CS220-8B
CS220-8D
CS220-8M
CS220-8N
SILICON CONTROLLED RECTIFIERS
8.0 AMP, 200 THRU 800 VOLT
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CS220-8B series
types are epoxy molded SCRs designed for sensing
circuit and control system applications.
MARKING: FULL PART NUMBER
TO-220 CASE
MAXIMUM RATINGS:
(TC=25°C unless otherwise noted)
SYMBOL
Peak Repetitive Off-State Voltage
VDRM, VRRM
RMS On-State Current (TC=90°C)
IT(RMS)
Peak One Cycle Surge Current, t=10ms
I
2
t Value for Fusing, t=10ms
Peak Gate Power Dissipation, tp=10μs
Average Gate Power Dissipation
Peak Forward Gate Current, tp=10μs
Peak Forward Gate Voltage, tp=10μs
Peak Reverse Gate Voltage, tp=10μs
Critical Rate of Rise of On-State Current
Operating Junction Temperature
Storage Temperature
Thermal Resistance
Thermal Resistance
ELECTRICAL
SYMBOL
IDRM, IRRM
IDRM, IRRM
IGT
IH
VGT
VTM
dv/dt
ITSM
I
2
t
PGM
PG(AV)
IFGM
VFGM
VRGM
di/dt
TJ
Tstg
Θ
JA
Θ
JC
CS220
-8D
-8M
400
600
8.0
60
18
40
1.0
4.0
16
5.0
50
-40 to +125
-40 to +150
60
2.5
-8B
200
-8N
800
UNITS
V
A
A
A
2
s
W
W
A
V
V
A/μs
°C
°C
°C/W
°C/W
CHARACTERISTICS:
(TC=25°C unless otherwise noted)
TEST CONDITIONS
MIN
TYP
Rated VDRM, VRRM
Rated VDRM, VRRM, TC=125°C
VD=12V, RL=10Ω
IT=100mA
VD=12V, RL=10Ω
ITM=16A, tp=380μs
VD=⅔Rated VDRM, TC=125°C
200
3.0
7.3
0.9
1.3
MAX
10
2.0
15
20
1.5
1.8
UNITS
μA
mA
mA
mA
V
V
V/μs
R4 (24-October 2013)
CS220-8B
CS220-8D
CS220-8M
CS220-8N
SILICON CONTROLLED RECTIFIERS
8.0 AMP, 200 THRU 800 VOLT
TO-220 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Cathode
2) Anode
3) Gate
Tab is common to pin 2
MARKING:
FULL PART NUMBER
R4 (24-October 2013)
w w w. c e n t r a l s e m i . c o m
CS220-8B
CS220-8D
CS220-8M
CS220-8N
SILICON CONTROLLED RECTIFIERS
8.0 AMP, 200 THRU 800 VOLT
TYPICAL ELECTRICAL CHARACTERISTICS
R4 (24-October 2013)
w w w. c e n t r a l s e m i . c o m
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