HMC174MS8
/
174MS8E
v04.0109
GaAs MMIC T/R SWITCH
DC - 3 GHz
Typical Applications
The HMC174MS8(E) is ideal for:
• Infrastructure & Repeaters
• Cellular/3G & WiMAX
• Portable Wireless
• LNA Protection
• Automotive Telematics
• Test Equipment
Features
Low Insertion Loss: 0.5 dB
High Input IP3: +60 dBm
Positive Control: 0/+3V to 0 /+8V
High RF power Capability
MSOP - 8 SMT package, 14.8 mm
2
Functional Diagram
General Description
The HMC174MS8 & HMC174MS8E are low-cost
SPDT switches in 8-lead MSOP packages for use in
transmit-receive applications which require very low
distortion at high signal power levels. The device can
control signals from DC to 3 GHz and is especially
suited for cellular/3G and WiMAX applications with
only 0.5 dB loss. The design provides exceptional
intermodulation performance; providing a +60 dBm
third order intercept at 8 Volt bias. RF1 and RF2 are
reflective shorts when “OFF”. On chip circuitry allows
single positive supply operation at very low DC current
with control inputs compatible with CMOS and most
TTL logic families.
11
SWITCHES - SPDT T/R - SMT
Electrical Specifi cations, T
A
= +25° C, Vdd = +5 Vdc, 50 Ohm System
Parameter
Frequency
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.0 GHz
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.0 GHz
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.0 GHz
0/8V Control
0/8V Control
0.5 - 1.0 GHz
0.5 - 3.0 GHz
0.5 - 1.0 GHz
0.5 - 3.0 GHz
DC - 3.0 GHz
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
10
24
ns
ns
32
32
55
49
21
21
18
15
Min.
Typ.
0.4
0.5
0.8
1.3
26
26
23
20
25
20
15
12
36
36
60
56
Max.
0.7
0.8
1.1
1.8
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
Insertion Loss
Isolation
Return Loss
Input Power for 1 dB Compression
Input Third Order Intercept
Switching Characteristics
11 - 2
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC174MS8 / 174MS8E
v04.0109
GaAs MMIC T/R SWITCH
DC - 3 GHz
Insertion Loss
0
Isolation Between RFC & RF1/RF2
0
-5
INSERTION LOSS (dB)
-0.5
ISOLATION (dB)
-10
-15
-20
-25
-30
-35
+25C
+85C
-40C
-1
-1.5
+25C
+85C
-40C
-2
0
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
-40
0
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
RF1 to RF2 Isolation
0
-5
Return Loss
0
-5
RETURN LOSS (dB)
11
SWITCHES - SPDT T/R - SMT
11 - 3
-10
ISOLATION (dB)
-15
-20
-25
-30
-35
-40
0
0.5
1
1.5
RF1 ON
RF2 ON
-10
-15
-20
-25
-30
-35
-40
+25C
+85C
-40C
2
2.5
3
3.5
4
0
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
FREQUENCY (GHz)
Input P0.1dB vs. Vdd
45
Input P1dB vs. Vdd
45
40
P0.1dB (dBm)
P1dB (dBm)
40
35
35
30
30
3V
5V
8V
25
3V
5V
8V
25
20
0
0.5
1
1.5
2
2.5
3
FREQUENCY (GHz)
20
0
0.5
1
1.5
2
2.5
3
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC174MS8 / 174MS8E
v04.0109
GaAs MMIC T/R SWITCH
DC - 3 GHz
Input P0.1dB vs. Temperature
45
Input P1dB vs. Temperature
45
40
P0.1dB (dBm)
P1dB (dBm)
+25C
+85C
-40C
40
35
35
30
30
+25C
+85C
-40C
25
25
20
0
0.5
1
1.5
2
2.5
3
FREQUENCY (GHz)
20
0
0.5
1
1.5
2
2.5
3
FREQUENCY (GHz)
11
SWITCHES - SPDT T/R - SMT
Input Third Order Intercept
70
60
50
IP3 (dBm)
40
30
20
10
0
0
0.5
1
1.5
2
2.5
3
FREQUENCY (GHz)
3v
5v
8v
2nd & 3rd Harmonics @ 900 MHz
80
70
HARMONICS (dBc)
60
50
40
30
20
10
0
3
4
5
6
7
8
Vdd (VOLTS)
2Fo
3Fo
2nd & 3rd Harmonics @ 1900 MHz
80
70
HARMONICS (dBc)
60
50
40
30
20
10
0
3
4
5
6
7
8
Vdd (VOLTS)
2Fo
3Fo
Absolute Maximum Ratings
Bias Voltage Range (Vdd)
Control Voltage Range (A & B)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
-0.2 to +10 Vdc
-0.2 to +Vdd Vdc
-65 to +150 °C
-40 to +85 °C
Class 1A
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
11 - 4
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC174MS8 / 174MS8E
v04.0109
GaAs MMIC T/R SWITCH
DC - 3 GHz
Truth Table
*Control Input Voltage Tolerances are ± 0.2 Vdc
Bias
Vdd
(Vdc)
3
3
3
5
5
5
10
10
10
5
5
Control Input*
A
(Vdc)
0
0
Vdd
0
0
Vdd
0
0
Vdd
-Vdd
Vdd
B
(Vdc)
0
Vdd
0
0
Vdd
0
0
Vdd
0
Vdd
-Vdd
Bias Current
Idd
(uA)
30
25
25
110
115
115
380
495
495
600
600
Control Current
Ia
(uA)
-15
-25
0
-55
-100
-15
-190
-275
-220
-600
225
Ib
(uA)
-15
0
-25
-55
-15
-100
-190
-220
-275
225
-600
Signal Path State
RF to RF1
OFF
ON
OFF
OFF
ON
OFF
OFF
ON
OFF
ON
OFF
RF to RF2
OFF
OFF
ON
OFF
OFF
ON
OFF
OFF
ON
OFF
ON
Outline Drawing
11
SWITCHES - SPDT T/R - SMT
11 - 5
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS].
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Package Information
Part Number
HMC174MS8
HMC174MS8E
Package Body Material
Low Stress Injection Molded Plastic
RoHS-compliant Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
100% matte Sn
MSL Rating
MSL1
MSL1
[1]
Package Marking
[3]
H174
XXXX
H174
XXXX
[2]
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC174MS8 / 174MS8E
v04.0109
GaAs MMIC T/R SWITCH
DC - 3 GHz
Pin Descriptions
Pin Number
1
2
Function
A
B
Description
See truth table and control voltage table.
See truth table and control voltage table.
This pin is DC coupled and matched to 50 Ohm.
Blocking capacitors are required.
Supply Voltage.
Interface Schematic
3, 5, 8
RFC, RF1, RF2
4
Vdd
6, 7
GND
This pin must be connected to RF/DC ground.
Typical Application Circuit
11
SWITCHES - SPDT T/R - SMT
Notes:
1. Set logic gate and switch Vdd = +3V to +5V and use HCT series logic to provide a TTL driver interface.
2. Control inputs A/B can be driven directly with CMOS logic (HC) with Vdd of 3 to 8 Volts applied to the CMOS logic gates and to
pin 4 of the RF switch.
3. DC Blocking capacitors are required for each RF port as shown. Capacitor value determines lowest frequency of operation.
4. Highest RF signal power capability is achieved with V set to +8V. The switch will operate properly (but at lower RF power
capability) at bias voltages down to +3V.
11 - 6
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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