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M29W640GL7AZS6F

产品描述Flash, 4MX16, 70ns, PBGA64, 11 X 13 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-64
产品类别存储    存储   
文件大小2MB,共90页
制造商Numonyx ( Micron )
官网地址https://www.micron.com
标准
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M29W640GL7AZS6F概述

Flash, 4MX16, 70ns, PBGA64, 11 X 13 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-64

M29W640GL7AZS6F规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Numonyx ( Micron )
零件包装代码BGA
包装说明LBGA, BGA64,8X8,40
针数64
Reach Compliance Codeunknown
ECCN代码3A991.B.1.A
最长访问时间70 ns
其他特性TOP BOOT BLOCK
备用内存宽度8
启动块TOP
命令用户界面YES
通用闪存接口YES
数据轮询YES
JESD-30 代码R-PBGA-B64
长度13 mm
内存密度67108864 bit
内存集成电路类型FLASH
内存宽度16
功能数量1
部门数/规模128
端子数量64
字数4194304 words
字数代码4000000
工作模式ASYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织4MX16
封装主体材料PLASTIC/EPOXY
封装代码LBGA
封装等效代码BGA64,8X8,40
封装形状RECTANGULAR
封装形式GRID ARRAY, LOW PROFILE
页面大小4/8 words
并行/串行PARALLEL
峰值回流温度(摄氏度)NOT SPECIFIED
电源3/3.3 V
编程电压3 V
认证状态Not Qualified
就绪/忙碌YES
座面最大高度1.4 mm
部门规模64K
最大待机电流0.0001 A
最大压摆率0.01 mA
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)2.7 V
标称供电电压 (Vsup)3 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子形式BALL
端子节距1 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间NOT SPECIFIED
切换位YES
类型NOR TYPE
宽度11 mm

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M29W640GH M29W640GL
M29W640GT M29W640GB
64-Mbit (8 Mbit x8 or 4 Mbit x16, uniform block or boot block)
3 V supply flash memory
Feature
Supply voltage
– V
CC
= 2.7 to 3.6 V for program/erase/read
– V
PP
=12 V for fast program (optional)
Asynchronous random/page read
– Page width: 4 words
– Page access: 25 ns
– Random access: 60 ns, 70 ns, 90 ns
Fast program commands
– 2-word/4-byte program (without V
PP
=12 V)
– 4-word/8-byte program (with V
PP
=12 V)
– 16-word/32-byte write buffer
Programming time
– 10
μs
per byte/word typical
– Chip program time: 10 s (4-word program)
Memory organization
– M29W640GH/L:
128 main blocks, 64 Kbytes each
– M29W640GT/B
Eight 8-Kbyte boot blocks (top or bottom)
127 main blocks, 64 Kbytes each
Program/erase controller
– Embedded byte/word program algorithms
Program/erase suspend and resume
– Read from any block during program
suspend
– Read and program another block during
erase suspend
Table 1.
Device summary
Root part number
M29W640GH: uniform, last block protected by V
PP
/WP
M29W640GL: uniform, first block protected by V
PP
/WP
M29W640GT: top boot blocks
M29W640GB: bottom boot blocks
Device code
227Eh + 220Ch + 2201h
227Eh + 220Ch + 2200h
227Eh + 2210h + 2201h
227Eh + 2210h + 2200h
TSOP48 (NA)
12 x 20 mm
FBGA
TSOP56 (NB)
14 x 20 mm(1)
BGA
FBGA
TFBGA48 (ZA)
6 x 8 mm
FBGA64 (ZS)
11 x 13 mm
TBGA64 (ZF)
10 x 13 mm(1)
1. Packages only available upon request.
RoHS compliant packages
128-word extended memory block
Low power consumption:standby and
automatic standby
Unlock Bypass Program command
– Faster production/batch programming
Common flash interface: 64-bit security code
V
PP
/WP pin for fast program and write protect
Temporary block unprotection mode
100,000 program/erase cycles per block
Electronic signature
– Manufacturer code: 0020h
– Device code (see
Table 1)
Automotive Certified Parts Available
October 2009
Rev 11
1/90
www.numonyx.com
1

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