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MBRB1645T4G

产品描述Schottky Barrier Rectifier, 16 A, 45 V, D2PAK 2 LEAD, 800-REEL
产品类别分立半导体    二极管   
文件大小60KB,共5页
制造商Amphenol(安费诺)
官网地址http://www.amphenol.com/
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MBRB1645T4G概述

Schottky Barrier Rectifier, 16 A, 45 V, D2PAK 2 LEAD, 800-REEL

MBRB1645T4G规格参数

参数名称属性值
Brand NameON Semiconductor
是否无铅不含铅
厂商名称Amphenol(安费诺)
零件包装代码TO-263
包装说明R-PSSO-G2
针数3
制造商包装代码418B-04
Reach Compliance Codenot_compliant
ECCN代码EAR99
Factory Lead Time1 week
Is SamacsysN
应用POWER
外壳连接CATHODE
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.57 V
JESD-30 代码R-PSSO-G2
JESD-609代码e3
湿度敏感等级1
最大非重复峰值正向电流150 A
元件数量1
相数1
端子数量2
最高工作温度175 °C
最低工作温度-65 °C
最大输出电流16 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
认证状态Not Qualified
最大重复峰值反向电压45 V
表面贴装YES
技术SCHOTTKY
端子面层Tin (Sn)
端子形式GULL WING
端子位置SINGLE
处于峰值回流温度下的最长时间40
Base Number Matches1

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MBR1635, MBR1645,
MBRB1645, NRVBB1645
Switch Mode
Power Rectifiers
16 A, 35 and 45 V
These state−of−the−art devices use the Schottky Barrier principle
with a platinum barrier metal.
Features
http://onsemi.com
MARKING
DIAGRAMS
TO−220AC
CASE 221B
PLASTIC
Guard−ring for Stress Protection
Low Forward Voltage
175°C Operating Junction Temperature
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
Mechanical Characteristics:
1
3
A
Y
WW
B16x5
x
KA
G
3
4
AYWWG
B16x5
KA
1, 4
Case: Epoxy, Molded
Weight: 1.9 Grams for TO−220
1.7 Grams for
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
MBR1635
MBR1645
MBRB1645
Average Rectified Forward Current Delay
(Rated V
R
, T
C
= 163°C) Total Device
Peak Repetitive Forward Current, Per
Leg
(Rated V
R
, Square Wave,
20 kHz, T
C
= 157°C) Total Device
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
Peak Repetitive Reverse Surge Current
(2.0
ms,
1.0 kHz)
Storage Temperature Range
Operating Junction Temperature (Note 1)
Voltage Rate of Change (Rated V
R
)
Symbol
V
RRM
V
RWM
V
R
Value
Unit
V
1
35
45
45
A
16
I
FRM
32
A
D
2
PAK
= Assembly Location
= Year
= Work Week
= Device Code
= 3 or 4
= Diode Polarity
= Pb−Free Package
4
D
2
PAK
CASE 418B
STYLE 3
B1645G
AYWW
3
1
4
3
B1645
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
I
F(AV)
I
FSM
150
A
ORDERING INFORMATION
Device
Package
TO−220
(Pb−Free)
TO−220
(Pb−Free)
D
2
PAK
(Pb−Free)
D
2
PAK
(Pb−Free)
Shipping
50 Units / Rail
I
RRM
T
stg
T
J
dv/dt
1.0
−65 to +175
−65 to +175
10,000
A
°C
°C
V/ms
MBR1635G
MBR1645G
MBRB1645T4G
NRVBB1645T4G
50 Units / Rail
800 Units / Rail
800 Units / Rail
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dP
D
/dT
J
< 1/R
qJA
.
©
Semiconductor Components Industries, LLC, 2014
1
April, 2014 − Rev. 12
Publication Order Number:
MBR1635/D

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