW/ C above 75 C for dc power.
Forward Surge Current 500 amps for 1μs at T
L
=
25
o
C (rise time > 100 ns).
MECHANICAL AND PACKAGING
CASE: Hermetically sealed DO-213AB glass MELF
package
FINISH: End caps are tin-lead or RoHS compliant
matte-Tin plated solderable per MIL-STD-750,
method 2026
POLARITY: Cathode indicated by band.
MARKING: Cathode band only
TAPE & REEL optional: Standard per EIA-481-B
with 12 mm tape, 1500 per 7 inch reel or 5000 per
13 inch reel (add “TR” suffix to part number)
WEIGHT: 0.05 grams
See package dimensions on last page
MLL14KESD5.0 thru
MLL14KESD170A
Copyright
©
2007
8-27-2007 REV D
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1

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