DISCRETE SEMICONDUCTORS
DATA SHEET
BF545A; BF545B; BF545C
N-channel silicon junction
field-effect transistors
Product specification
Supersedes data of April 1995
File under Discrete Semiconductors, SC07
1996 Jul 29
Philips Semiconductors
Product specification
N-channel silicon junction
field-effect transistors
FEATURES
•
Low leakage level (typ. 500 fA)
•
High gain
•
Low cut-off voltage (max. 2.2 V for BF545A).
APPLICATIONS
•
Impedance converters in e.g. electret microphones and
infra-red detectors
•
VHF amplifiers in oscillators and mixers.
DESCRIPTION
N-channel symmetrical silicon junction field-effect
transistors in a SOT23 package.
PINNING - SOT23
PIN
1
2
3
SYMBOL
s
d
g
DESCRIPTION
source
drain
gate
handbook, halfpage
2
BF545A; BF545B; BF545C
1
g
d
s
3
Top view
MAM036
Marking codes:
BF545A: M65.
BF545B: M66.
BF545C: M67.
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
V
DS
V
GSoff
I
DSS
PARAMETER
drain-source voltage
gate-source cut-off voltage
drain current
BF545A
BF545B
BF545C
P
tot
y
fs
total power dissipation
forward transfer admittance
up to T
amb
= 25
°C
V
GS
= 0; V
DS
= 15 V
I
D
= 1
µA;
V
DS
= 15 V
V
GS
= 0; V
DS
= 15 V
2
6
12
−
3
6.5
15
25
250
6.5
mA
mA
mA
mW
mS
CONDITIONS
−
−0.4
MIN.
MAX.
±30
−7.8
UNIT
V
V
1996 Jul 29
2
Philips Semiconductors
Product specification
N-channel silicon junction
field-effect transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
DS
V
GSO
V
GDO
I
G
P
tot
T
stg
T
j
Note
PARAMETER
drain-source voltage
gate-source voltage
gate-drain voltage (DC)
forward gate current (DC)
total power dissipation
storage temperature
operating junction temperature
up to T
amb
= 25
°C;
note 1
open drain
open source
CONDITIONS
BF545A; BF545B; BF545C
MIN.
−
−
−
−
−
−65
−
MAX.
±30
−30
−30
10
250
150
150
V
V
V
UNIT
mA
mW
°C
°C
1. Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain
lead 10 mm
2
.
handbook, halfpage
400
MBB688
Ptot
(mW)
300
200
100
0
0
50
100
150
200
Tamb (°C)
Fig.2 Power derating curve.
1996 Jul 29
3
Philips Semiconductors
Product specification
N-channel silicon junction
field-effect transistors
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
PARAMETER
thermal resistance from junction to ambient; note 1
BF545A; BF545B; BF545C
VALUE
500
UNIT
K/W
1. Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain
lead 10 mm
2
.
STATIC CHARACTERISTICS
T
j
= 25
°C;
unless otherwise specified.
SYMBOL
V
(BR)GSS
V
GSoff
PARAMETER
gate-source cut-off voltage
BF545A
BF545B
BF545C
I
D
= 1
µA;
V
DS
= 15 V
I
DSS
drain current
BF545A
BF545B
BF545C
I
GSS
gate leakage current
V
GS
=
−20
V; V
DS
= 0
V
GS
=
−20
V; V
DS
= 0;
T
j
= 125
°C
y
fs
y
os
forward transfer admittance
common source output
admittance
V
GS
= 0; V
DS
= 15 V
V
GS
= 0; V
DS
= 15 V
V
GS
= 0; V
DS
= 15 V
2
6
12
−
−
3
−
−
−
−
−0.5
−
−
40
6.5
15
25
−1000
−100
6.5
−
mA
mA
mA
pA
nA
mS
µS
CONDITIONS
I
D
= 200
µA;
V
DS
= 15 V
−0.4
−1.6
−3.2
−0.4
−
−
−
−
−2.2
−3.8
−7.8
−7.5
V
V
V
V
MIN.
−30
−
TYP.
−
MAX.
V
UNIT
gate-source breakdown voltage I
G
=
−1 µA;
V
DS
= 0
1996 Jul 29
4
Philips Semiconductors
Product specification
N-channel silicon junction
field-effect transistors
DYNAMIC CHARACTERISTICS
T
amb
= 25
°C;
unless otherwise specified.
SYMBOL
C
is
C
rs
g
is
g
fs
g
rs
g
os
PARAMETER
input capacitance
reverse transfer capacitance
BF545A; BF545B; BF545C
CONDITIONS
V
DS
= 15 V; V
GS
=
−10
V; f = 1 MHz
V
DS
= 15 V; V
GS
= 0; f = 1 MHz
V
DS
= 15 V; V
GS
=
−10
V; f = 1 MHz
V
DS
= 15 V; V
GS
= 0; f = 1 MHz
3
TYP.
1.7
0.8
0.9
15
300
2
1.8
−6
−40
30
60
UNIT
pF
pF
pF
pF
µS
µS
mS
mS
µS
µS
µS
µS
common source input conductance V
DS
= 10 V; I
D
= 1 mA; f = 100 MHz
V
DS
= 10 V; I
D
= 1 mA; f = 450 MHz
common source transfer
conductance
common source reverse
conductance
common source output
conductance
V
DS
= 10 V; I
D
= 1 mA; f = 100 MHz
V
DS
= 10 V; I
D
= 1 mA; f = 450 MHz
V
DS
= 10 V; I
D
= 1 mA; f = 100 MHz
V
DS
= 10 V; I
D
= 1 mA; f = 450 MHz
V
DS
= 10 V; I
D
= 1 mA; f = 100 MHz
V
DS
= 10 V; I
D
= 1 mA; f = 450 MHz
handbook, halfpage
30
MBB467
handbook, halfpage
6
MBB466
IDSS
(mA)
20
Yfs
(mS)
5
10
0
0
−2
−4
−6
−8
VGSoff (V)
4
0
−2
−4
−6
−8
VGSoff (V)
V
DS
= 15 V; V
GS
= 0; T
j
= 25
°C.
V
DS
= 15 V; T
j
= 25
°C.
Fig.4
Fig.3
Drain current as a function of gate-source
cut-off voltage; typical values.
Forward transfer admittance as a
function of gate-source cut-off voltage;
typical values.
1996 Jul 29
5
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